MIL SPECS ma | OO000125 OOOLO5b & i qT 0l- 14 MIL-S-19500/155E( NAVY) | NOTICE | NOTICE 1 |OF VALIDATION | 25 September 1986 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, GENEERAL PURPOSE TYPES 1N3189, 1N3190, 1N3191, TX AND NON-TX TYPES MIL~S19500/155E(NAVY), dated 2 July 1974, has been reviewed & determined to be valid for use in acquisition, Custodians: Preparing activity: Navy - EC Navy - EC Agent: DLA - ES THIS DOCUMENT CONTAINS J PAGES. AMSC N/A FSC 5961 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited,MIL SPECS Icy OO001e5 OoCLoie o B 7- 0/-/3 MIL~S-19500/155E (NAVY) 2 July 1974 SUPERSEDING MIL-S-19500/155D (NAVY) 23 November 1973 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, GENERAL PURPOSE TYPES 1N3189, 1N3190, 1N3191, TX AND NON-TX TYPES This specification is approved for use by Naval Electronic Systems Command, Department of the Navy, and is available for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for silicon, general purpose semiconductor diodes for use as power rectifiers in equipment circuits and is in accordance with MIL-S-19500, except as otherwise specified herein. The prefix "TX" is used on devices which have been submitted to and have passed the special process- conditioning, testing, and screening as specified in 4.4 through 4.4.5.3, 1.2 Physical dimensions. See figure 1. 1.3 Maximum ratings. Type VR Ig 1p TEs o = T, = 150C T, = 100C 1/120 sec Vde Adc Adc A(pk} 1N3189 200 0.5 1 30 1N3190 400 0.5 1 30 1N3191 600 0.5 1 30 OPERATING JUNCTION TEMPERATURE: -65 to +175C STORAGE AMBIENT TEMPERATURE: ~65 to +175C 2. APPLICABLE DOCUMENTS 2.1 The following documents of the issue in effect on date of invitation for bids or request for proposal, form a part of the specification to the extent specified herein: SPECIFICATION MILITARY MIL-S-19500 - Semiconductor Devices, General Specification for. STANDARDS MILITARY MIL-STD-202 MIL-STD-750 Test Methods for Electronic and Electrical Component Parts. Test Methods for Semiconductor Devices. FSC 5961MIL SPECS cf Oo00125 Ooo104a T yy MIL-S-19500/1S55E (NAVY) (Copies of specifications, standards, drawings, and publications required by suppliers in connection with specific procurement functions should be obtained from the procuring activity or as directed by the contracting officer.) 3. REQUIREMENTS 3.1 General. Requirements for the diodes shall be in accordance with MIL-S-19500 and as specified herein. 3.2 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-S-19500. 3.3 Design, construction, and physical dimensions. The diode shall be of the design, construction, and physical dimensions specified on figure 1. 3.3.1 Lead finish. Lead finish shall be gold plated or tinned. Lead finish may be specified in the contract or order (see 6.2) without affecting the qualified product status of the device or applicable JAN marking. 3.4 Performance characteristics. Performance characteristics shall be as specified in tables I and II (table III is applicable to "TX" types only). 3.4.1 Process-conditioning, testing, and screening for "TX" types. Process- conditioning, testing, and screening for the "TX" types shall be in accordance with MIL-S-19500 and as specified in 4.4. 3.5 Marking. The marking shall be as specified in MIL-S-19500 with the following exceptions: (a) Manufacturer's identification, and country of origin may be omitted at the option of the manufacturer. (b) "TX" devices (all): The type designation may be abbreviated by using the "JX'' prefix in lieu of the "JANTX'" prefix. 5.5.1 It is permissible to have the type designation on more than one line. Examples of acceptable marking are as follows: JANIN JXIN 3189 or 3189 3.5.2 Polarity. The polarity shall be indicated by a diode graphic symbol with the arrow pointing toward the negative terminal for forward bias. 4. QUALITY ASSURANCE PROVISIONS 4.1 Sampling and inspection. Sampling and inspection shall be in accordance with MIL-S-19500, and as specified herein. 4.2 Qualification inspection. Qualification inspection shall consist of the examina- tions and tests specified in tables I and Il. Group A inspection shall be performed on an inspection sublot of each type. Subgroups 1,2,3, and 4 of group B inspection may be performed on an inspection sublot of any type to qualify ali types. Subgroup 5 of group B inspection shall be performed on the highest-voltage type within a barometric-pressure group to qualify that type and all lower-voltage types within the barometric-pressure group. Subgroups 6 and 7 of group B inspection shall be performed on an inspection sublot. Subgroups 8 and 9 of group B inspection shall be performed on an inspection sublot of the highest~ and lowest-voltage types being qualified. 