Rev.1.00, Aug.20.2004, page 1 of 6
FS100UMJ-03F
High-Speed Switching Use
Nch Power MOS FET REJ03G0249-0100
Rev.1.00
Aug.20.2004
Features
• Drive voltage : 4 V
• VDSS : 30 V
• rDS(ON) (max) : 4.0 mΩ
• ID : 100 A
• Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 80 ns
Outline
TO-220
1
123
4
1. Gate
2. Drain
3. Source
4. Drain
3
2, 4
Applications
Motor control, lamp control, solenoid control, DC-DC converters, etc.
Maximum Ratings
(Tc = 25°C)
Parameter Symbol Ratings Unit Conditions
Drain-source voltage VDSS 30 V VGS = 0 V
Gate-source voltage VGSS ±20 V VDS = 0 V
Drain current ID100 A
Drain current (Pulsed) IDM 400 A
Avalanche current (Pulsed) IDA 100 A L = 10 µH
Source current IS100 A
Source current (Pulsed) ISM 400 A
Maximum power dissipation PD125 W
Channel temperature Tch – 55 to +150 °C
Storage temperature Tstg – 55 to +150 °C
Mass — 2.0 g Typical value
FS100UMJ-03F
Rev.1.00, Aug.20.2004, page 2 of 6
Electrical Characteristics
(Tch = 25°C)
Parameter Symbol Min. Typ. Max. Unit Test conditions
Drain-source breakdown voltage V(BR)DSS 30 — — V ID = 1 mA, VGS = 0 V
Gate-source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 V
Drain-source leakag e current IDSS — — 100 µAV
DS = 30 V, VGS = 0 V
Gate-source leakage current IGSS ——±10 µAV
GS = ±20 V, VDS = 0 V
Gate-source threshold voltage VGS(th) 1.0 1.5 2.0 V ID = 1 mA, VDS = 10 V
Drain-source on-state resistanc e rDS(ON) —3.14.0mΩID = 50 A, VGS = 10 V
Drain-source on-state resistanc e rDS(ON) —4.25.7mΩID = 50 A, VGS = 4 V
Drain-source on-state voltage VDS(ON) — 0.16 0.20 V ID = 50 A, VGS = 10 V
Forward transfer admittance | yfs | — 120 — S ID = 50 A, VDS = 10 V
Input capacitance Ciss — 7600 — pF
Output capacitance Coss — 230 0 — pF
Reverse transfer capacitance Crss — 1000 — pF
VDS = 10 V, VGS = 0 V,
f = 1MHz
Turn-on delay time td(on) —30—ns
Rise time tr— 170 — ns
Turn-off delay time td(off) — 520 — ns
Fall time tf— 290 — ns
VDD = 15 V, ID = 50 A,
VGS = 10 V,
RGEN = RGS = 50 Ω
Source-drain voltage VSD —1.01.5VI
S = 50 A, VGS = 0 V
Thermal resistance Rth(ch-c) — — 1.0 °C/W Channel to case
Reverse recovery time trr —80—nsI
S = 50 A, dis/dt = – 50 A/µs
FS100UMJ-03F
Rev.1.00, Aug.20.2004, page 3 of 6
Performance Curves
Drain Power Dissipation Derating Curve
Case Temperature Tc (°C)
Drain Power Dissipation PD (W)
Maximum Safe Operating Area
Drain-Source Voltage VDS (V)
Drain Current ID (A)
Output Characteristics (Typical)
Drain Current ID (A)
Drain-Source Voltage VDS (V)
Output Characteristics (Typical)
Drain Current ID (A)
Drain-Source Voltage VDS (V)
On-State Voltage vs.
Gate-Source Voltage (Typical)
Gate-Source Voltage VGS (V)
Drain-Source On-State Voltage VDS(ON) (V)
On-State Resistance vs.
Drain Current (Typical)
Drain Current ID (A)
Drain-Source On-State Resistance rDS(ON) (mΩ)
0
50
25
75
100
125
150
020050 100 150
10
1
3
5
7
10
2
2
10
0
2
3
5
7
10
3
7
2
3
5
210
0
23710
1
555710
2
33 7
tw = 10µs
100µs
10ms
100ms
1ms
DC
0
20
40
60
80
100
0 0.2 0.4 0.6 0.8 1.0
3V
4V
0
10
20
30
40
50
0 0.1 0.2 0.3 0.4 0.5
0
2
4
6
8
10
10
1
10
2
10
3
37 752
10
0
375232 5
10V
0
0.2
0.4
0.6
0.8
1.0
0246810
70A
50A
V
GS
= 4V
I
D
= 100A
5V
3V
4V
6V
V
GS
= 10V
5V
Tc = 25°C
Single Pulse
V
GS
= 10V
6V
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
FS100UMJ-03F
Rev.1.00, Aug.20.2004, page 4 of 6
Transfer Characteristics (Typical)
Gate-Source Voltage VGS (V)
Drain Current ID (A)
Forward Transfer Admittance vs.
