2SC1384 - Transys Electronics - Datasheet.Directory

TO-92L Plastic-Encapsulate Transistors

2SC1383 TRANSISTOR (NPN)

2SC1384

FEATURE

Power dissipation

PCM: 1 W (Tamb=25℃)

Collector current

ICM: 1 A

Collector-base voltage

V(BR)CBO: 2SC1383: 30 V

2SC1384: 50 V

Operating and storage junction temperature range

TJ, T stg: -55℃ to +150 ℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN MAX UNIT

Collector-base breakdown voltage 2SC1383

2SC1384 V(BR)CBO Ic= 10µA , IE=0 30

50 V

Collector-emitter breakdown voltage 2SC1383

2SC1384 V(BR)CEO I

C=2mA , IB=0 25

50 V

E mitter-base breakdow n volt age V(BR)EBO IE= 10µA, IC=0 5 V

Collector cut-off current ICBO V

CB=20V , IE=0 0.1

µA

hFE(1) V

CE=10 V, IC= 500mA 85 340

DC current gain hFE(2) V

CE=5 V, IC= 1A 50

Collector-emitter saturat i on vol tage VCE(sat) I

C= 500m A, IB=50mA 0.4 V

Base-emitter satu ration voltage VBE(sat) I

C= 500mA , IB= 50mA 1.2 V

Transition frequency f T VCE= 10 V, IC= 50 mA 100 MHz

CLASSIFICATION OF hFE(1)

Rank Q R S

Range 85-170 120-240 170-340

1 2 3

TO-92L

1. E MITTER

2. COLLECTOR

3. BASE

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