4.2.1 Instability. The device shall be swept through the reverse characteristic to the peak reverse voltage and the trace displayed on an oscilloscope. The device shall, at the same time, be subjected to shocks of 50 G's minimum at a minimum rate of 20 shocks per second for a minimum of 2 seconds or acceptable alternative. Any instability noted in the reverse trace shall be considered a failure.MIL SPECS IC ooo0125 oo01095 1 &j MIL-~S-19500/155E (NAVY) 4.3 Quality conformance inspection. Quality conformance inspection shall consist of examinations and tests specified in groups A and B inspections. 4.3.1 Group A inspection. Group A inspection shall consist of the examinations and tests specified in table I. Group A inspection shall be conducted on an inspection sublot of each type. 4.3.2 Group B inspection, Group B inspection shall consist of the examinations and tests specified in table II. Group B inspection may be done on a lot basis with the exception of subgroups 8 and 9. For subgroups 8 and 9, sublots of the highest-voltage types present in the lot shall be used to accept those types and all intermediate- voltage types. 4.4 Process-conditioning, testing, and screening for "TX" types. The procedure for process-conditioning, testing, and screening the "TX" types shall be in accordance with 4.4.1 through 4.4.5.3, 4.4.1 High-temperature storage. All devices shall be stored at least 48 hours at a minimum temperature (TA) of 175C. 4.4.2, Thermal shock (temperature cycling). Thermal shock (temperature cycling) shall be performed in accordance with MIL-STD-750, method 1051, test condition C, except that 10 cycles shall be continuously performed and the time at the temperature extremes shall be 15 minutes, minimum. 4.4.3 Acceleration. All devices shall be subjected to an acceleration test in accordance with MIL-STD-750, method 2006, with the following exceptions: The test shall be performed one time in the yy orientation only at a peak level of 20,000 G minimum. The l-minute hold-time requirement shall not apply. 4.4.4 Hermetic seal tests. All devices shall be subjected to hermetic seal tests (fine leak followed by gross leak). 4.4.4.1 Hermetic seal (fine-leak) test. All cavity devices shall be fine-leak tested in accordance with MIL-STD-750, method 1071, test condition G or H. 4.4.4.2 Hermetic seal (gross-leak) test (bubble). All devices shall be tested for gross leaks in accordance with MIL-STD-750, method 1071, test condition D, except that the solution may be any suitable noncorrosive liquid at a minimum temperature of 100C.MIL SPECS Icy 00001e5 0001100 4 a MIL-S-19500/155E (NAVY) be | -mfn_ G _ pete, gs rr" | ] - + L JOO MAX(2.54mm) e| | 210 MAX(5,33mm) =| beB DIMENSIONS LTR INCHES MILIME TERS MIN | MAX| MIN MAX OB | .026|.041 . 66 1.04 OD .195 |.230 | 4.95 5. 84 G . 350 8. 89 L {1.000 25.40 NOTES: 1. Metric equivalents (to the nearest .01 mm) are given for general information only and are based upon 1 inch = 25.4 mm. 2. Metric equivalents are in parentheses. 3. Cathode lead shall be electrically connected to the case. If tubulation is used, it shall be on the anode end. FIGURE 1. Semiconductor device, diode IN3189, 1N3190, 1N3191, TX, and non-TX types.MIL SPECS Icg OO00%e5 0001101 & i MIL-S-19500/155E (NAVY) TABLE I. Group A inspection. Exawinatioa MIL-STD-750 LTpPp Limits or test aphat Non- ae Maw . Method Details TX TX Symbol Min | Max Unit Subgroup 1 5 5 Visual and 2071 --- --- | --- | --- mechanical Subgroup 2 5 1 Forward voltage 4011 i = 750 mAdce VE -- 1 Vde Reverse current 4016 1N3189 VR = 200 Vde I, ~-- 5 pAde 1N3190 VR = 400 Vde I -- 5 pAdc 1N3191 Ve = 600 Vde I, ~~ 5 pAde Reverse current 4016 1N3189 Vem = 240 V(pk) Tam --- | 100 [| yA(pk) 1N3190 Vem = 480 V(pk) Tom --- | 100 | yA(pk) 1N3191 Ven = 720 V(pk) Tow --~ | 100 } pA(pk) Instability See 4.2.1 Subgroup 3 5 3 High temperature T, = 150C --- ne en operation Reverse current 4016 1N3189 R 200 Vde IR --- | 500 | pAde 1N3190 VR = 400 Vde I --- | 500 | pAdc 1N3191 VR = 600 Vde IR --- | 500 | pAdc TABLE II. Group B inspection. Examination MIL-STD-750 LTPD Limits or test Method Details Non- vr Symbol | Min | Max Unit TX Ta Subgroup 1 20 20 Physical 2066 --- aoe f oe | oe dimensions Subgroup 2 15 10 Solderability 2026 --- som fom fer Temperature 1051 Test condition Fl --- coop tarp ten