SUPERTEX INC OL pe garzseis ooo1sa4 3 T + 35 - US =. ee Teen 7) Supertex inc. cue 7 R531 Preliminary N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BV es / Foson) loon) Order Number / Package BVigs (max) (min) 70-39 TO-92 60V 0.180 12.04 IRF531 R531 Features Advanced DMOS Technology (1 Freedom from secondary breakdown These enhancement-mode (normally-off) power transistors util- . , ize a vertical DMOS structure and Supertex's well-proven silicon- C1 Low power drive requirement gate manufacturing process. This combination produces devices OO Ease of paralleling with the power handling capabilities of bipolar transistors and with st the high input impedance and negative temperature coefficient D1 Low Cigg and fast switching speeds inherent in MOS devices. Characteristic of all MOS structures, 0 Excellent thermal stability these devices are free from thermal runaway and thermally- Integral Source-Drain diode induced secondary breakdown. woes : : . Supertex Vertical DMOS Power FETs are ideally suited to a wide 1) High input impedance and high gain range of switching and amplifying applications where high break- down voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Package Options 1 Motor control O Converters O Ampiifiers O Switches O Power supply circuits Drivers (Relays, Hammers, Solenoids, Lamps, avs Memories, Displays, Bipolar Transistors, etc. 0-92 isplays, Pipe } With TO-220 SD snoud Ay: (lead bend ~y option: P11) [| Absolute Maximum Ratings i Drain-to-Source Voltage BVoss Gps Gps JO-92 TO-22 Drain-to-Gate Voltage BV pcs no Gate-to-Source Voltage +20V Operating and Storage Temperatura -55G to +150C Soldering Temperature* 300C *Distance of 1.6 mm from casa for 10 seconds. 8-15 wee ee ee et oe oe ae enSSUPERTEX INC on ve srzsess ooorsas s BD + Thermal Characteristics Breen 7- 35-25 Package | |, (continuous)* 1, (pulsed)* Power Dissipation Ge Oe @T, = 25C ae CiwW IRF531 14.0A 56.0A 75W 80 3.12 14.0A 56.0A . R531 1.5A 15,0A 1wW 170 125 1.5A 15.0A tp (continuous) is limited by max rated T,. ' Electrical Characteristics (@ 25C unless otherwise specified) (Notes 4 and 2) Symbol Parameter Min Typ Max Unit Conditions BV nes Drain-to-Source Breakdown Voltage 60 Vv Vgg = 9, |, = 250A Vesimny Gate Threshold Voltage 2.0 4.0 V Veg = Vos: Ip = 250HA less Gate Body Leakage 500 nA Veg = #20V, Vos = 9 loss Zero Gate Voltage Drain Current 250 Veg =9 Vos = Max Rating 7000 HA Ves = 0; Vpg = 0.8 Max Rating T, = 125C Inorg ON-State Drain Current 12.0 A Vgg = 10V Vos > lyon X Pogiony Max Rating Rosion) Static Drain-to-Source 0.18 Q Vag = 10V, ty = 8.0A ON-State Resistance Gye Forward Transconductance Vos > lprony Rosco Max Rating 40 6 {p= 8.0A Css Input Capacitance 800 Coss Common Source Output Capacitance 500 pF v5 v0 Vps = 25V Cass Reverse Transfer Capacitance 150 tuon Turn-ON Delay Time 30 V. = 05BV t Rise Time 75 ns | 8p 40A oss tuorr Tum-OFF Delay Time 40 Veg - 0.8 Max Rating t Fall Time 45 Vep Diode Forward Voltage Drop 2.5 Vag = OV, Igg = 1A za | Vee = OV, Igy = BA t, Reverse Recovery Time 360 ns T, = 150C, |, = 8.0A, dle = 100A/US Note 1: AILD.C. parameters 100% tested al 25C unless otherwise stated. (Pulse test: 300s pulsa, 2% duty cycle.) Note 2: All A.C. parameters sample tested. Switching Waveforms and Test Circuit / Y. 90% (nput 10%} \ SCOPE (ON) (OFF) D.U.T. ta(ON) , tr ta(OFF), tt Output oo Te 10% \ i, 10% so%\. 90% 8-16