BAV99BDWPT
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
FAST SWITCHING DIODE ARRAY
VOLTAGE 75 Volts CURRENT 215 mAmpere
APPLICATION
FEATURE
* Small surface mounting type. (SC-88/SOT-363)
* High speed. (TRR=1.5nSec Typ.)
* Suitable for high packing density.
CONSTRUCTION
CIRCUIT
* Silicon epitaxial planar
* Ultra high speed switching
* For general purpose switching application
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
NOTES :
2004-8
Maximum Average Reverse Current
CHARACTERISTICS SYMBOL UNITS
Volts
Maximum Instantaneous Forward Voltage
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
RATINGS
Maximum Non-Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum Repetitive Peak Reverse and DC Blocking Voltage
Maximum Average Forward Rectified Current
Non-Repetitive Peak Forward Surge Current
Typical Junction Capacitance between Terminal (Note 1)
Maximum Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient (Note 3)
SYMBOL
VRM
VRMS
VRRM, VDC
IO
CJ
R JA
VF
0.715
0.855
1.00
1.25
IR
25
2.5
30
50
@IF=1.0mA
@IF=10mA
@IF=50mA
@IF=150mA
@VR=20V
@VR=75V
@VR=25V, TJ=150OC
@VR=75V, TJ=150OC
nAmps
uAmps
uAmps
uAmps
TJ,TSTG
IFSM 2.0
1.0
BAV99BDWPT
BAV99BDWPT
UNITS
100
Volts
Volts
Volts
mAmps
53
75
215
2.0
625
-65 to +150
Amps
pF
Maximum Reverse Recovery Time (Note 2) TRR 4.0 nSec
oC/W
oC
1.Measured at 1.0 MHZ and applied reverse voltage of 0 volts.
2. Measured at applied froward current of 10mA and reverse current of 10mA.
3. Device mounted on FR-4 by 1 inch X 0.85 inch X 0.062 inch
4. ESD sensitive product handling required.
* Maximum total power disspation is 300mW.
* Peak forward current is 350mA.
@t=1.0uSec
@t=1.0Sec
Dimensions in millimeters
SC-88/SOT-363
SC-88/SOT-363
0.7±0.1
0.9±0.1
0.15±0.05
0~0.1
2.1±0.1
0.1 Min.
0.65
0.65
1.3±0.1 2.0±0.2
0.2± 1.25±0.1
0.1
0.05
(1)
(3)
(6)
(4)
1 3
6 4
MARKING
DN
RATING CHARACTERISTIC CURVES ( BAV99BDWPT )
0
0
125
100
75
50
25
25 50 75 100 125 150
AMBIENT TEMPERATURE, (
o
C
)
AVERAGE FORWARD CURRENT, (%)
0
1
2
5
10
20
50
100
200
500
0.2 0.4 0.6 0.8 1.0 1.2
1.4 1.6
FORWARD CURRENT, (mA)
FORWARD VOLTAGE, (V)
FIG. 2 - FORWARD CHARACTERISTICS
REVERSE CURRENT, (nA)
REVERSE VOLTAGE, (V)
FIG. 4 - REVERSE CHARACTERISTICS
100
1u
10u
10
0.1
1
2010 30 40 80706050
0
0
0
4
2
2 4 6 8 10 12 14 16
f=1MHz
JUNCTION CAPACITANCE, (pF)
REVERSE VOLTAGE, (V)
18 20
FIG. 3 - TYPICAL JUNCTION CAPACITANCE
75
o
C
50
o
C
Ta=100
o
C
0
o
C
25
o
C
-
25
o
C
0
0
10
9
8
7
6
5
4
3
2
1
10987654321
VR=6V
REVERSE RECOVERY TIME, (nS)
FORWARD CURRENT, (mA)
FIG. 5 - REVERSE RECOVERY TIME
PULSE GENERATOR
OUTPUT 50 SAMPLING
OSCILLOSCOPE
50
0.01µF D.U.T.
5
FIG. 6 - REVERSE RECOVERY TIME MEASUREMENT CIRCUIT
FIG. 1 - TYPICAL FORWARD CURRENT
DERAING CURVE
50
o
C
Ta=85
o
C
25
o
C
-
30
o
C
0
o
C
