DATA SH EET
Product specification
File under Discrete Semiconductors, SC14 September1995
DISCRETE SEMICONDUCTORS
BFS17A
NPN 3 GHz wideband transistor
September1995 2
Philips Semiconductors Product specification
NPN 3 GHz wideband transistor BFS17A
DESCRIPTION
NPN transistor in a plastic SOT23 package.
APPLICATIONS
•It is intended for RF applications such as oscillators
in TV tuners.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector Fig.1 SOT23.
Marking code: E2p.
handbook, halfpage
MSB003
Top view
12
3
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note to the Quick reference data and the Limiting values
1. Ts is the temperature at the soldering point of the collector pin.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCBO collector-base voltage open emitter −25 V
VCEO collector-emitter voltage open base −15 V
ICDC collector current −25 mA
Ptot total power dissipation up to Ts=70°C; note 1 −300 mW
fTtransition frequency IC= 25 mA; VCE = 5 V; f = 500 MHz;
Tamb =25°C2.8 −GHz
GUM maximum unilateral power gain IC= 14 mA; VCE = 10 V; f = 800 MHz 13.5 −dB
F noise figure IC= 2 mA; VCE = 5 V; f = 800 MHz;
Tamb =25°C2.5 −dB
VOoutput voltage dim =−60 dB; IC= 14 mA; VCE =10V;
R
L=75Ω; Tamb =25°C;
f(p+q−r) = 793.25 MHz
150 −mV
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter −25 V
VCEO collector-emitter voltage open base −15 V
VEBO emitter-base voltage open collector −2.5 V
ICDC collector current −25 mA
ICM peak collector current −50 mA
Ptot total power dissipation up to Ts=70°C; note 1 −300 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
September1995 3
Philips Semiconductors Product specification
NPN 3 GHz wideband transistor BFS17A
THERMAL CHARACTERISTICS
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj=25°C unless otherwise specified.
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and dB.
2. dim =−60 dB (DIN 45004B); IC= 14 mA; VCE = 10 V; RL=75Ω; Tamb =25°C;
Vp=V
O
; fp= 795.25 MHz;
Vq=V
O−6 dB; fq= 803.25 MHz;
Vr=V
O−6 dB; fr= 805.25 MHz;
measured at f(p+q−r) = 793.25 MHz.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to soldering point up to Ts=70°C; note 1 260 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE= 0; VCB =10V −−50 nA
hFE DC current gain IC= 2 mA; VCE =1V; T
amb =25°C25 90 −
I
C
= 25 mA; VCE =1V; T
amb =25°C25 90 −
f
Ttransition frequency IC= 25 mA; VCE = 5 V; f = 500 MHz;
Tamb =25°C−2.8 −GHz
Cccollector capacitance IE= 0; VCB = 10 V; f = 1 MHz;
Tamb =25°C−0.7 −pF
Ceemitter capacitance IC= 0; VEB = 0.5 V; f = 1 MHz −1.25 −pF
Cre feedback capacitance IC= 0; VCE =5V; f=1MHz −0.6 −pF
GUM maximum unilateral power gain
note 1 IC= 14 mA; VCE = 10 V; f = 800 MHz −13.5 −dB
F noise figure IC= 2 mA; VCE =5V; Z
S=60Ω;
f = 800 MHz; Tamb =25°C−2.5 −dB
VOoutput voltage note 2 −150 −mV
GUM 10 log S21 2
1S
11 2
–
1S
22 2
–
--------------------------------------------------------------
=
September1995 4
Philips Semiconductors Product specification
NPN 3 GHz wideband transistor BFS17A
Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit.
L1=L3=5µH Ferroxcube choke.
L2 = 3 turns 0.4 mm copper wire; winding pitch 1 mm; internal diameter 3 mm.
handbook, full pagewidth
MBB251
18 Ω
1.5 nF
10 kΩL2
L1
1 nF
75 Ω
input
270 Ω
1 nF
L3
1.5 nF
1 nF
0.68 pF
3.3 pF
DUT
75 Ω
output
VCC
VBB
Fig.3 DC current gain as a function of
collector current.
VCE = 1 V; Tamb =25°C.
handbook, halfpage
0
100
50
010 30
MEA395
20 IC (mA)
hFE
Fig.4 Collector capacitance as a function of
collector-base voltage.
IE= 0; f = 1 MHz; Tamb =25°C.
handbook, halfpage
MEA903
0
1
0.5
04 8 12 16
VCB (V)
Cc
(pF)
September1995 5
Philips Semiconductors Product specification
NPN 3 GHz wideband transistor BFS17A
Fig.5 Transition frequency as a function of
collector current.
VCE = 5 V; f = 500 MHz; Tamb =25°C.
handbook, halfpage
MEA904
0
0
1
2
3
4
20 40
IC (mA)
fT
(GHz)
Fig.6 Minimum noise figure as a function of
collector current.
VCE = 5 V; Zs=60Ω; f = 800 MHz; Tamb =25°C.
handbook, halfpage
MEA902
0
5
0
1
2
3
4
10 20
F
(dB)
IC (mA)
September1995 6
Philips Semiconductors Product specification
NPN 3 GHz wideband transistor BFS17A
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Fig.7 SOT23.
Dimensions in mm.
handbook, full pagewidth
MBC846
10
max
o
10
max
o
30
max
o
1.1
max
0.55
0.45
0.150
0.090
0.1
max
21
3
M0.1 AB
0.48
0.38
TOP VIEW
1.4
1.2 2.5
max
3.0
2.8
M
0.2 A
A
B
0.95
1.9
