VRF141(G)
VRF141MP(G)
28V, 150W, 175MHz
The VRF141 is a gold-metallized silicon n-channel RF power transistor de-
signed for broadband commercial and military applications requiring high power
and gain without compromising reliability, ruggedness, or inter-modulation
distortion.
FEATURES
• Improved Ruggedness V(BR)DSS = 80 V
• 150W with 22dB Typical Gain @ 30MHz, 28V
• 150W with 13dB Typical Gain @ 175MHz, 28V
• Excellent Stability & Low IMD
• Common Source Confi guration
• Available in Matched Pairs
• 30:1 Load VSWR Capability at Specifi ed Operating Conditions
• Nitride Passivated
• Refractory Gold Metallization
• High Voltage Replacement for MRF141
• RoHS Compliant
Symbol Parameter VRF141(MP) Unit
VDSS Drain-Source Voltage 80 V
IDContinuous Drain Current @ TC = 25°C 20 A
VGS Gate-Source Voltage ±40 V
PDTotal Device dissipation @ TC = 25°C 300 W
TSTG Storage Temperature Range -65 to 150 °C
TJOperating Junction Temperature 200
RF POWER VERTICAL MOSFET
Maximum Ratings All Ratings: TC =25°C unless otherwise specifi ed
Static Electrical Characteristics
Symbol Parameter Min Typ Max Unit
V(BR)DSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA) 80 V
VDS(ON) On State Drain Voltage (ID(ON) = 10A, VGS = 10V) 0.9 1.0
IDSS Zero Gate Voltage Drain Current (VDS = 60V, VGS = 0V) 1.0 mA
IGSS Gate-Source Leakage Current (VDS = ±20V, VDS = 0V) 1.0 A
gfs Forward Transconductance (VDS = 10V, ID = 5A) 5.0 mhos
VGS(TH) Gate Threshold Voltage (VDS = 10V, ID = 100mA) 2.9 3.6 4.4 V
Microsemi Website - http://www.microsemi.com
Dynamic Characteristics
Symbol Parameter Test Conditions Min Typ Max Unit
CISS Input Capacitance VGS = 0V 400
pF
Coss Output Capacitance VDS = 28V 375
Crss Reverse Transfer Capacitance f = 1MHz 50
050-4942 Rev D 9-2010
Thermal Characteristics
Symbol Characteristic Min Typ Max Unit
RJC Junction to Case Thermal Resistance 0.60 °C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Class A Characteristics
Symbol Test Conditions Min Typ Max Unit
GPS f1 = 30MHz, f2 = 30.001MHz ,VDD = 28V, IDQ = 4.0A, Pout = 50WPEP 23
dB
IMD(d3) f1 = 30MHz, f2 = 30.001MHz ,VDD = 28V, IDQ = 4.0A, Pout = 50WPEP -50
IMD(d9-d13) f1 = 30MHz, f2 = 30.001MHz ,VDD = 28V, IDQ = 4.0A, Pout = 50WPEP -75
Functional Characteristics VRF141(MP)(G)
Symbol Parameter Min Typ Max Unit
GPS f 1= 30MHz, f2 = 30.001MHz, VDD = 28V, IDQ = 250mA, Pout = 150WPEP 16 20 dB
GPS f1 = 175MHz, VDD = 28V, IDQ = 250mA, Pout = 150W 13
f1 = 30MHz, f2 = 30.001MHz ,VDD = 28V, IDQ = 250mA, Pout = 150WPEP 40 45 %
IMD(d3) f1 = 30MHz, f2 = 30.001MHz, VDD = 28V, IDQ = 250mA, Pout = 150WPEP
1-30 -28 dB
IMD(d11) f1 = 30MHz, f2 = 30.001MHz, VDD = 28V, IDQ = 250mA, Pout = 150WPEP -60
f1 = 30MHz, f2 = 30.001MHz, VDD = 28V, IDQ = 250mA, Pout = 150WPEP
30:1 VSWR - All Phase Angles No Degradation in Output Power
1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone
Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.