Drain Current (Typical)
Drain Current ID (A)
Forward Transfer Admittance | yfs | (S)
Switching Characteristics (Typical)
Drain-Source Voltage VDS (V)
Capacitance vs.
Drain-Source Voltage (Typical)
Drain Current ID (A)
Capacitance (pF)
Switching Time (ns)
Gate-Source Voltage vs.
Gate Charge (Typical)
Gate Charge Qg (nC)
Gate-Source Voltage VGS (V)
Source-Drain Diode Forward
Characteristics (Typical)
Source-Drain Voltage VSD (V)
Source Current IS (A)
0
20
40
60
80
100
02468
10 10
0
10 10
1
247
2
35 2 4357
10
1
2
2
3
4
5
7
10
2
2
3
4
5
7
0
2
4
6
8
10
12004080 160
200 0
20
40
60
80
100
0 0.4 0.8 1.2 1.6 2.0
V
DS
= 15V
20V
25V
10
3
10
4
2
3
2
3
5
7
3
5
7
10
0
22
1
571010
2
3573
10
–1
2573
10
2
10
1
2
3
4
5
7
10
3
2
3
4
5
7
10
0
10 10
1
247
2
35 2 4357
t
d(off)
t
d(on)
t
r
t
f
Tc = 25°C
VDS = 10V
Pulse Test
VDS = 10V
Pulse Test
Tc = 25°C
75°C
125°C
Tch = 25°C
f = 1MHz
VGS = 0V
Ciss
Coss
Crss
Tch = 25°C, VDD = 15V
VGS = 10V, RGEN = RGS = 50Ω
Tch = 25°C
ID = 100A
75°C
25°C
Tc = 125°C
VGS = 0V
Pulse Test
FS100UMJ-03F
Rev.1.00, Aug.20.2004, page 5 of 6
Channel Temperature Tch (°C)
Threshold Voltage vs.
Channel Temperature (Typical)
Gate-Source Threshold Voltage VGS(th) (V)
Channel Temperature Tch (°C)
Breakdown Voltage vs.
Channel Temperature (Typical)
On-State Resistance vs.
Channel Temperature (Typical)
Channel Temperature Tch (°C)
Drain-Source On-State Resistance rDS(ON) (t°C)
Drain-Source On-State Resistance rDS(ON) (25°C)
Drain-Source Breakdown Voltage V(BR)DSS (t°C)
Drain-Source Breakdown Voltage V(BR)DSS (25°C)
Transient Thermal Impedance Characteristics
Pulse Width tw (s)
Transient Thermal Impedance Zth(ch-c) (°C/W)
Switching Time Measurement Circuit Switching Waveform
10
–1
10
0
2
3
4
5
7
10
1
2
3
4
5
7
–50 0 50 100 150 0
0.8
1.6
2.4
3.2
4.0
–50 0 50 100 150
0.4
0.6
0.8
1.0
1.2
1.4
–50 0 50 100 150
10
–4
10
1
10
–1
7
5
3
2
10
0
7
5
3
2
7
5
3
2
5327 5327 5327 5327 5327
10
1
10
0
10
–3
10
–2
10
–1
10
–2
Single Pulse
0.5
0.2
0.05
0.01
D = 1.0
0.02
0.1
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
90%
10%
tf
Vin Monitor
D.U.T.
RL
VDD
Vout
Monitor
RGEN
RGS
VGS = 10V
ID = 50A
Pulse Test
VDS = 10V
ID = 1mA
VGS = 0V
ID = 1mA
PDM
tw
D = T
tw
T
FS100UMJ-03F
Rev.1.00, Aug.20.2004, page 6 of 6
Package Dimensions
TO-220
EIAJ Package Code JEDEC Code Mass (g) (reference value) Lead Material
Conforms 2.0 Cu alloyConforms
Symbol Dimension in Millimeters
Min Typ Max
A
A
1
A
2
b
D
E
e
x
y
1
y
ZD
ZE
10.5
16 max
3.8 max
12.5 min
4.5
7.0
1.0
0.8
2.5 2.5
4.5
1.3
0.5 2.6
φ 3.6 ± 0.2
3.2 ± 0.2
Note 1) The dimensional figures indicate representative values unless
otherwise the tolerance is specified.
Order Code
Lead form Standard packing Quantity Standard order code Standard order
code example
Straight type Static electricity prevention bag 100 Type name FS100UMJ-03F
Lead form Plastic Magazine (Tube) 50 Type name – Lead forming code FS100UMJ-03F-A8
Note : Please confirm the specification a bo ut the shipping in detail.
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