MMBT4403 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features * * * Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT4401) Ideal for Medium Power Amplification and Switching SOT-23 Dim Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.50 D 0.89 1.05 E 0.45 0.61 G G 1.78 2.05 H H 2.65 3.05 J 0.013 0.15 A C TOP VIEW B C Mechanical Data * * * * * E B Case: SOT-23, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: K2T, R2T Weight: 0.008 grams (approx.) D E M K J L K 0.89 1.10 L 0.45 0.61 M 0.076 0.178 All Dimensions in mm Maximum Ratings @ TA = 25C unless otherwise specified Characteristic Symbol MMBT4403 Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous (Note 1) IC -600 mA Power Dissipation (Note 1) Pd 350 mW RqJA 357 K/W Tj, TSTG -55 to +150 C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Note: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width 300ms, duty cycle 2%. DS30058 Rev. A-2 1 of 2 MMBT4403 Electrical Characteristics Characteristic @ TA = 25C unless otherwise specified Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -40 3/4 V Collector-Emitter Breakdown Voltage V(BR)CEO -40 3/4 V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 3/4 V IE = -100mA, IC = 0 ICEX 3/4 -100 nA VCE = -35V, VEB(OFF) = -0.4V IBL 3/4 -100 nA VCE = -35V, VEB(OFF) = -0.4V hFE 30 60 100 100 20 3/4 3/4 3/4 300 3/4 Collector-Emitter Saturation Voltage VCE(SAT) 3/4 -0.40 -0.75 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA Base- Emitter Saturation Voltage VBE(SAT) -0.75 3/4 -0.95 -1.30 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA Output Capacitance Ccb 3/4 8.5 pF VCB = -10V, f = 1.0MHz, IE = 0 Input Capacitance Ceb 3/4 30 pF VEB = -0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.5 15 kW Voltage Feedback Ratio hre 0.1 8.0 x 10-4 Small Signal Current Gain hfe 60 500 3/4 Output Admittance hoe 1.0 100 mS fT 200 3/4 MHz Delay Time td 3/4 15 ns Rise Time tr 3/4 20 ns Storage Time ts 3/4 225 ns Fall Time tf 3/4 30 ns OFF CHARACTERISTICS (Note 2) Collector Cutoff Current Base Cutoff Current IC = -100mA, IE = 0 ON CHARACTERISTICS (Note 2) DC Current Gain 3/4 IC = -100A, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -150mA, VCE = IC = -500mA, VCE = -1.0V -1.0V -1.0V -2.0V -2.0V SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product VCE = -10V, IC = -1.0mA, f = 1.0kHz VCE = -10V, IC = -20mA, f = 100MHz SWITCHING CHARACTERISTICS Note: VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width 300ms, duty cycle 2%. DS30058 Rev. A-2 2 of 2 MMBT4403