050-4942 Rev D 9-2010
1
10
100
110100
0
5
10
15
20
25
30
35
40
0 2 4 6 8 10 12
0
10
20
30
40
50
60
0 5 10 15 20 25
1
10
100
0 10 20 30 40 50 60
Ciss
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 1, Output Characteristics
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
TJ= 125°C
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 3, Capacitance vs Drain-to-Source Voltage
C, CAPACITANCE (pF)
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 4, Forward Safe Operating Area
ID, DRAIN CURRENT (V)
4V
5V
6V
7V
8V
9V
10V
13V
VGS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 2, Transfer Characteristics
250s PULSE
TEST<0.5 % DUTY
CYCLE
TJ= -55°C
TJ= 25°C
Coss
Crss
Rds(on)
TJ = 125°C
TC = 75°C
Typical Performance Curves
Pdmax
IDMax
VRF141(MP)(G)
050-4942 Rev D 9-2010
50
45
40
35
30
25
20
0 25 50 75 100 125 150 175 200 225
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
10-5 10-4 10-3 10-2 10 1.0
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
D = 0.9
Peak T
J
= P
DM
x Z
θJC + TC
Duty Factor D = t1/t2
t2
t1
P
DM
Note:
t1 = Pulse Duration
ZJC, THERMAL IMPEDANCE (°C/W)
RECTANGULAR PULSE DURATION (seconds)
Figure 5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
0
50
100
150
200
250
0 1 2 3 4
P
out, OUTPUT POWER (WATTS PEP)
Figure 6. IMD versus POUT
IMD, INTERMODULATION DISTORTION (dB)
OUTPUT POWER (WPEP)
P
out, INPUT POWER (WATTS PEP)
Figure 7. PIN versus POUT
Typical Performance Curves
Vdd=28V, Idq = 250mA,
Freq=150MHz
Vdd=28V, Idq = 250mA,
Freq=30MHz
IM3
IM5
0
50
100
150
200
250
0 5 10 15 20 25
OUTPUT POWER (WPEP)
P
out, INPUT POWER (WATTS PEP)
Figure 7. PIN versus POUT
Vdd=28V, Idq = 250mA,
Freq=175MHz
VRF141(MP)(G)
175 MHz test Circuit
30 MHz test Circuit
050-4942 Rev D 9-2010
VRF141(MP)(G)
050-4942 Rev D 9-2010
A
U
M
M
Q
RB
1
4
32
D
K
ESeating Plane
C
J
H
PIN 1 - SOURCE
PIN 2 - GATE
PIN 3 - SOURCE
PIN 4 - DRAIN
M174 Package Outline .5” SOE
All Dimensions to be ±.005”
DIM INCHES MILLIMETERS
MIN MAX MIN MAX
A 0.096 0.990 24.39 25.14
B0.465 0.510 11.82 12.95
C0.229 0.275 5.82 6.98
D0.216 0.235 5.49 5.96
E0.084 0.110 2.14 2.79
H0.144 0.178 3.66 4.52
J0.003 0.007 0.08 0.17
K0.435 11.0
M 45° NOM 45° NOM
Q0.115 0.130 2.93 3.30
R 0.246 0.255 6.25 6.47
U0.720 0.730 18.29 18.54
Adding MP at the end of P/N specifi es a matched pair where VGS(TH) is matched between the two parts. VTH values
are marked on the devices per the following table.
Code Vth Range Code 2 Vth Range
A 2.900 - 2.975 M 3.650 - 3.725
B 2.975 - 3.050 N 3.725 - 3.800
C 3.050 - 3.125 P 3.800 - 3.875
D 3.125 - 3.200 R 3.875 - 3.950
E 3.200 - 3.275 S 3.950 - 4.025
F3.275 - 3.350 T 4.025 - 4.100
G3.350 - 3.425 W 4.100 - 4.175
H 3.425 - 3.500 X4.175 - 4.250
J 3.500 - 3.575 Y 4.250 - 4.325
K 3.575 - 3.650 Z4.325 - 4.400
VTH values are based on Microsemi measurements at datasheet conditions with an accuracy of 1.0%.
