~ MOSPOWER Cross Reference List (Cont) SIEMENS (Cont'd) Industry BVpss fDS(on) Siliconix . BVpss 'DS(on) Part No. (Volts) (Ohms), PACKAGE | Equivalent (Volts) (Ohms) BUZ 14 50 0.04 TO-3 _ _ _ BUZ 15 50 0.03 TO-3 oo _ BUZ 20 100 0.20 TO-220 VN1000D 100 0.18 BUZ 21 100 0.10 TO-220 IRF522 100 0.4 BUZ 23 100 0.20 TO-3 VN1000A 100 0.18 BUZ 24 100 0.06 TO-3 _ _ _ BUZ 25 100 Q.10 TO-3 IRF540 100 0.085. BUZ 30 200 0.75 TO-220 IRF632 200 0.6 BUZ 31 200 0.20 TO-220 IRF640 200 0.18 BUZ 33. 200 0.75 TO-3 IRF232 200 0.6 BUZ 34 200 0.20 TO-3 IRF240 200 0.18 BUZ 40 500 45 TO-220 IRF822 500 4.0 BUZ 41 500 1.1 TOQ-220 IRF842 500 1.1 BUZ 43 500 45 TO-3 - IRF422 500 40 BUZ 44 500 1.1 TO-3 IRF442 500 1.1 BUZ 45 500 0.6 TO-3 IRF452 500 0.5 BUZ 50 1000 3.5 TO-220 _ _ _ BUZ 53 1000 3.5 TO-3 | _ _ _ BUZ 54 1000 2.0 TO-3 _ _ _ BUZ 80 800 2.6 TO-220 _ _ _ BUZ 83 800 2.6 TO-3 _ _ _ BUZ 84 800 1.3 TO-3 - _ ~ SONY 28J54 210 1.0 TO~220 _ _ _ 28K173 210 1.0 TO-220 IRF232 200V 0.6 SUPERTEX VNO104N1 40 4.0 TO-3 VN67AA 60 3.5 VNO104N2 40 4.0 TO-39 VN67AB 60 3.5 VNO104N3 40 4.0 TO-92 _ _ _ VNO104N4 40 4.0. TO-202 VN46AF 40 3.0 VNO104N5 40 4.0 TO+220 VN46AD 40 3.0 VNO104N6 40 4.0 DIP VQ1004J** 60 3.5 VNO106N1 60 4.0. TO-3 VN67AA 60 3.5 VNO106N2 60 4.0 TO-39 VN67AB 60 3.5 VNO106N3 60 4.0 TO-92 _ _ _ VNO106N4 60 4.0 TO-202 VN67AF 60 3.5 VNO106N5 60 4.0 TO-220 VN67AD 60 3.5 VNO106N6 60 4.0 DIP VQ1004J** 60 3.5 VNO108N1 80 4.0 TO-3 2N6658 90 4.0 VNO108N2 80 4.0 TO-39 2N6661 90 4.0 VN0108N3 80 4.0 TO-92 _ _ _ VNO108N4 80 4.0 TO-202 VN88AF 80 4.0 VNO108N5 80 4.0 TO-220 VN88AD 80 4.0 VNO108N6 80 4.0 DIP VQ1006J** 90 4.5 VNO109N14 90 40 TO-3 2N6653, 90 4.0 VNO109N2 90 4.0 TO-39 2N6661 90 4.0 VN0O109N3 90 4.0 TO-92 _ _ _ VNO109N4 90 40 TO-202 _ _ _ VNO109N5 90 4.0 TO-220 . _ _ VNO109N6 90 4.0 DIP VQ1006J** 90 45. VN0204N1 40 2.0 TO-3 _ _ _ VNO204N2 40 2.0 TO-39 _ _ - VNO204N5 40 2.0 TO-220 _ _ _ VNO204N6 40 2.0 DIP _ _ _ VNO206N1 60 2.0 TO-3 _ _ _- VNO206N2 60 2.0 TO-39 _ _ _ VNO206N5 - 60 2.0 TO-220 _- _ _ VNO206N6 60 2.0 DIP _ - - VNO208N1 80 2.0 TO-3 _ _ _ VNO208N2 80 2.0 TO-39 ~_ _ _ VNO208N5 80 2.0 TO-220 _ _ _ VNO208N6 80 2.0 DIP _ _ _ VNO209N 1 90 2.0 TO-3 _ _ _ VNO209N2 90 2.0 TO-39 _ _ _- VNO209N5 90 2.0 TO-220 _ _ _ VNO209N6 90 2.0 DIP _ _ VNO330N1 300 3.0 TO-3 IRF323 350 2.5 VNO330N2 300 3.0 TO-39 _ - _- **Refer to data sheet for pinout differences Siliconix IST] QOUSIOJOY SSOID UIMOdSOWMOSPOWER Selector Guide MOSPOWER Selector Guide, (Continued) N-Channel MOSPOWER R (Continued) Breakdown - Ip Power Patt Device Voltage (ones) Continuous Dissipution N oD (Volts) (Ohms (Amps) (Watts) umber 200 0.18 18.0 125 IRF640 200 0.22 16.0 125 IRF642 200 0.4 9.0 75 IRF630 200 0.6 8.0 75 IRF632 200 0.8 5.0 40 IRF620 200 1.2 4.0 40 IRF622 170 6.0 1.4 20 VN1706D 150 0.18 18.0 125 IRF641 150 0.22 16.0 125 IRF643 150 0.4 9.0 75 IRF631 150 0.6 8.0 75 IRF633 150 0.8 5.0 40 IRF621 150 1.2 4.0 40 IRF623 120 0.18 14.0 75 VN1200D 120 0.25 12.0 75 VN12Q1D 120 6.0 1.4 20 VN1206D 100 0.085 27.0 125 IRF540 100 0.11 24.0 125 IRF542 100 0.18 14.0 75 VN1000D 100 0.18 14.0 75 IRF530 100 0.25 12.0 75 VN1001D 100 0.25 12.0 75 IRF532 . 100 0.30 8.0 40 IRF520 TO-220AB 100 0.40 7.0 40 iIRF522 80 0.18 14.0 75 VNO800D 80 0.25 12.0 75 VNO0801D 80 4.0 1.7 20 VN88AD 80 4.5 1.6 20 VN89AD 60 0.085 27.0 125 IRF541 60 0.11 24.0 125 IRF543 60 0.12 18.0 75 VNO600D 60 0.15 16.0 75 VNO601D 60 0.18 14.0 75 IRF531 60 0.25 12.0 75 IRF533 60 0.30 8.0 40 IRF521 60 0.40 7.0 40 IRF523 60 3.0 1.9 20 VN66AD 60 3.5 1.8 20 VN67AD 40 0.12 18.0 75 VNO400D 40 0.15 16.0 75 VNO401D 40 3.0 1.9 20 VN46AD 40 5.0 1.5 20 VN40AD 30 1.2 2.5 20 VNO300D 80 4.0 1.5 15 VN88AF 80 45 1.4 15 VN89AF 80 5.0 1.3 15 VNS80AF 60 3.0 1.7 15 " VNBG6AF 60 3.5 1.6 15 *NNG7TAF A 40 3.0 16 15 VN46AF. TO-202A 40 5.0 1.3 15 VN40AF 240 6.0 0.8 6.25 VN2406B 170 6.0 0.8 6.25 VN1706B 120 6.0 0.8 6.25 VN1206B 100 0.3 6.0 20 IRFF120 100 0.4 5.0 20 IRFF122 90 4.0 0.9 6.25 2N6661 90 45 0.9 6.25 VNI9SAB 90 5.0 0.8 6.25 VNS0AB 60 0.3 6.0 20 IRFF121 + 60 0.4 5.0 20 IRFF123 0-38 60 3.0 1.1 6.25 2N6660 60 3.5 1.0 6.25 VN67AB 35 1.8 1.4 6.25 2N6659 _35 25 412 6.25 VN35AB SiliconixIRF120 IRF124 = IRF122 = IRF123 _IRFS20 = IRF524 = IRF522 = IRF523 IRF120 IRF{24 # IRF122 IRF123 IRF520 IRF524 IRF522 IRF523 -Channel Enhancement Mode 400Vmospower Siliconix Advanced Information These power FETs are designed especially for off-line switching regulators, converters, solenoid and relay drivers. FEATURES Product Summary Part PIN 2 Source CASE Drain : ; Number BVpss Rosion) Ip Package a High Voltage , IRF120 - 400V a No Second Breakdown REID, Sov 0.302 BA a High Input Impedance RFID Toov TO-3 a Internal Drain-Source Diode - 0.400 7A IRF123 60V a Very Rugged: Excellent SOA TRFS20 T00V _a@ Extremely Fast Switching TAFS21 Sov] (0-302 BA. ro-soone BENEFIS we er ea | o ws Reduced Component Count a improved Performance o = Simpler Designs it m Improved Reliability oS s ABSOLUTE MAXIMUM RATINGS (Tc = 25C unless otherwise noted) Drain-Source