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c 2012 ROHM Co., Ltd. All rights reserved. 2012.05 - Rev.B
Supply voltage
Input voltage
Output current
Storage temperature
Junction temperature
Power
dissipation
∗
120mW per element must not be exceeded.
Parameter Symbol Limits Unit
V
CC
50 V
V
IN
12 V
−5
I
O
100 mA
I
C (Max.)
100 mA
Tstg −55~+150 °C
Tj 150 °C
PdEMH10,UMH10N 150 (TOTAL) mW
∗
General purpose (dual digital transistors)
EMH10 / UMH10N
Structure Dimensions (Unit : mm)
Epitaxial planar type
NPN silicon transistor
(Built-in resistor type)
Features
1) Two DTC123J chips in a EMT or UMT package.
2) Mounting possible with EMT3 or UMT3 automatic mounting machines.
3) Transistor elements are independent, eliminating interference.
4) Mounting cost and area can be cut in half.
Packaging specifications
UMH10N
EMH10
Type
TN
3000
T2R
8000
−
−
Package
Code
Basic ordering unit (pieces)
Taping
Absolute maximum ratings (Ta=25C)
Equivalent circuit
Electrical characteristics (Ta=25C)
Parameter Symbol
I
I
V
I (off)
V
I (on)
V
O (on)
I
O (off)
R
1
G
I
R
2
/R
1
Min.
−
1.1
−
−
−
1.54
80
17
−
−
0.1
−
−
2.2
−
21
0.5
−
0.3
3.6
0.5
2.86
−
26
VV
CC
=5V, I
O
=100μA
V
O
=0.3V, I
O
=5mA
I
O
/I
I
=5mA/0.25mA
V
I
=5V
V
CC
=50V, V
I
=0V
−
V
O
=5V, I
O
=10mA
V
mA
μA
kΩ
−
−−
Typ. Max. Unit Conditions
f
T
−250 −V
CE
=10V, I
E
= −5mA, f=100MHz
∗
MHz
Input voltage
Output voltage
Input current
Output current
Input resistance
DC current gain
Transition frequency
Resistance ratio
∗
Transition frequency of the device
ROHM : EMT6
EMH10
ROHM : UMT6
EIAJ : SC-88
UMH10N
Abbreviated symbol : H10
Abbreviated symbol : H10
Each lead has same dimensions
0.22
1.2
1.6
(1)
(2)(5)
(3)
(6)
(4)
0.13
0.5
0.5
0.5
1.0
1.6
Each lead has same dimensions
0to0.1
(6)
2.0
1.3
0.9
0.15
0.7
0.1Min.
2.1
0.65
0.2
1.25
(1)
0.65
(4)
(3)
(2)
(5)
R
1
=2.2kΩ
R
2
=47kΩ
DTr
2
DTr
1
(3) (2) (1)
(4) (5) (6)
R
1
R
2
R
2
R
1
EMH10 / UMH10N
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c 2012 ROHM Co., Ltd. All rights reserved. 2012.05 - Rev.B
Data Sheet EMH10 / UMH10N
Electrical characteristic curves
INPUT VOLTAGE : V
I (on)
(V)
OUTPUT CURRENT : I
O
(A)
100μ200μ500μ1m 2m 5m 10m 20m 50m100
m
100
50
20
10
5
2
1
500m
200m
100m
V
O
=0.3V
Ta=−40°C
25°C
100°C
Fig.1 Input voltage vs. output curren
t
(ON characteristics)
INPUT VOLTAGE : V
I (off)
(V)
OUTPUT CURRENT : Io
(A)
03
.0
10m
1
μ
2m
5m
1m
200
μ
500
μ
100
μ
20
μ
50
μ
10
μ
2
μ
5
μ
0.5 1.0 1.5 2.0 2.5
V
CC
=5V
Ta=100°C
25°C
−40°C
Fig.2 Output current vs. input voltag
e
(OFF characteristics)
OUTPUT CURRENT : I
O
(A)
DC CURRENT GAIN : G
I
1k
500
200
100
50
20
10
5
2
1
100μ200μ500μ1m 2m 5m 10m 20m 50m100
m
V
O
=5V
Ta=100°C
25°C
−40°C
Fig.3 DC current gain vs. output
current
OUTPUT CURRENT : I
O
(A)
OUTPUT VOLTAGE : V
O (on)
(V)
100μ200μ500μ1m 2m 5m 10m 20m 50m 100
m
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
l
O
/l
I
=20
Ta=100°C
25°C
−40°C
Fig.4 Output voltage vs. output
current
R1120A
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