Step Recovery Diodes, Multichip SRD ALPHA IND/ SEMICONDUCTOR Features @ Low Transition Time @ High Cutoff Frequency @ High Reliability 4Y8E D MM 0585443 0001366 T18 MMALP and SRD Chips \ Description Alpha Step Recovery Diodes (SRD) are oxide passi- vated, epitaxial silicon mesa designs. Careful attention to diffusion profiles makes these diodes an ideal choice for high order multiplier circuits. They are available in a broad range of packages or in chip form for those who wish to bond SRDs into their own circuits. Also, multichip packaged devices are available for high power applica- tions. Application There are basically four types of multiplier devices in common usage: 1) the resistive multiplier, 2) the varac- tor (square law or tuning diode) multiplier 3) the A-mode multiplier, and 4) the SRD. The resistive multiplier, typically a Schottky diode, is for low order, low power use and has low efficiency. Varactor multipliers are princi- pally used as doublers or upconverters (N=2), while A- mode multiplier diodes are used on N <4 multipliers. The SRD can also be used on N< 4 multipliers, but its main use is in high order (N>4) multipliers and comb genera- tors where high efficiency is required. Alpha has a complete fine of multiplier diodes for each case men- tioned above (consult factory). When an SRD is driven into forward conduction on one half of the RF cycle, the diode stores charge and appears as a low impedance. On the second half of the cycle, the diode conducts until the stored charge is removed and then switches off very rapidly at a speed governed by the transition time, , In general it is desirable that the minority carrier life- time (t) be greater than 10 times the period of the input frequency, while the transition time (T,) should be less than the period of the output frequency. Figures 2 and 3 are graphs which can be used to easily determine the limiting values t and T,. Test circuits to determine t and T, are shown in Figures 4 and 5. For optimum perform- ance an ideal SRD willbe a punch-through device at zero volts (any increase in reverse bias above zero volts will not decrease capacitance) but will have a highly non- linear capacitance increase as the diode is forward biased. In actual practice a step recovery diode will not be zero punch-through but will have C,,/C,,<1.4. This canbeclearly seenin Figure 1. SRDs are highly efficient, and idlers are not needed although, if used, may further increase efficiency. A typical SRD circuit is shown in Figure 6. Law = A-Mode N Capacitance (pF) Step Recovery do al L l L -10 -20 -40 -60-80-100 0 -1 l 1 3 4 Applied Voltage Volts Figure 1. Capacitance vs. Applied Voltage for Square Root Law and A-Mode Multipliers and Step Recovery Diodes 4-68Step Recovery Diodes, Multichip SRD and SRD Chips ALPHA IND/ SEMICONDUCTOR HAE D When higher microwave power is desired, the normal SRD may not be useable, since the necessary break- down voltages may be too high for the transmission time Mm 0585443 000367 954 MBALP7-07-// Absolute Maximum Ratings required. Alpha has solved this problem by using the Parameter Symbols Value Unit multichip approach. The use of two chips provides im- provement