Voltage Drain Gurrent IRF120, 122, 520, 522 ....... Lecce ese ete stone teens een tees 100V Pulsed (804s to 3004s, 1% duty cycle)....... fee eeeneetaes +32A WRF121, 123, 521,523... ccc sneer etre teens 60V Gate Current (Peak) oocccccccccccccscccsesecesecseeees co. 3 |. Oe te ee8 500 100V Gate-Source Voltage ........... cece cece en en eee ree e eens +40V IRF121, 123, 521,523... eee eee cere tence eee ee ee 60V Total Power Dissipation ...... eek e cere eet ee eee ett e nee 40 W Linear Derating Factor... 2.0... ccc cccc rece eee eee ee 0.32 W/C Drain Current Continuous IRF 120, 121, 520, 521 Operating and Storage . IRF 122, 123, 522, 523 Temperature ..... ee cece eee cnn ccna ee! 55C to + 150C PACKAGE DIMENSIONS + @.450 (17.43) 290 bee (25) 5260 76.36) te zi p80 (2.04) 0.135 max Max ct yp (F.429} 0.043 (1.092) 9-312 sean 0.038 76.965) aan $00 (12.70) PLANE 1.197 (30.404) } pia 9.181 14.08) ie O675 (17.145) [a7 (29.896) oe 098) ae 0.655 (16.637) T 0.188 wax 245 (1.15) ats BOTH ENDS 380 [ 60) - 070 (17% 0.440 (11,176) A 2 \ 420 (70.66) 4 0420 770.668) ~ 74 f | ' ~My 0.161. (4.089) 048 17.15) } 0.225 (6.715) 0528 OTB (3.835) cd aa - 0.208" 5,207) BorToM view (13335) BMAX PIN 1 Gate TO-3 PIN 1 Gate TO-220AB PIN 2 & TAB Drain PIN 3 Source SiliconixELECTRICAL CHARACTERISTICS (Tc =25C unless otherwise noted) Part sa . Parameter Number. | Me Typ Max Unit Test Conditions / Static IRF120, 520 | 144 Drain-Source Breakdown IRF122, 522 BYoss Voltage IRF121, 521 ay | Vas =9, [p= 250uA IRF 123, 523 60 . Vestn Gate Threshold Voltage All 2.0 4.0 V_s| Vps= Ves: Ipb= 1 mA less Gate-Body Leakage All +100 nA Vas = + 20V, Vos = 0 Zero Gate Voltage Drain 0.4 0.25 Vos = Rated Vos: Ves= 9 loss Current All: mA u 0.2 1.0 Vpg = Rated Vos, Vag = 0, To = 125C loton) On-State Drain Current All 8.0 A Vos = 25V, Vag = 10V (Note 1) IRF120, 121 , 0.25 0.30 Static Drain-Source On-State _ |_!RF520, 521 _ 'oSion) Resistance TAFI22, 123 2 | Veg =10V, Ip =4A (Note 1) IRF522, 523 0.30 | 0.40 Dynamic Os Forward Transconductance All 1.5 2.5 Ss Vos = 25V, Ip = 4A (Note 1) Cigs Input Capacitance 450 600 Coss Output Capacitance All 200 400 pF Ves = 9, Vos = 25V, = 0.1 MHz Crss Reverse Transfer Capacitance 50 100 {aion) Turn-On Delay Time All 20 40 tr Rise Time Alt 35 70 Vop= 30V, [pz 4A, R= 72, Ry = 259 ns taor) Turn-Off Delay Time All 0.