Document Number: 88525 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 20-Oct-09 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
Schottky Barrier Rectifier
1N5817 thru 1N5819
Vishay General Semiconductor
FEATURES
• Guardring for overvoltage protection
• Very small conduction losses
• Extremely fast switching
• Low forward voltage drop
• High frequency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, dc-to-dc converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-204AL (DO-41)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
PRIMARY CHARACTERISTICS
IF(AV) 1.0 A
VRRM 20 V, 30 V, 40 V
IFSM 25 A
VF0.45 V, 0.55 V, 0.60 V
TJ max. 125 °C
DO-204AL (DO-41)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL 1N5817 1N5818 1N5819 UNIT
Maximum repetitive peak reverse voltage VRRM 20 30 40 V
Maximum RMS voltage VRMS 14 21 28 V
Maximum DC blocking voltage VDC 20 30 40 V
Maximum non-repetitive peak reverse voltage VRSM 24 36 48 V
Maximum average forward rectified current
at 0.375" (9.5 mm) lead length at TL = 90 °C IF(AV) 1.0 A
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load IFSM 25 A
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Operating junction and storage temperature range TJ, TSTG - 65 to + 125 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL 1N5817 1N5818 1N5819 UNIT
Maximum instantaneous forward voltage 1.0 VF (1) 0.450 0.550 0.600 V
Maximum instantaneous forward voltage 3.1 VF (1) 0.750 0.875 0.900 V
Maximum average reverse current
at rated DC blocking voltage
TA = 25 °C IR (1) 1.0 mA
TA = 100 °C 10
Typical junction capacitance 4.0 V, 1.0 MHz CJ 125 110 pF
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88525
2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 20-Oct-09
1N5817 thru 1N5819
Vishay General Semiconductor
Note
(1) Thermal resistance from junction to lead vertical P.C.B. mounted, 0.375" (9.5 mm) lead length with 1.5" x 1.5" (38 mm x 38 mm) copper pads
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL 1N5817 1N5818 1N5819 UNIT
Typical thermal resistance
RθJA (1) 50
°C/W
RθJL (1) 15
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
1N5819-E3/54 0.332 54 5500 13" diameter paper tape and reel
1N5819-E3/73 0.332 73 3000 Ammo pack packaging
0
0.25
0.5
0.75
040 6020 80 100 120 140
1.0
Average Forward Current (A)
Case Temperature (°C)
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
110 100
0
5
10
15
20
25
30
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
Instantaneous Forward Current (A)
100
10
1
0.1
0.01
Instantaneous Forward Voltage (V)
0 0.40.2 1.20.80.6 1.4 1.61.0
TJ = 125 °C
TJ = 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
Instantaneous Reverse Current (mA)
1
10
100
0.01
0.001
0.1
200 10040 60 80
Percent of Rated Peak Reverse Voltage (%)
T
J
= 125 °C
T
J
= 25 °C
T
J
= 75 °C
Document Number: 88525 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 20-Oct-09 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
1N5817 thru 1N5819
Vishay General Semiconductor
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Junction Capacitance
Fig. 7 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Junction Capacitance (pF)
101 100
100
1000
10
0.1
Reverse Voltage (V)
1N5817
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Junction Capacitance (pF)
101 100
100
1000
10
0.1
Reverse Voltage (V)
1N5818 and 1N5819
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
0.01 101 100
10
100
0.1
0.1
1
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
DO-204AL (DO-41)
0.107 (2.7)
0.080 (2.0)
DIA.
0.034 (0.86)
0.028 (0.71)
DIA.
1.0 (25.4)
MIN.
1.0 (25.4)
MIN.
0.205 (5.2)
0.160 (4.1)
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Revision: 12-Mar-12 1Document Number: 91000
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