in both average power handling and peak Reverse Voltage] V, Same as V, | Volts power handling capability. The chips are electrically in . ; : series and thermally in parallel, giving lower thermal Operating To 65 to +200 C resistance than chips which are in series both electrically P and thermally. Average power is increased because, for a given RF reactance, each chip can have twice the Strage re stg 65 to +200 Cc capacitance of the equivalent single chip device. This P results in a four time increase in total device area and, hence, in average power handling capability. _ 100) | GENERATOR aw oti roy 2008 ron 5 10 . o oom | ae Lo HP 18154 PLUG IN 2 TOR wr woote + Se = g 10-- ov 5 wavenees 1 0} 1 2 . . 2 . OF out Frequ aor in (GHA Figure 4. rat Lifetime, +, Figure 2. tvsF,, 1000 Te I Po wannusn s N TL< al a A artn The 200s o meisa pov IN 8 T Four] HP 2150, t __4 F sagza wee bo ee gt 100, a WV --~--- won: E \ INPUT PULSE Ee oons OUTPUT PULSE = . | Je ta< tos 0 + lt 15 a5 700 Figure 5. Transition Time, T,, Test Set-Up Output Frequency,F out (GHz) Figure 3. T,vsF,,, Output Matching =) Filter Section = Bias Network Low wi Matching 'mpulse Filter Section Generator Input TH Meret fe |= Output Figure 6. Typical SRD Multiplier Circuit 4-69Step Recovery Diodes, Multichip SRD and SRD Chips ALPHA IND/ SEMICONDUCTOR 4WGE D MM 0585443 00013648 890 MALP Step Recovery Diode Chips +. 07- u Typical Typical V,' 3 Ty F., Input Output Type (Volts) c,,? (ns) (ps) (GHz) Freq. Freq. Chip Number Min. (pF) Min. Max. Min. (GHz) (GHz) Style CVB1015-06 0.25-0.50 150-806 CVB1015-12 15 0.50-1.0 10 70 300 0.5-3.0 9.0-18.0 150-801 CVB1015-18 1.0-1.5 150-801 CVB1030-06 0.25-0.50 150-801 CVB1030-12 30 0.50-1.0 10 100 300 0.5-3.0 5.0-15.0 150-801 CVB1030-18 1.0-1.5 150-801 CVB1045-06 0.50-1.0 150-801 CVB1045-12 45 1.0-2.0 25 200 250 .25-1.5 2.0-7.5 150-802 CVB1045-18 2.0-3.0 150-802 Notes: 1. Measured atl, = 10pA. 2, Measured at 1 MHz, V, = 6 volts. 3. Measured atl, = 10mA, I,, = 6MA (see Figure 4). 4. Measured at V, = 10 volts, |, = 10mA (see Figure 5). 5. Measured at F = 1 GHz, V, = 6 volts. 15 Volt' Packaged Diodes Q Pout Fout Type Package Cc, (Cwatt) (dbm) Range Numbers Outline pf Typ. Typ. (GHz) DVB6100-06 023-001 .29-.50 60 23 9-18 DVB6723-01 247-001 .25-.50 160 18 9-18 DVB6100-12 023-001 -50-1.00 40 25 9-18 DVB6723-02 247-001 .50-1.00 140 18 9-18 DVB6145-02 075-001 .50-1.00 700 13 9-18 DVB6100-18 023-001 1.00-1.50 30 26 9-18 DVB6723-03 247-001 1.00-1.50 130 20 9-18 DVB6145-03 075-001 1.00-1.50 700 13 9-18 For alldiodes: t=10nsecmin.* T,=70psecmax. F,, =300 GHz min Efficiency = 10% Multiplier Factor = 10 Notes: 1, Measured at I, = 10pA. 2. Measured at 1 MHz, V, =6 volts. 3. Actual power will depend on the multiplier design. 4, Measured at!,= 10 mA, |, = 6mA (see Figure 4) 5. Measured at V, = 10 volts, |, = 10 mA (see Figure 5). 6. Measured at F = 1 GHz, V, = 6 volts. 7. Efficiency will depend on the actual multiplier design. 