© Semiconductor Components Industries, LLC, 2010
September, 2010 Rev. 3
1Publication Order Number:
NTST30100S/D
NTST30100SG,
NTSB30100S-1G
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Exceptionally Low VF = 0.39 V at IF = 5 A
Features
Fine Lithography Trenchbased Schottky Technology for Very Low
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
This is a PbFree Device
Typical Applications
Switching Power Supplies including Notebook / Netbook Adapters,
ATX and Flat Panel Display
High Frequency and DCDC Converters
Freewheeling and ORing diodes
Reverse Battery Protection
Instrumentation
Mechanical Characteristics
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 940 @ 0.125 in
Weight (Approximately): 1.9 grams
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes: 260°C Maximum for
10 sec
1
3
2, 4
http://onsemi.com
TO220AB
CASE 221A
STYLE 6
3
4
12
MARKING
DIAGRAMS
AYWW
TS30100SG
AKA
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
AKA = Polarity Designator
Device Package Shipping
ORDERING INFORMATION
NTST30100SG TO220
(PbFree)
50 Units/Rail
NTSB30100S1G TO262
(PbFree)
50 Units/Rail
I2PAK (TO262)
CASE 418D
STYLE 3
AYWW
TS30100SG
AKA
3
4
12
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
NTST30100SG, NTSB30100S1G
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100 V
Average Rectified Forward Current
(Rated VR, TC = 105°C)
IF(AV) 30 A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC = 95°C)
IFRM 60 A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM 250 A
Operating Junction Temperature TJ40 to +150 °C
Storage Temperature Tstg 65 to +175 °C
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Maximum Thermal Resistance JunctiontoCase
JunctiontoAmbient
RqJC
RqJA
2.0
70
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Rating Symbol Typ Max Unit
Maximum Instantaneous Forward Voltage (Note 1)
(IF = 5 A, TJ = 25°C)
(IF = 10 A, TJ = 25°C)
(IF = 30 A, TJ = 25°C)
(IF = 5 A, TJ = 125°C)
(IF = 10 A, TJ = 125°C)
(IF = 30 A, TJ = 125°C)
vF0.47
0.55
0.84
0.39
0.51
0.7
0.95
0.78
V
Maximum Instantaneous Reverse Current (Note 1)
(VR = 70 V, TJ = 25°C)
(VR = 70 V, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
IR27
11
70
23
1000
45
mA
mA
mA
mA
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%
NTST30100SG, NTSB30100S1G
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Typical Instantaneous Forward
Characteristics
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IF
, INSTANTANEOUS FORWARD
CURRENT (A)
VF
, INSTANTANEOUS FORWARD VOLTAGE (V)
TA = 150°C
TA = 25°C
TA = 125°C
Figure 2. Typical Reverse Characteristics
0.001
0.01
0.1
1
10
100
1000
20 30 40 50 60 70 80 90 100
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
IR, INSTANTANEOUS REVERSE
CURRENT (mA)
TA = 150°C
TA = 25°C
TA = 125°C
Figure 3. Typical Junction Capacitance
100
1000
10000
0.1 1 10 100
VR, REVERSE VOLTAGE (V)
C, JUNCTION CAPACITANCE (pF)
TJ = 25°C
Figure 4. Current Derating, Case
0
5
10
15
20
25
30
35
40
45
50
55
60
0 20 40 60 80 100 120 140
TC, CASE TEMPERATURE (°C)
SQUARE WAVE
dc
RqJC = 2.0°C/W
IF(AV), AVERAGE FORWARD CUR-
RENT (A)
Figure 5. Forward Power Dissipation
0
5
10
15
20
25
30
35
40
45
0 5 10 15 20 25 30
IF(AV), AVERAGE FORWARD CURRENT (A)
PF(AV), AVERAGE FORWARD
POWER DISSIPATION (W)
SQUARE
WAVE
dc
TA = 150°C
IPK/IAV = 5
IPK/IAV = 10
IPK/IAV = 20
NTST30100SG, NTSB30100S1G
http://onsemi.com
4
0.01
0.1
1
10
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
10%
5%
2%
20%
1%
50% Duty Cycle
Single Pulse
t, Pulse Time (sec)
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
Figure 6. Typical Transient Thermal Response, JunctiontoCase
NTST30100SG, NTSB30100S1G
http://onsemi.com
5
PACKAGE DIMENSIONS
TO220
CASE 221A09
ISSUE AF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.014 0.025 0.36 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
T
C
S
T
U
R
J
STYLE 6:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
NTST30100SG, NTSB30100S1G
http://onsemi.com
6
PACKAGE DIMENSIONS
I2PAK (TO262)
CASE 418D01
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
T
W
G
K
A
C
E
V
J
H
123
4
SEATING
PLANE
D3 PL
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.335 0.380 8.51 9.65
B0.380 0.406 9.65 10.31
C0.160 0.185 4.06 4.70
D0.026 0.035 0.66 0.89
E0.045 0.055 1.14 1.40
G0.100 BSC 2.54 BSC
H0.094 0.110 2.39 2.79
J0.013 0.025 0.33 0.64
S0.390 REF 9.90 REF
V0.045 0.070 1.14 1.78
W0.522 0.551 13.25 14.00
B
M
B
M
0.13 (0.005) T
S
F
F0.122 REF 3.10 REF
K0.500 0.562 12.70 14.27
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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Phone: 81357733850
NTST30100S/D
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