MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Power Bipolar Transistors Designed for broadband commercial and industrial applications at frequen- cies from 1400 to 1600 MHz. The high gain and broadband performance of these devices makes them ideal for large-signal, common-emitter class A and class AB amplifier applications in 26 volt amplitude modulated and multi-carrier base station equipment. Guaranteed Two-Tone Performance at 1490 MHz, 26 Volts Output Power 60 Watts (PEP) Power Gain 10 dB Efficiency 33% Characterized with Series Equivalent LargeSignal Impedance Parameters e S~Parameter Characterization at High Bias Levels e Excellent Thermal Stability e All Gold Metal for Ultra Reliability e Capable of Handling 3:1 VSWR @ 26 Vdc, 1490 MHz, 60 Watts (PEP) Output Power MRF15060 MRF15060S 60 W, 1.49 GHz RF POWER BIPOLAR TRANSISTORS CASE 451-04, STYLE 1 (MRF15060) CASE 451A-01, STYLE 1 (MRF15060S) MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VcEO 25 Vdc Collector-Emitter Voltage Voces 60 Vde Emitter-Base Voltage Veso 60 Adc Collector Current ~ Continuous lc 8 Adc Total Device Dissipation @ Tc = 70C Po 185 Watts Derate above 70C 1.43 WPrC Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature Ty 200 C THERMAL CHARACTERISTICS Rating Symbol Max Unit Thermal Resistance, Junction to Case Reuc 0.7 C MRF15060 MRF15060S 4.2-684 MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS DEVICE DATAELECTRICAL CHARACTERISTICS (Tc; = 25C unless otherwise noted) | Characteristic OFF CHARACTERISTICS Symbol Typ Unit Collector-Emitter Breakdown Voltage (I = 50 mAdc, Ig = 0) ViBr)ceo 25 Vde Collector-Emitter Breakdown Voltage (I = 50 mAdc, Veg = 0) ViBR)CES 60 Vde Emitter-Base Breakdown Voltage (Ig = 10 mAdg, Io = 0 MAdc) V(BR)EBO 3.5 Vde Collector Cutoff Current (VcE = 30 Vde, VBE = 0} Ices mAdc ON CHARACTERISTICS DC Current Gain (Ig = 1 Ade, Voge = 5 Vde) hee 20 40 80 DYNAMIC CHARACTERISTICS Output Capacitance (Vcg = 26 Vde, Ie = 0, f = 1.0 MHz) (1) 55 pF FUNCTIONAL TESTS (in Motorola Test Circuit. See Figure 1) CommonEmitter Amplifier Power Gain (Voc = 26 Vdc, Pout = 60 Watts (PEP), Icg = 200 mA, fy = 1490.0 MHz, fo = 1490.1 MHz) dB Collector Efficiency (Voc = 26 Vdc, Pout = 60 Watts (PEP), Icq = 200 mA, f; = 1490.0 MHz, fg = 1490.1 MHz) 33 38 dB 3rd Order Intermodutation Distortion (Voc = 26 Ve, Poyt = 60 Watts (PEP), log = 200 mA, f, = 1490,0 MHz, f2 = 1490.1 MHz) IMD -32 - 28 dB Input Return Loss (Voc = 26 Vde, Pout = 60 Watts (PEP), Icq = 200 mA, f, = 1490.0 MHz, fz = 1490.1 MHz) IRL 12 20 dB Output Mismatch Stress (Voc = 26 Vdc, Pout = 60 Watts (PEP), Icg = 200 mA, fy = 1490.0 MHz, fo = 1490.1 MHz, VSWR = 3:1, at All Phase Angles) No Degradation in Output Power NOTE: For information only. This part is collector matched. MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS DEVICE DATA MRF15060 MRF15060S 4.2-685TL4 OUTPUT C2 Bi, B2 Short RF Bead Fair Rite-2743019447 D1 Diode, 1N4003 C1, C2, C6, C8 18 pF, Chip Capacitor L1,L2 3 Turns, 20 AWG, IDIA 0.102 (17.7 nH) C3 3.9 pF, Chip Capacitor at Transistor, NPN BD135 C4, C5 0.6-4.5 pF, Variable Capacitor Q2 Transistor, PNP BD136 C7, C9 100 pF, Chip Capacitor Rt 120 Q, 1/4 W Resistor C10, C13 1000 pF, Chip Capacitor R2 51 Q, 1/4 W, Chip Resistor C11, 14, C17 0.1 pF, 50 Vde Ceramic Capacitor R3, R4 4x 39 Q, 1/8 W Chip Resistors C12, C15, C18 10 pF, 50 Vde Electrolytic Capacitor TLI-TL4 Microstrip Line