8. N is the multiplier factor where Foureu7 = N times Fiyeur- 4-70Step Recovery Diodes, Multichip SRD and SRD Chips m= ALPHA IND/ SEMICONDUCTOR WBE D MM 0585443 0001369 727 MBALPT-07-// 30 Volt Packaged Diodes 6 Pout? Fout Type Package c,,? (Cwatt) (dbm) Range Numbers Outline pf Typ. Typ. (GHz) DVB6101-06 023-001 25-.50 60 23 5-15 DVB6723-04 247-001 25-.50 160 18 5-15 DVB6145-04 075-001 25-.50 700 13 5-15 DVB6101-12 023-001 50-.75 45 25 5-15 DVB6723-05 247-001 50-.75 145 19 5-15 DVB6145-05 075-001 50-.75 700 13 5-15 DVB6101-18 023-001 75-1.00 40 25 5-15 DVB6723-06 247-001 75-1.00 140 19 5-15 DVB6145-06 075-001 .75-1.00 700 13 5-15 DVB6101-24 023-001 1.00-1.25 35 25 5-15 DVB6723-07 247-001 1.00-1.25 135 20 5-15 DVB6145-07 075-001 1.00-1.25 700 13 5-15 DVB6101-30 023-001 1.25-1.50 30 26 5-15 DVB6723-08 247-001 1.25-1.50 130 20 5-15 DVB6145-08 075-001 1.25-1.50 700 13 5-15 For all diodes: t=10nsecmin.* T,=100psecmax. F,,= 300 GHz min Efficiency = 10% Multiplier Factor*= 70 45 Volt' Packaged Diodes 6 Pout Fout Type Package Cc, (Cwatt) (dbm) Range Numbers Outline pf Typ. Typ. (GHz) DVB6102-06 023-001 -50-1.00 50 24 2-7.5 DVB6723-09 247-001 -50-1.00 150 18 2-7.5 DVB6145-09 075-001 -50-1.00 700 13 2-7.5 DVB6102-12 023-001 1.00-1.50 40 25 2-7.5 DVB6723-10 247-001 1.00-1.50 140 20 2-7.5 DVB6145-10 075-001 1.00-1.50 700 13 2-7.5 DVB6102-18 023-001 1.50-2.00 30 26 2-7.5 DVB6723-11 247-001 1.50-2.00 130 22 2-7.5 DVB6145-11 075-001 1.50-2.00 700 13 2-7.5 DVB6102-24 023-001 2.00-3.00 25 27 2-7.5 DVB6723-12 247-001 2.00-3.00 125 22 2-7.5 DVB6145-12 075-001 2.00-3.00 700 13 2-7.5 Efficiency = 10% Multiplier Factor = 10 For all diodes: +=25nsecmin. T,=200 psec max. F,,= 250 GHz min.* Notes: 1. Measured at |, = 10pA. 2. Measured at 1 MHz, V, = 6 volts. 3. Actual power will depend on the multiplier design. 4. Measured atl, = 10 mA, |, = 6mA (see Figure 4) 5. Measured at V, = 10 volts, |, = 10 mA (see Figure 5). 6. Measured at F = 1 GHz, V, = 6 volts. 7. Efficiency will depend on the actual multiplier design. 8. Nis the multiplier factor where F..,,.,, = N times F,,..4,- 471Step Recovery Diodes, Multichip SRD and SRD Chips ALPHA IND/ SEMICONDUCTOR 48E D MM 0585443 G001370 449 MB ALP 7-07-// . 60 Volt' Packaged Diodes 8 Pout Fout Type Package C,, (Cwatt) (dbm) Range Numbers Outline pf Typ. Typ. (GHz) DVB6103-06 023-001 -50-1.00 30 34 1.3-4 DVB6723-13 247-001 .50-1.00 130 31 1.3-4 DVB6145-13 075-001 .50-1.00 700 18 1.3-4 DVB6103-12 023-001 1.00-1.50 25 35 1.3-4 DVB6723-14 247-001 1.00-1.50 125 31 1.3-4 DVB6145-14 075-001 1.00-1.50 700 18 1.3-4 DVB6103-18 023-001 1,50-2.00 20 36 1.3-4 DVB6723-15 247-001 1.50-2.00 120 31 1.3-4 DVB6145-15 075-001 1.50-2.00 700 18 1.3-4 DVB6103-24 023-001 2.00-3.00 15 37 1.3-4 DVB6723-16 247-001 2.00-3.00 115 32 1.3-4 DVB6145-16 075-001 2.00-3.00 700 18 1.3-4 For all diodes: += 60 nsec min. 75 Volt' Packaged Diodes T,= 300 psecmax. F,, = 150 GHz min. Efficiency = 40% Multiplier Factor? = 5 6 Pout? Fout Type Package c., (Cwatt) (dbm) Range Numbers Outline pf Typ. Typ. (GHz) DVB6104-06 023-001 1.50-3.50 15 37 75-3 DVB6723-17 247-001 1.50-3.50 115 32 75-3 DVB6145-17 075-001 1.50-3.50 700 18 75-3 DVB6104-12 023-001 3.50-5.50 15 37 75-3 DVB6723-18 247-001 3.50-5.50 115 32 75-3 DVB6145-18 075-001 3.50-5.50 700 18 75-3 DVB6104-18 023-001 5.50-7.50 10 39 75-3 DVB6723-19 247-001 5.50-7.50 110 32 75-3 DVB6145-19 075-001 7.50-10.00 10 39 75-3 DVB6104-24 023-001 7.50-10.00 110 32 