BC546,BC547,BC548 SERIES NPN GENERAL PURPOSE TRANSISTOR VOLTAGE 30V/45V/65V 625 mWatts POWER FEATURES * NPN epitaxial silicon, planar design * Collector current I C = 100mA * Complimentary (PNP) device:BC556,BC557,BC558 Series * Pb free product :99% Sn above can meet RoHS environment substance directive request MECHANICAL DATA * Case: TO-92 * Terminals: Solderable per MIL-STD-202, Method 208 * Approx Weight : 0.02grams * Device Marking : BC546A=546A BC546B=546B - BC547A=547A BC547B=547B BC547C=547C BC548A=548A BC548B=548B BC548C=548C ABSOLUTE MAXIMUM RATINGS PA RA ME TE R S ymbol Value Uni ts C ollector - E mi tter Voltage B C 546 B C 547 B C 548 VC E O 65 45 30 V C ollector - B ase Voltage B C 546 B C 547 B C 548 VC B O 80 50 30 V E mi tter - B ase Voltage B C 546 B C 547 B C 548 VE B O 6.0 6.0 5.0 V 100 mA mW C ollector C urrent - C onti nuous I C Max P ower D i ssi pati on P TOT 625 S torage Temperature TSTG -55 to 150 O -55 to 150 O Juncti on Temperature TJ C C THERMAL CHARACTERISTICS PARAMETER Thermal Resi stance, Juncti on to Ambi ent STAD-DEC.02.2005 Symbol Value RJA 200 Uni ts O C /W PAGE . 1 BC546,BC547,BC548 SERIES ELECTRICAL CHARACTERISTICS (TJ=25OC, unless otherwise noted) PA RA M E TE R S ym b o l M IN . T YP. MA X . U ni t s C o lle c to r - E mi tte r B re a k d o wn Vo lta g e ( IC = 1 0 m A , IB = 0 ) B C 5 4 6 A ,B B C 5 4 7 A ,B ,C B C 5 4 8 A ,B ,C V (B R)C E O 65 45 30 - - V C o lle c to r - B a s e B re a k d o wn Vo lta g e ( IC = 1 0 u A , IE = 0 ) B C 5 4 6 A ,B B C 5 4 7 A ,B ,C B C 5 4 8 A ,B ,C V (B R)C B O 80 50 30 - - V E mi tte r - B a s e B re a k d o wn Vo lta g e ( IE = 1 0 u A , IC = 0 ) B C 5 4 6 A ,B B C 5 4 7 A ,B ,C B C 5 4 8 A ,B ,C V (B R)E B O 6 .0 6 .0 5 .0 - - V IE B O - - 100 nA IC B O - - 15 5 .0 nA uA - 90 150 270 - 11 0 200 420 180 290 520 220 450 800 E m i t t e r - B a s e C ut o f f C ur r e nt ( V EB= 5 V ) C o l l e c t o r - B a s e C u t o f f C u r r e n t ( V C B = 3 0 V , IE = 0 ) D C C ur r e nt G a i n ( IC = 1 0 u A , V C E = 5 V ) T J= 1 5 0 OC B C 5 4 6 A ,B B C 5 4 7 A ,B ,C B C 5 4 8 A ,B ,C - hFE ( IC = 2 . 0 m A , V C E = 5 V ) B C 5 4 6 A ,B B C 5 4 7 A ,B ,C B C 5 4 8 A ,B ,C C o l l e c t o r - E m i t t e r S a t ur a t i o n Vo l t a g e ( IC = 1 0 m A , IB = 0 . 5 m A ) ( IC = 1 0 0 m A , IB = 5 . 0 m A ) V C E ( S AT) - - 0 .2 5 0 .6 V B a s e - E m i t t e r S a t ur a t i o n Vo l t a g e ( IC = 1 0 m A , IB = 0 . 5 m A ) ( IC = 1 0 0 m A , IB = 5 . 0 m A ) V B E ( S AT) - 0 .7 0 .9 - V B a s e - E mi tte r Vo lta g e ( IC = 2 m A , V C E = 0 . 5 m A ) ( IC = 1 0 m A , V C E = 5 . 0 m A ) V B E ( S AT) 0 .5 8 - 0 .6 6 0 - 0 .7 0 0 .7 7 V C o l l e c t o r - B a s e C a p a c i t a nc e ( V C B = 1 0 V , IE = 0 , f = 1 M H Z ) C CBO - - 4 .5 pF LEGAL STATEMENT Copyright PanJit International, Inc 2005 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-DEC.02.2005 PAGE . 