PAGE . 1
STAD-DEC.02.2005
BC546,BC547,BC548 SERIES
NPN GENERAL PURPOSE TRANSISTOR
VOLTAGE 30V/45V/65V 625 mWatts
FEATURES
• NPN epitaxial silicon, planar design
• Collector current IC = 100mA
• Complimentary (PNP) device:BC556,BC557,BC558 Series
• Pb free product :99% Sn above can meet RoHS
environment substance directive request
MECHANICAL DA T A
• Case: TO-92
• Termin als: Soldera ble per MIL-STD-202, Method 208
• Approx Weight : 0.02grams
• Device Marking :
POWER
ABSOLUTE MAXIMUM RATINGS
THERMAL CHARACTERISTICS
A645=A645CBB645=B645CB-
A745=A745CBB745=B745CBC745=C745CB
A845=A845CBB845=B845CBC845=C845CB
RETEMARAPlobmySeulaVstinU
egatloVrettimE-rotcelloC
645CB
745CB
845CB
V
OEC
56
54
03
V
egatloVesaB-rotcelloC
645CB
745CB
845CB
V
OBC
08
05
03
V
egatloVesaB-rettimE
645CB
745CB
845CB
V
OBE
0.6
0.6
0.5
V
suounitnoC-tnerruCrotcelloCI
C
001Am
noitapissiDrewoPxaMP
TOT
526Wm
erutarepmeTegarotST
GTS
051ot55-
O
C
erutarepmeTnoitcnuJT
J
051ot55-
O
C
RETEMARAPlobmySeulaVstinU
tneibmAotnoitcnuJ,ecnatsiseRlamrehT R
θAJ
002
O
W/C
PAGE . 2
STAD-DEC.02.2005
BC546,BC547,BC548 SERIES
ELECTRICAL CHARACTERISTICS (TJ=25OC, unless otherwise noted)
RETEMARAPlobmyS.NIM.PYT.XAMstinU
egatloVnwodkaerBrettimE-rotcelloC
I(
C
I,Am01=
B
)0=
B,A645CB
C,B,A745CB
C,B,A845CB
V
)RB(
OEC
56
54
03
--V
egatloVnwodkaerBesaB-rotcelloC
I(
C
I,Au01=
E
)0=
B,A645CB
C,B,A745CB
C,B,A845CB
V
)RB(
OBC
08
05
03
--V
egatloVnwodkaerBesaB-rettimE
I(
E
I,Au01=
C
)0=
B,A645CB
C,B,A745CB
C,B,A845CB
V
)RB(
OBE
0.6
0.6
0.5
--V
V(tnerruCffotuCesaB-rettimE
BE
)V5=I
OBE
-- 001An
V(tnerruCffotuCesaB-rotcelloC
BC
I,V03=
E
)0= T
J
051=
O
CI
OBC
-
-
-
-
51
0.5
An
Au
niaGtnerruCCD
I(
C
V,Au01=
EC
)V5=
I(
C
V,Am0.2=
EC
)V5=
B,A645CB
C,B,A745CB
C,B,A845CB
B,A645CB
C,B,A745CB
C,B,A845CB
h
EF
-
-
-
011
002
024
09
051
072
081
092
025
-
-
-
022
054
008
-
egatloVnoitarutaSrettimE-rotcelloC I(
C
I,Am01=
B
)Am5.0=
I(
C
I,Am001=
B
)Am0.5= V
)TAS(EC
-
-
-
-
52.0
6.0 V
egatloVnoitarutaSrettimE-esaB I(
C
I,Am01=
B
)Am5.0=
I(
C
I,Am001=
B
)Am0.5= V
)TAS(EB
-
-
7.0
9.0
-
-V
egatloVrettimE-esaB I(
C
Am2=
,
V
EC
)Am5.0=
I(
C
V,Am01=
EC
)Am0.5= V
)TAS(EB
85.0
-
066.0
-
07.0
77.0 V
ecnaticapaCesaB-rotcelloCV(
BC
I,V01=
E
HM1=f,0=
Z
)C
OBC
-- 5.4Fp
LEGAL ST ATEMENT
Copyright PanJit International, Inc 2005
The information presented in this document is believed to be accurate and reliable. The specifications and information
herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the
suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or
systems. Pan Jit does not convey any license under its patent rights or rights of others.
