DS30058 Rev. A-2 1 of 2 MMBT4403
MMBT4403
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
·Epitaxial Planar Die Construction
·Complementary NPN Type Available
(MMBT4401)
·Ideal for Medium Power Amplification and
Switching
Characteristic Symbol MMBT4403 Unit
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -40 V
Emitter-Base Voltage VEBO -5.0 V
Collector Current - Continuous (Note 1) IC-600 mA
Power Dissipation (Note 1) Pd350 mW
Thermal Resistance, Junction to Ambient (Note 1) RqJA 357 K/W
Operating and Storage and Temperature Range Tj,T
STG -55 to +150 °C
Features
Maximum Ratings @ TA= 25°C unless otherwise specified
A
E
J
L
M
BC
H
G
D
K
TOP VIEW
C
E
B
Mechanical Data
·Case: SOT-23, Molded Plastic
·Terminals: Solderable per MIL-STD-202,
Method 208
·Terminal Connections: See Diagram
·Marking: K2T, R2T
·Weight: 0.008 grams (approx.)
SOT-23
Dim Min Max
A0.37 0.51
B1.19 1.40
C2.10 2.50
D0.89 1.05
E0.45 0.61
G1.78 2.05
H2.65 3.05
J0.013 0.15
K0.89 1.10
L0.45 0.61
M0.076 0.178
All Dimensions in mm
Note: 1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width £300ms, duty cycle £2%.
DS30058 Rev. A-2 2 of 2 MMBT4403
Electrical Characteristics @ TA= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage V(BR)CBO -40 ¾VIC= -100mA, IE= 0
Collector-Emitter Breakdown Voltage V(BR)CEO -40 ¾VIC= -1.0mA, IB= 0
Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ¾VIE= -100mA, IC= 0
Collector Cutoff Current ICEX ¾-100 nA VCE = -35V, VEB(OFF) = -0.4V
Base Cutoff Current IBL ¾-100 nA VCE = -35V, VEB(OFF) = -0.4V
ON CHARACTERISTICS (Note 2)
DC Current Gain hFE
30
60
100
100
20
¾
¾
¾
300
¾
¾
IC= -100µA, VCE = -1.0V
IC= -1.0mA, VCE = -1.0V
IC= -10mA, VCE = -1.0V
IC= -150mA, VCE = -2.0V
IC= -500mA, VCE = -2.0V
Collector-Emitter Saturation Voltage VCE(SAT) ¾-0.40
-0.75 VIC= -150mA, IB= -15mA
IC= -500mA, IB= -50mA
Base- Emitter Saturation Voltage VBE(SAT) -0.75
¾
-0.95
-1.30 VIC= -150mA, IB= -15mA
IC= -500mA, IB= -50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Ccb ¾8.5 pF VCB = -10V, f = 1.0MHz, IE= 0
Input Capacitance Ceb ¾30 pF VEB = -0.5V, f = 1.0MHz, IC= 0
Input Impedance hie 1.5 15 kW
VCE = -10V, IC= -1.0mA,
f = 1.0kHz
Voltage Feedback Ratio hre 0.1 8.0 x 10-4
Small Signal Current Gain hfe 60 500 ¾
Output Admittance hoe 1.0 100 mS
Current Gain-Bandwidth Product fT200 ¾MHz VCE = -10V, IC= -20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time td¾15 ns VCC = -30V, IC= -150mA,
VBE(off) = -2.0V, IB1 = -15mA
Rise Time tr¾20 ns
Storage Time ts¾225 ns VCC = -30V, IC= -150mA,
IB1 = IB2 = -15mA
Fall Time tf¾30 ns
Note: 1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width £300ms, duty cycle £2%.