cycling - Thermal shock 1056 Test condition A --- wat peep mae Moisture 1021 ee ane wee + resistanceMIL SPECS MIL-S-19500/155E (NAVY) Ke | O00012e5 Oo01102 4 q TABLE II. Group B inspection - Continued. Examination MIL-STD-750 LIPD Limits or test Method Details Non= Symbol { Min | Max | Unit TX TX Subgroup 2 ~ continued End points: Forward voltage | 4011 I = 750 mAdc Vv, ~~~ [| 1.0 | Vde Reverse current 4016 1N3189 VR = 200 Vde I, --~ 5.0 vAde 1N3190 VR = 400 Vde qT, -~ {| 5.0 | pAde 1N3191 VR = 600 Vdc IR -- | 5.0 | pAdc Subgroup 3 15 10 Shock 2016 Nonoperating; -- cee fae] ae 1,500G, 5 shocks 0.5 ms 2 major axes Constant 2006 10,0006 (non- - -- -~ -- acceleration operating) Vibration, 2056 Nonoperating --- weep tee Pe variable frequency End points: (Same as subgroup 2) Subgroup 4 15 10 Terminal strength! 2036 Test condition E --~ --- = (lead fatigue} Subgroup 5 15 | 45 Barometric 1001 pressure, reduced 1N3189 Vp = 200 Vde ~-- m-- [wee | =e 1N3190 VR = 400 Vdc --- woe fp mee pace 1N3191 Vp = 600 Vde mee fmec fp wee Altitude = 70,000 feet Salt atmosphere 1041 _- ceo foes pee End points: (Same as subgroup 2)MIL SPECS Ic 0000125 0001103 T i MIL-S-19500/155E (NAVY) TABLE II. Group B inspection - Continued. Examination MIL-STD-750 LTPD Limits or test Method Details ie ox | Symbol | Min | Max | Unit Subgroup 6 15 5 Surge current 4066 Tosm = 30A(pk) --- re a Ih = 250 mAdc 5 surges, 1 surge/min End points: (Same as subgroup 2) Subgroup 7 15 15 Peak reverse T, = -65C A voltage 1N3189 Vem = 240 V(pk) Tom --- | 100 | pA(pk) 1N3190 Vom = 480 V(pk) Tam -- 100 yA (pk) 1N3191 Vem = 720 V(pk) Tom --~ 100 | pA(pk) Subgroup 8 A=10 =5 Steady state 1026 Iy = 1.0 Adc operation life T, = 100 +3C 1N3189 Vp (RMS) = 140 Vac 7 --- --- --- 1N3190 Vp (RMS) = 280 Vac --- are fone [on 1N3191 V, (RMS) = 420 Vac --- wer foe fe End points: Forward voltage | 4011 1, = 750 mAdc Ve o-~ [1.1 J Vde Reverse current | 4016 1N3189 VR = 200 Vde In --~ 10.0 } pAdc 1N3190 VR = 400 Vde IR von 10.0 | pAdc 1N3191 Ve = 600 Vde I, ~--- | 10.0] pAdc Subgroup 9 A=10 As5 High temperature | 1031 T, = 175 3C --- wee [ene f-- . A life (non- operating) End points: (Same as subgroup 8)MIL SPECS Icy O0003%e5 0001104 i i MIL-S-19500/155E (NAVY) 4.4.5 Preburn-in tests. The parameters I, and Vp of table III shall be measured and the data shall be recorded for all devices in the lot. A411 devices shall be handled and identified such that the delta end points can be determined after the burn-in test. All devices which fail to meet these requirements initially shall be removed from the inspection lot and the quantity removed shall be noted on the permanent lot history. TABLE III. Burn-in test measurements. MIL-STD-750 Symbol Limits Unit Test Method Details Min Max (Ty = 25 +3C) Reverse current | 4016 1N3189; Vp = 200 Vde ~ IR --- | 5.0 | wAde 1N3190; Vp = 400 Vdc IR --- 5.0 | wAde 1N3191; Vp = 600 Vde Ip --- 5.0 } Ade Forward voltage 4011 Ip = 750 mAdc Vp --- 1.0 | Vde 4.4.5.1 Burn-in test. All devices shall be operated for 96 hours minimum under the following conditions: Ta = 100C minimun Vp = 140 Vac(rms) - 1N3189 280 Vac(rms) - 1N3190 420 Vac(rms) - 1N3191 Ig = 1.0 Ade 4.4.5.2 Post-burn-in tests. The parameters Ip and VE of table III shall be retested after burn-in and the data shall be recorded for all devices in the lot. The parameters measured shall not change during the burn-in test from initial value by more than the following amount: Alp AVp 100 percent or 2 wAdc, whichever is greater. 40.025 Vdc. 4.4.5.3 Burn-in test failures. All devices that exceed the delta (A)limits of 4.4.5.2 or the limits of table III after burn-in shall be removed from the inspection 1t and the quantity removed shall be noted on the permanent lot history. Where the quantity removed after burn-in exceeds 10 percent of the total inspection lot on burn-in test, the entire lot shall be unacceptable. Acceptable devices shall then be tested in accordance with the requirements of group A inspection (table I) and group B inspection (table IT). 5. PREPARATION FOR DELIVERY 5.1 Preparation for delivery, Preparation for delivery shall be in accordance with MIL-S-19500. 6. NOTES 6.1 Notes. The notes specified in MIL-S-19500 are applicable to this specification. 6.2 Ordering data. Procurement documents should specify the following: Lead finish if preference exists (see 3.3.1). User activities: Preparing activity: Navy - AS, OS, MC, CG, SH Navy - EC Agent: DSA - ES (Project 5961-N599) 3 U.S, GOVERNMENT PRINTING OFFICE: 1974 -603- 108/756 8