2 BC546,BC547,BC548 SERIES ELECTRICAL CHARACTERISTICS CURVE BC546A,BC547A,BC548A ONLY 300 TJ =150 C V CB=30V 250 TJ =100 C 200 10 hFE ICB0, Collector Current (nA) 100 150 TJ =25 C 100 1 V CE=5V 50 0 0.01 0 25 50 75 100 125 150 0.1 1 10 100 1000 Collector Current, IC (mA) Junction Temperature, TJ (OC) Fig. 1. Typical ICB0 vs. Fig. 2. 1200 Typical hFE vs. 1000 1000 TJ = 25 C TJ = 100 C TJ = 100 C V CE(sat), (mV) VBE(ON), (mV) 800 600 100 400 TJ = 150 C TJ = 25 C VCE=5V 200 0 0.01 IC/IB=20 TJ = 150 C 0.1 1 10 100 10 0.01 1000 Collector Current, IC (mA) Fig. 3. 0.1 1 Fig. 4. Typical VBE(ON) vs. 1200 Capacitance, C (pF) VBE(sat), (mV) TJ = 100 C 400 Cob (CB) IC/IB=20 TJ = 150 C 1 0.1 1 10 100 0.1 1 Collector Current, IC (mA) Fig. 5. STAD-DEC.02.2005 Typical VCE(SAT) vs. TJ = 25 C 600 0 0.01 1000 Cib (EB) TJ = 25 C 200 100 10 1000 800 10 Collector Current, IC (mA) Typical VBE(SAT) vs. 10 100 Reverse Voltage (V) Fig. 6. Typical Capacitances vs. PAGE . 3 BC546,BC547,BC548 SERIES ELECTRICAL CHARACTERISTICS CURVE BC546B,BC547B,BC548B ONLY 500 100 TJ =150 C VCE=5V 400 350 TJ =100 C 10 300 hFE ICB0, Collector Current (nA) 450 VCB=30V TJ =25 C 250 200 1 150 100 50 0 25 50 75 100 125 0 0.01 150 0.1 1 Junction Temperature, TJ ( C) Fig. 1. 10 100 1000 Collector Current, IC (mA) O Typical ICB0 vs. Junction Temperature Fig. 2. Typical hFE vs. Collector Current 1000 1200 1000 TJ = 25 C TJ = 100 C TJ = 100 C VCE(sat), (mV) VBE(ON), (mV) 800 600 TJ = 150 C 100 400 TJ = 25 C 200 VCE=5V TJ = 150 C 0 0.01 0.1 1 10 100 IC/IB=20 10 0.01 1000 Collector Current, IC (mA) Fig. 3. 0.1 1 Typical VBE(ON) vs. Collector Current 1000 10 1000 Cib (EB) 800 TJ = 100 C 600 400 200 1 0.1 1 10 100 0.1 Collector Current, IC (mA) Typical VBE(SAT) vs. Collector Current STAD-DEC.02.2005 Cob (CB) IC/IB=20 TJ = 150 C 0 0.01 TJ = 25 C Capacitance, C (pF) TJ = 25 C VBE(sat), (mV) 100 Typical VCE(SAT) vs. Collector Current Fig. 4. 1200 Fig. 5. 10 Collector Current, IC (mA) 1 10 100 Reverse Voltage (V) Fig. 6. Typical Capacitances vs. Reverse Voltage PAGE . 4 BC546,BC547,BC548 SERIES ELECTRICAL CHARACTERISTICS CURVE BC547C,BC548C ONLY 1200 100 VCE=5V ICB0, Collector Current (nA) VCB=30V TJ=150 C 1000 hFE 10 800 TJ=100 C 600 TJ =25 C 400 1 200 0 0.01 0 25 50 75 100 125 150 0.1 1 10 100 1000 Collector Current, IC, (mA) Junction Temperature, TJ (OC) Fig. 1. Fig. 2. Typical ICB0 vs. Junction Typical hFE vs. Collector 1000 1200 1000 TJ = 25 C TJ = 100 C VCE(sat), (mV) VBE(ON), (mV) 800 600 TJ = 100 C TJ = 150 C 100 400 TJ = 25 C IC/IB=20 200 VCE=5V TJ = 150 C 0 0.01 0.1 1 10 100 10 0.01 1000 0.1 Fig. 3. 1 10 100 Typical VBE(ON) vs. Collector Current Fig. 4. 1200 Typical VCE(SAT) vs. Collector 10 1000 TJ = 25 C Cib (EB) TJ = 25 C Capacitance, C (pF) VBE(sat), (mV) 800 1000 Collector Current, IC (mA) Collector Current, IC (mA) TJ = 100 C 600 400 Cob (CB) IC/IB=20 200 TJ = 150 C 0 0.01 1 0.1 1 10 100 0.1 STAD-DEC.02.2005 Typical VBE(SAT) vs. Collector 10 100 Reverse Voltage (V) Collector Current, IC (mA) Fig. 5. 1 Fig. 6. Typical Capacitances vs. Reverse PAGE . 5