61090 2N2222AUB ae SURFACE MOUNT NPN GENERAL PURPOSE ttt ~ TRANSISTOR OPTOELECTRONIC PRODUCTS DIVISION Features FE TION 0.084 (1.37) 0.036 (0.91) 0.046 (1.17) 7 - 0.024 (0.61) 3 PL e Ceramic surface mount package 3 | e Miniature package to minimize circuit board area | e Hermetically sealed [ oo ey @ = MIL-S-19500 screening available oer | nm ' T __fo.as (3.18) | 0.024 (0.61) , eL _ -_ Description 0.115 (2.92) 0.016 (0.41) COLLECTOR EMITTER The 2N2222AUB is a hermetically sealed ceramic surface = 3 2 mount general purpose switching transistor. This miniature BASE ceramic package is ideal for designs where board space 1 and device weight are important requirements. DIMENSIONS ARE IN INCHES (MILLIMETERS) Absolute Maximum Ratings (Ta = 25C unless otherwise noted) Collector-Base Voltage... 0... eee cence cece bebe bbb beet bbbenbeneca. 75V Collector-Emitter Voltage... cer cece tte e ebb tetcec reese, 50V Emitter-Base Voltage .... 6... ccc cece een b beet bbb net b bebe bbb e ce tebeee i, 6V Collector Current-Continuous ... 2.2 ccc cere nee eben bbb be bee eebbeeece le. 800mA Operating Temperature... 2... ccc cece ce cee cree ee eeenenees -65C to +200C Storage Temperature... 60. c eect bb bbb bbb bbeeebees -65C to +200C Maximum Junction Temperature... 0.0 ccc cece eee rene ete ebyetenbbebbbeee. +200C Power Dissipation @ T, = 25C... cece eee eee e ete tneeeeeeens 0.S0W 1/ Soldering Temperature (vapor phase reflow for 30sec)... 00... 0c eee eee nce ce cece. 215C Note: (1) Derate linearly @ 2.85mw/C for T, > 25C.61090 2N2222AUB SURFACE MOUNT NPN GENERAL PURPOSE TRANSISTOR, Continued OPTICAL/ELECTRICAL CHARACTERISTICS AT 25C UNLESS OTHERWISE NOTED. PARAMETER DESCRIPTION TEST MIN | MAX | UNIT CONDITIONS Visriceo Collector-Base Breakdown Voltage lc = 10pA, I, = 0 7S Vv Vieryceo Collector-Emitter Breakdown Voltage Io = 10MA, Ip = 0 50 Vv ViBR)EBO Emitter-Base Breakdown Voltage le = 10nA, I, = 0 6.0 V logo Collector-Base Cutoff Current Veg = 60V, I; = 0 10 nA Vop = GOV, Ie = 0, Ty = 150C 10 pA lees Collector-Emitter Cutoff Current Vee = SOV 50 HA leo Emitter-Base Cutoff Current Veg = 4.0V, Io = 0 10 nA Ne Forward-Current Transfer Ratio Voce = 10V, Ip = 0.1MA 50 : Vog = 10V, Ig = 1.0MA 75 | 325 - Vog = 10V, Ig = 10MA 100 - Vog = 10V, Ig = 150mA 2/ 100 | 300 . Voge = 10V, I, = 500mA 2/ 30 - Vog=10V, I= 10mA, @-55C 35 - Veersan Collector-Emitter Saturation Voltage I, = 150mA, I, = 15mA 2/ 0.30 V le = 500mA, |, = 50mA 2/ 1.0 Vv Veeisar) Base-Emitter Saturation Voltage Io = 150MA, Ip = 15mA 2/ 0.60 | 1.20 V Io = 500mA, I, = SOMA 2/ 2.0 Vv SMALL-SIGNAL CHARACTERISTICS hy, Small Signal Forward Current Transfer Vog=10V, Ip=1.0mA, f=1.0KHZ 50 ; Ratio h, Small Signal Forward Current Transfer Vog=20V, Ip=20mA, f=100MHz 2.5 - Ratio Cobo Open Circuit Output Capacitance Veg=10V, 100kHz < f < 1.0MHz 8.0 pF Co Input Capacitance (Output Open Vep=0.5V, 100kHz sf < 1.0MHz 25 pF Capacitance) ton Turn-On Time Voc=30V, |,=150mA, Ip,=15mA 35 ns ton Turn-Off Time Vog=30V, [=150mA, 300 | ns lp1=lgg=15MA Note: (2) Pulse width < 300s, Duty Cycle < 2.0%.