CYStech Electronics Corp.
Spec. No. : C308N3-H
Issued Date : 2003.06.27
Revised Date :
Page No. : 1/4
BTPA92N3 CYStek Product Specification
General Purpose PNP Epitaxial Planar Transistor
BTPA92N3
Description
• High breakdown voltage. (BVCEO=-300V)
• Low collector output capacitance.
• Ideal for chroma circuit.
Symbol Outline
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO -300 V
Collector-Emitter Voltage VCEO -300 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -500 mA
Power Dissipation Pd 225 mW
Thermal Resistance, Junction to Ambient RθJA 556
°C/W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
BTPA92N3
SOT-23
B：Base
C：Collector
E：Emitter
CYStech Electronics Corp.
Spec. No. : C308N3-H
Issued Date : 2003.06.27
Revised Date :
Page No. : 2/4
BTPA92N3 CYStek Product Specification
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -300 - - V IC=-100µA
BVCEO -300 - - V IC=-1mA
BVEBO -5 - - V IE=-100µA
ICBO - - -0.25 µA VCB=-200V
IEBO - - -0.1 µA VEB=-3V
*VCE(sat) - - -0.5 V IC=-20mA, IB=-2mA
*VBE(sat) - - -0.9 V IC=-20mA, IB=-2mA
hFE 1 25 - - - VCE=-10V, IC=-1mA
*hFE 2 56 - 270 - VCE=-10V, IC=-10mA
*hFE 3 25 - - - VCE=-10V, IC=-30mA
fT 50 - - MHz VCE=-20V, IC=-10mA, f=100MHz
Cob - - 6 pF VCB=-20V, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE
Rank K P Q
Range 56~120 82~180 120~270
Characteristic Curves
Current Gain vs Collector Current
10
100
1000
0.1 1 10 100
Collector Current---IC(mA)
Current Gain---HFE
HFE@VCE=10V
Saturation Voltage vs Collector Current
10
100
1000
10000
0.1 1 10 100
Collector Current---IC(mA)
Saturation Voltage---(mV)
VCE(SAT)@IC=10IB
CYStech Electronics Corp.
Spec. No. : C308N3-H
Issued Date : 2003.06.27
Revised Date :
Page No. : 3/4
BTPA92N3 CYStek Product Specification
Saturation Voltage vs Collector Current
100
1000
0.1 1 10 100 1000
Collector Current---IC(mA)
Saturation Voltage---(mV)
VBE(SAT)@IC=10IB
Cutoff Frequency vs Collector Current
0.1
1
1 10 100
Collector Current---IC(mA)
Cutoff Frequency---FT(GHZ)
FT@VCE=30V
Power Derating Curve
0
50
100
150
200
250
0 50 100 150 200
Ambient Temperature ---Ta(℃ )
Power Dissipation---PD(mW)
CYStech Electronics Corp.
Spec. No. : C308N3-H
Issued Date : 2003.06.27
Revised Date :
Page No. : 4/4
BTPA92N3 CYStek Product Specification
SOT-23 Dimension
*: Typical
Inches Millimeters Inches Millimeters
DIM Min. Max. Min. Max.
DIM Min. Max. Min. Max.
A 0.1102 0.1204 2.80 3.04 J 0.0034 0.0070 0.085 0.177
B 0.0472 0.0630 1.20 1.60 K 0.0128 0.0266 0.32 0.67
C 0.0335 0.0512 0.89 1.30 L 0.0335 0.0453 0.85 1.15
D 0.0118 0.0197 0.30 0.50 S 0.0830 0.1083 2.10 2.75
G 0.0669 0.0910 1.70 2.30 V 0.0098 0.0256 0.25 0.65
H 0.0005 0.0040 0.013 0.10
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
HJ
K
D
A
L
G
V
C
B
3
2
1
S
Style: Pin 1.Base 2.Emitter 3.Collector
Marking:
TE
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
2D
