FDD6637-F085 P-Channel PowerTrench® MOSFET
©2010 Semiconductor Components Industries, LLC.
September-2017, Rev. 3
Publication Order Number:
FDD6637-F085/D
1
FDD6637-F085
P-Channel PowerTrench® MOSFET
-35V, -21A, 18mΩ
Features
Typ rDS(on) = 9.7mΩ at VGS = -10V, ID =- 14A
Typ rDS(on) = 14.4mΩ at VGS = -4.5V, ID =- 11A
Typ Qg(10) = 45nC at VGS = -10V
High performance trench technology for extremely low
rDS(on).
Qualified to AEC Q101
RoHS Compliant
Applications
Inverter
Power Supplies
FDD6637-F085 P-Channel PowerTrench® MOSFET
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MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Thermal Characteristics
Symbol Parameter Ratings Units
VDSS Drain to Source Voltage -35 V
VDS(Avalanche) Drain to Source Avalanche Voltage (maximum) -45 V
VGS Gate to Source Voltage ±25 V
ID
Drain Current Continuous (TC < 155oC, VGS = 10V) -21 A
Pulsed See Figure 4
EAS Single Pulse Avalanche Energy (Note 1) 61 mJ
PD
Power Dissipation 68 W
Dreate above 25oC0.46W/
oC
TJ, TSTG Operating and Storage Temperature -55 to + 175 oC
RθJC Maximum Thermal Resistance Junction to Case 2.2 oC/W
RθJA Maximum Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 40 oC/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDD6637 FDD6637-F085 TO-252 13” 12mm 2500 units
Electrical Characteristics TC = 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V -35 - - V
IDSS Zero Gate Voltage Drain Current VDS = -28V, VGS = 0V - - -1 μA
IGSS Gate to Source Leakage Current VGS = ±25V - - ±100 nA
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250μA-1-1.6-3V
rDS(on) Drain to Source On Resistance
ID = -14A, VGS= -10V - 9.7 11.6
mΩID = -11A, VGS= -4.5V - 14.4 18
ID = -14A, VGS= -10V, TC = 150oC - 15.3 18
gFS Forward Transconductance VDS = -5V, ID = -14A - 35 - S
Ciss Input Capacitance VDS = -20V, VGS = 0V,
f = 1MHz
- 2370 - pF
Coss Output Capacitance - 470 - pF
Crss Reverse Transfer Capacitance - 250 - pF
RGGate Resistance f = 1MHz - 3.6 - Ω
Qg(TOT) Total Gate Charge at -10V VGS = 0 to -10V
VDD = -20V
ID = -14A
-4563nC
Qg(5) Total Gate Charge at -5V VGS = 0 to -5V - 25 35 nC
Qgs Gate to Source Gate Charge -7-nC
Qgd Gate to Drain “Miller“ Charge - 10 - nC
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Electrical Characteristics TC = 25oC unless otherwise noted
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
Symbol Parameter Test Conditions Min Typ Max Units
td(on) Turn-On Delay Time
VDD = -20V, ID = -1A,
VGS = -10V,
RGEN = 6Ω
-1832ns
trRise Time - 10 20 ns
td(off) Turn-Off Delay Time - 62 100 ns
tfFall Time - 36 58 ns
VSD Source to Drain Diode Voltage ISD = -14A - -0.8 -1.2 V
trr Reverse Recovery Time IF = -14A, dISD/dt = 100A/μs-2837ns
Qrr Reverse Recovery Charge - 15 20 nC
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
1: Starting TJ = 25oC, L = 1mH, IAS = -11A, VGS=10V, VDD=-35V during the inductor charging time and 0V during the time in avalanche
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Typical Characteristics
Figure 1. Normalized Power Dissipation vs Case
Temperature
0 25 50 75 100 125 150 175
0.0
0.2
0.4
0.6
0.8
1.0
1.2
POWER DISSIPATION MULTIPLIER
TC, CASE TEMPERATURE(oC)
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
25 50 75 100 125 150 175
0
10
20
30
40
50
60
70
CURRENT LIMITED
BY PACKAGE
RθJC = 2.2oC/W
VGS = -4.5V
VGS = -10V
-ID, DRAIN CURRENT (A)
TC, CASE TEMPERATURE (oC)
Figure 3.
10-5 10-4 10-3 10-2 10-1 100101
0.01
0.1
1
SINGLE PULSE
D = 0.50
0.20
0.10
0.05
0.02
0.01
NORMALIZED THERMAL
IMPEDANCE, ZθJC
t, RECTANGULAR PULSE DURATION(s)
DUTY CYCLE - DESCENDING ORDER
2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TC
PDM
t1
t2
Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
10-5 10-4 10-3 10-2 10-1 100101
10
100
1000
VGS = 10V
SINGLE PULSE
-IDM, PEAK CURRENT (A)
t, RECTANGULAR PULSE DURATION(s)
T
C
= 25
o
C
I = I
2
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
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Figure 5.
0.3 1 10 90
0.1
1
10
100
300
100us
1ms
10ms
-ID, DRAIN CURRENT (A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
DC
Forward Bias Safe Operating Area
0.001 0.01 0.1 1 10 100
1
10
60
STARTING TJ = 150oC
STARTING TJ = 25oC
-IAS, AVALANCHE CURRENT (A)
tAV, TIME IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
NOTE: Refer to ON Semiconductor Application Notes AN7514
and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7.
0123456
0
20
40
60
80
100
TJ = -55oC
TJ = 25oC
TJ = 175oC
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VDD = -5V
-ID, DRAIN CURRENT (A)
-VGS, GATE TO SOURCE VOLTAGE (V)
Transfer Characteristics Figure 8.
012345
0
20
40
60
80
100
VGS = -4.5V
VGS = -5V
VGS = -3V
VGS = -3.5V
VGS = -4V
VGS = -6V
VGS = -10V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
Saturation Characteristics
Figure 9.
246810
0
10
20
30
40
50
60
70
ID = -14A PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
rDS(on), DRAIN TO SOURCE
ON-RESISTANCE (mΩ)
-VGS, GATE TO SOURCE VOLTAGE (V)
TJ = 25oC
TJ = 175oC
Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10.
-80 -40 0 40 80 120 160 200
0.6
0.8
1.0
1.2
1.4
1.6
1.8
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
ID = -14A
VGS = -10V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ, JUNCTION TEMPERATURE(oC)
Normalized Drain to Source On
Resistance vs Junction Temperature
Typical Characteristics
FDD6637-F085 P-Channel PowerTrench® MOSFET
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Figure 11.
-80 -40 0 40 80 120 160 200
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
VGS = VDS
ID = -250μA
NORMALIZED GATE
THRESHOLD VOLTAGE
TJ, JUNCTION TEMPERATURE(oC)
Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
-80 -40 0 40 80 120 160 200
0.90
0.95
1.00
1.05
1.10
ID = -250μA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
TJ, JUNCTION TEMPERATURE (oC)
Figure 13.
0.1 1 10 100
100
1000
10000
f = 1MHz
VGS = 0V Crss
Coss
Ciss
CAPACITANCE (pF)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Capacitance vs Drain to Source
Voltage
Figure 14.
0 1020304050
0
2
4
6
8
10
VDD = -30V
VDD = -10V
-VGS, GATE TO SOURCE VOLTAGE(V)
Qg, GATE CHARGE(nC)
VDD = -20V
Gate Charge vs Gate to Source Voltage
Typical Characteristics
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