PAGE . 3
STAD-DEC.02.2005
BC546,BC547,BC548 SERIES
ELECTRICAL CHARACTERISTICS CURVE BC546A,BC547A,BC548A ONLY
0
1
10
100
25 50 75 100 125 150
Junction Temperature, T
J
(
O
C)
I
CB0
, Collector Current (nA
)
V
CB
=30V
0
50
100
150
200
250
300
0.01 0.1 1 10 100 1000
Collector Current, I
C
(mA)
hFE
T
J
=25 C
T
J
=100˚ C
T
J
=150˚ C
V
CE
=5V
0
200
400
600
800
1000
1200
0.01 0.1 1 10 100 1000
Collector Current, IC (mA)
V
BE(ON)
, (mV)
TJ = 25 ˚C
TJ = 150 ˚C
TJ = 100 ˚C
VCE=5V
10
100
1000
0.01 0.1 1 10 100 1000
Collector Current, I
C
(mA)
V
CE(sat)
, (mV)
T
J
= 25 ˚C
T
J
= 150 ˚C
T
J
= 100 ˚C
I
C
/I
B
=20
0
200
400
600
800
1000
1200
0.01 0.1 1 10 100
Collector Current, I
C
(mA)
V
BE(sat)
, (mV)
T
J
= 25 ˚C
T
J
= 150 ˚C
T
J
= 100 ˚C
I
C
/I
B
=20
1
10
0.1 1 10 100
Reverse Voltage (V)
Capacitance, C (pF
)
T
J
= 25 ˚C
C
ib (EB)
C
ob (CB)
Fig. 3. Typical VBE(ON) vs.
Fig. 1. Typical ICB0 vs. Fig. 2. Typical hFE vs.
Fig. 4. Typical VCE(SAT) vs.
Fig. 5. Typical VBE(SAT) vs. Fig. 6. Typical Capacitances vs.
PAGE . 4
STAD-DEC.02.2005
BC546,BC547,BC548 SERIES
ELECTRICAL CHARACTERISTICS CURVE BC546B,BC547B,BC548B ONLY
0
1
10
100
25 50 75 100 125 150
Junction Temperature, T
J
(
O
C)
I
CB0
, Collector Current (nA
)
V
CB
=30V
0
50
100
150
200
250
300
350
400
450
500
0.01 0.1 1 10 100 1000
Colle ctor Current, IC (mA)
hFE
T
J
=25 ˚C
T
J
=100˚ C
T
J
=150˚ C V
CE
=5V
0
200
400
600
800
1000
1200
0.01 0.1 1 10 100 1000
Collector Current, I
C
(mA)
V
BE(ON)
, (mV)
T
J
= 25 ˚C
T
J
= 150 ˚C
T
J
= 100 ˚C
V
CE
=5V
10
100
1000
0.01 0.1 1 10 100 1000
Collector Current, I
C
(mA)
V
CE(sat)
, (mV)
T
J
= 25 ˚C
T
J
= 150 ˚C
T
J
= 100 ˚C
I
C
/I
B
=20
0
200
400
600
800
1000
1200
0.01 0.1 1 10 100
Collector Cur re nt, I
C
(mA)
V
BE(sat)
, (mV)
T
J
= 25 ˚C
T
J
= 150 ˚C
T
J
= 100 ˚C
I
C
/I
B
=20
1
10
0.1 1 10 100
Reverse Voltage (V)
Capacitance, C (pF
)
T
J = 25 ˚C
Cib (EB)
Cob (CB)
Fig. 3. Typical V
BE(ON)
vs. Collector Current
Fig. 1. Typical I
CB0
vs. Junction Temperature Fig. 2. Typical h
FE
vs. Collector Current
Fig. 4. Typical V
CE(SAT)
vs. Collector Current
Fig. 5. Typical V
BE(SAT)
vs. Collector Current Fig. 6. Typical Capacitances vs. Reverse Voltage
PAGE . 5
STAD-DEC.02.2005
BC546,BC547,BC548 SERIES
ELECTRICAL CHARACTERISTICS CURVE BC547C,BC548C ONLY
0
1
10
100
25 50 75 100 125 150
Junction Temperature, T
J
(
O
C)
I
CB0
, Collector Current (nA
)
V
CB
=30V
Fig. 1. Typical ICB0 vs. Junction
0
200
400
600
800
1000
1200
0.01 0.1 1 10 100 1000
Collector Current, IC, (mA)
hFE
T
J
=25 C
T
J
=100˚ C
T
J
=150˚ C
V
CE
=5V
0
200
400
600
800
1000
1200
0.01 0.1 1 10 100 1000
Collector Current, IC (mA)
VBE(ON)
, (mV)
TJ = 25 ˚C
TJ = 150 ˚C
TJ = 100 ˚C
VCE=5V
10
100
1000
0.01 0.1 1 10 100 1000
Collector Curr ent, I
C
(mA)
V
CE(sat)
, (mV)
T
J
= 25 ˚C
T
J
= 150 ˚C
T
J
= 100 ˚C
I
C
/I
B
=20
0
200
400
600
800
1000
1200
0.01 0.1 1 10 100
Collector Current, I
C
(mA)
V
BE(sat)
, (mV)
T
J
= 25 ˚
C
T
J
= 150 ˚C
T
J
= 100 ˚C
I
C
/I
B
=20
1
10
0.1 1 10 100
Reverse Voltage (V)
Capacitance, C (pF
)
T
J
= 25 ˚C
C
ib (EB)
C
ob (CB)
Fig. 3. Typical V
BE(ON)
vs. Collector Current
Fig. 2. Typical h
FE
vs. Collector
Fig. 4. Typical V
CE(SAT)
vs. Collector
Fig. 5. Typical V
BE(SAT)
vs. Collector Fig. 6. Typical Capacitances vs. Reverse