| 100 (Figure 1) tr Fall Time . All| 35 70 a Orain-Source Diode Characteristics Vsp Forward On Voltage All : -1.9 Vv ig =-8A (Note 1) te Reverse Recovery Time All 150 ns Ip =B8A, Veg =0, di/dt = 100A/us (Fig. 2) Note 1: Pulse test 80 ys to 300 us, 1% duty cycle TEST CIRCUITS FIGURE 1 Switching Test Circuit 4 ~ 7 i | | | ; Sen | | 1 1 Fe a. | 20V 1 | 3 T's | | Py | |p eincurr = { PULSE UNDER [generaToR] LEST I PW. = 1 ys Cg < 50 pF BUTY CYCLE = 1% FIGURE 2 JEDEC Reverse Recovery Circuit FROM TRIGGER CKT di/dt Adjust (1 - 27 uH) _ .* 5 TO 50uF _. (pkyAdjust : ) sq IN4001 4000uF Se pi- - 4 R$ 0.252 L $0.01nH + -} A IN4723 2N4204 SCOPE J D> Siliconix 2Gial = CCSAMl = bCSIal = OZSAaI S2bsal = Cobsal = bObIal = OSbsalELECTRICAL CHARACTERISTICS (Tc =25C unless otherwise noted) Parameter |Part Number| Min | Typ | Max [ Unit { Test Conditions Static IRF130, 132 | 499 8Vpss Drain-Source Breakdown IRF530, 532 Vv Vas = 0, Ip = 250uA Voltage IRF131, 133 60 tRF531, 533 Vesith Gate Threshold Voltage All 2.0 4.0 Vv Ves= Vos, p= 1 mA lass Gate-Body Leakage All +100 nA Vas = + 20V, Vos =0 I Zero Gate Voltage Drain All 0.25 mA Vps = Rated Vos Vas = 0 PSS Current 1.0 Vog = Rated Vag Vag = 9, T= 125C IRF 130, 131 1.44 Vosion Drain-Source ON-State IRF530, 531 v Ves" 10V, 1,,= 8A, (Note 1) Voltage IRF132, 133 20 IRF532, 533 IRF 130, 131 0.18 rosiom Drain-Source On tRF530, 531 2 Vag 10V, |= 8A (Note 1) Resistance IRF132, 133 0.25 IRF532, 533 . lojon) _ On-State Drain Current All 14 A | Vog = 25V, Vag = 10V, (Note 1) Dynamic ts Forward Transconductance All 4.0 S | Vos= 25V, |p = 8A, (Note 1) Ciss Input Capacitance All 800 Reverse Transfer Crs Capacitance Al 150 pF Ves = 0, Vos = 25V, f= 1 MHz Coss Output Capacitance All 500 taion) Turn-On Delay Time All 30 te Rise Time All 75 ns__| Yoo=30V, Ip=8A, R, =3.59, Ry = 102 taoty Turn-Off Delay Time All 40 (Figure 1) ty Fall Time All 45 Drain-Source Diode Characteristics Vsp Forward On Voltage All -1.5 v Ig = 14A, Veg = 0 (Note 1) ; Ip =-14A, di/dt = 100A/us, Veg = 0 All 10 ns FE . US, Ves tr Reverse Recovery Time 30 (Figure 2) Note 1: Pulse test 80 us to 300 us, 1% duty cycle Refer to VNDA12 Design Curves (See Section: 4) TEST CIRCUITS FIGURE 2 JEDEC Reverse Recovery Circuit FIGURE 1 Switching Test Circuit | VN 502 di/dt Adjust Vin Yop (1-27 uH) +. 5 TO 50uF -- | IN4933 x _ | epqy Adjust L i 7 | j | : . ed | | 2409 ro +2 IN4001 | | 4000uF SS >t | | 7 4 | | R$ 0.259 | | ciReuit = { L$ 0.01uH PULSE UNDER [generaron| LEST | 4 + i ww PW. = 1 ys Cg <50 pF IN4723 | r 2N4204 DUTY CYCLE = 1% l SCOPE FROM TRIGGER CKT Siliconix essai = ZESdal = LESdal = OESidl cebddl = Cebdal = VEbsal = Obsal