75-3 For all diodes: += 100 nsec min. Notes: T,= 400 psec*max. F,,= 125 GHz min. Efficiency = 40% Multiplier Factor = 5 Measured at |, = 10,A. Measured at 1 MHz, V, = 6 volts. Actual power will depend on the multiplier design. Measured at |, = 10 mA, |, = 6mA (see Figure 4) Measured at V, = 10 volts, |, = 10 mA (see Figyre 5). Measured at F = 1 GHz, V, = 6 volts. Efficiency will depend on the actual multiplier design. N is the multiplier factor where F,,,,,.,; = N times F,.,..,,,- PNOAAE OP 4-72Step Recovery Diodes, Multichip SRD and SRD Chips ALPHA IND/ SEMICONDUCTOR HSE D MM 0585443 0001371 385 MBALP 7-07-14 2 Chip - 023-001 Package Typical | Typical | Available 0 t/ 6th F., Input Output | Output Type V,' C,, (ns) (ps) | (C/Watt) | (GHz) Freq. Freq. Power Numbers (Volts) pt Min. Max. Min. Min. (GHz) (GHz) (dom) DVB6850-06 30 .25-.50 10 80 35 250 0.5-3.0 | 9.0-18.0 27 DVB6850-12 30 .50-1.00 10 80 25 250 0.5-3.0 9.0-18.0 29 DVB6850-18 30 1.00-1.50 10 80 20 250 0.5-3.0 | 9.0-18.0 30 DVB6851-06 60 .25-.50 10 100 35 250 0.5-3.0 | 5.0-15.0 27 DVB6851-12 60 .50-1.00 10 100 25 250 0.5-3.0 5.0-15.0 29 DVB6851-18 60 1.00-1.50 10 100 20 250 0.5-3.0 5.0-15.0 30 DVB6852-06 90 .05-1.00 25 200 30 225 .25-1.50 2.0-7.5 28 DVB6852-12 90 1.00-1.50 25 200 25 225 .25-1.50 2.0-7.5 29 DVB6852-18 90 1.50-2.00 25 200 20 225 .25-1.50 2.0-7.5 30 Conversion Efficiency: 40% Typical Multiplication Factor: N=5 2 Chip - 017-001 Package Typical | Typical | Available 3 t! 6th F,,, Input Output | Output Type V,' C,, (ns) (ps) | (C/Watt) | (GHz) Freq. Freq. Power Numbers (Volts) pf Min. Max. Min. Min. (GHz) (GHz (dbm) DVB6860-06 90 .50-1.00 25 250 30 225 .25-1.5 2.0-6.0 35 DVB6860-12 90 1.00-1.50 25 250 25 225 .25-1.5 2.0-6.0 37 DVB6860-18 90 1.50-2.00 25 250 20 225 .25-1.5 2.0-6.0 38 DVB6861-06 120 .05-1.00 60 350 18 125 0.1-1.0 1.2-4.0 38 DVB6861-12 120 1.00-1.50 60 350 16 125 0.1-1.0 1.2-4.0 39 DVB6861-18 120 1.50-2.00 60 350 12 125 0.1-1.0 1.2-4.0 40 DVB6862-06 150 1.50-3.50 100 450 10 100 0.5-7.5 .75-2.5 41 DVB6862-12 150 3.50-5.50 100 450 10 100 0.5-7.5 75-2.5 41 Conversion Efficiency: 40% Typical Multiplication Factor: N=5 3 Chip - 017-001 Package Typical | Typical | Available 3 t;' oth F.. Input Output | Output Type V," C,, (ns) (ps) | (C/Watt) | (GHz) Freq. Freq. Power Numbers (Volts) pf Min. Max. Min. Min. (GHz) (GHz (dbm) DVB6870-06 135 .05-1.00 25 300 20 220 .25-1.5 1.5-5.0 38 DVB6870-12 135 1.00-1.50 25 300 15 220 .25-1.5 1.5-5.0 39 DVB6870-18 135 1.50-2.00 25 300 10 220 25-1.5 1.5-5.0 41 DVB6871-06 180 .05-1.00 60 400 10 120 0.1-1.0 1.0-3.0 41 DVB6871-12 180 1.00-1.50 60 400 8 120 0.1-1.0 1.0-3.0 46 DVB6871-18 180 1.50-2.00 60 400 6 120 0.1-1.0 1.0-3.0 49 DVB6872-06 225 1.50-3.50 100 500 7 100 0.5-7.5 75-25 47 DVB6872-12 225 3.50-5.50 100 500 6 100 0.5-7.5 .75-2.5 49 Conversion Efficiency: 40% Typical* Multiplication Factor: N=5 Notes: Measured at |, = 10pA. Measured at 1 MHz, V, = 6 voits. Measured at |, = 10mA, |, = 6mA (see Figure 4). Measured at V,, = 10 volts, |, = 10mA (see Figure 5). Measured at F = 1 GHz, V, =6 volts. Actual power and efficiency will depend on the multiplier design. N is the multiplier factor where F., .4, = N times F,,.,,,. NOOO =