See Photomaster C16 250 uF, 50 Vdc Electrolytic Capacitor Board 1/32 Glass Teflon, Arion GX-0300-55~22, = 2.55 Figure 1. MRF15060 RF Test Fixture Schematic MRF15060 MRF15060S MOTOROLA WIRELESS SEMICONDUCTOR 4.2-686 SOLUTIONS DEVICE DATATYPICAL CHARACTERISTICS 12.5 ao a E 12 E = _ = g 2 5 sg & 5 2 5 E gE 2 S = eS n 2 oe Vog = 26 Vee e leq = 200 mA f = 1490.0 MHz 10.5 0 1 2 3 4 5 6 7 Pin, INPUT POWER (WATTS) Figure 2. Output Power & Power Gain versus Input Power a 3 3 E 3rd g 5 z s- Sth Order 3 = 3 & 3 a z Vog = 26 Vde S ww lca = 200 mA 2 7th Order fy = 1490.0 MHz g fo = 1490.1 MHz 0 10 20 30 40 50 60 70 Pout, OUTPUT POWER (WATTS) PEP Figure 4, Intermodulation Distortion versus Output Power g Ss =z 9 5 g a log = 100 mA z S LU 3 S 200 g 3 | 2 400 mA @ g & Ww 600 mA Voc = 26 Vde Zz f, = 1490.0 MHz 3 fy = 1490.1 MHz 0.1 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Intermodulation Distortion versus Output Power 80 70) Pin = 5 W 60 50 40 30 Voc = 26 Vde log = 200 mA 20 Single Tone 3 0 1400 1420 1440 1460 1480 1500 1520 1540 1560 1580 1600 f, FREQUENCY (MHz) Figure 3. Output Power versus Frequency 14 10 13 15 Boe > mee 12 | 20 11 25 IMD a 71 ~~ Z ir a 30 gf 'ca=200mA fl = 1490.0 MHz 85 f2 = 1490.1 MHz a 40 18 20 22 24 26 28 30 Voc, SUPPLY VOLTAGE (Vde) Figure 5. Power Gain and intermodulation Distortion versus Supply Voltage Voc = 26 Vde f, = 1490.0 MHz fo = 1490.1 MHz 8 Of 1 10 100 Poy, OUTPUT POWER (WATTS) PEP Figure 7. Power Gain versus Output Power IMD, INTERMODULATION DISTORTION (dBc) MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS DEVICE DATA MRF15060 MRF15060S 4.2-687Gpe, POWER GAIN (dB) 8 1425 1450 1475 VSWR 1500 f, FREQUENCY (MHz) Figure 8. Performance in Broadband Circuit Ig, COLLECTOR CURRENT (Adc) Voc = 26 Vde cq = 200 mA 8 45 = 3 Ss a & 400 = hE e 5 3 30 5 clos 2 Pout = 60 W (PEP) S45 3 Sh 29 02 b 2. - S15 10 1625 1550 15 20 8 a nm Tiange = 76C Thange = 100C 4 8 12 16 20 Voge, COLLECTOR SUPPLY VOLTAGE (Vdc) 24 Figure 10. OC Safe Operating Area 3rd ORDER re = = z = 2 4 XS =< Ww x a es) FUNDAMENTAL Vog = 28 Vdc Ig=3A fy = 1490.0 MHz fp = 1490.1 MHz 30 35 Pin, INPUT POWER (dBm) 40 45 Figure 9. Class A Third Order intercept Point 28 50 MRF15060 MRF15060S 4.2-688 MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS DEVICE DATAVoc = 26 Vie, log = 200 mA, Pag = 60 Watts PEP f Zin(1) Zou" MHz Ohms Ohms 1400 1.07 +j3.4 . 2.25 + j3.1 1450 1.04 + j3.0 2.37 + j2.4 1500 4.01 +j2.7 2.46 + j2.1 1550 0.99 + j2.3 2.54+4)1.4 1600 0.97 + j1.9 2.66 + j1.0 Zin(1} = Conjugate of fixture base impedance. Zo. = Figure 11. Series Equivatent Input and Output Impedence Conjugate of the optimum load impedance at given output power, voltage, bias current and frequency. MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS DEVICE DATA MRF15060 MRF15060SO oe oeoco oo 8 oe Oo 8 6 ooo oo co 080080 eoocoo oc oc 0o00e0 0 ooo 0 C4 Oe! cs O O MRFI5060 O Figure 12. MRF15060 Component Parts Layout Table 1. Typical Common Emitter S-Parameters (Vcc = 26 V) Ip=3.0A f Su Sat S12 S22 MHz ISq41 Zo ISaq! zo IS2t Zo (Saal Zo 1000 0.964 163 0.28 93 0.018 73 0.991 178 1050 0.958 162 0.30 87 0.018 76 0.989 178 1100 0.957 161 0.31 82 0.017 81 0.987 179 1150 0.956 160 0.34 76 0.022 73 0.982 179 1200 0.955 158 0.38 70 0.023 67 0.969 179 1250 0.953 157 0.42 62 0.022 57 0.956 180 1300 0.941 155 0.47 53 0.019 60 0.937 180 1350 0.922 154 0.55 43 0.015 64 0.915 -180 1400 0.920 153 0.67 28 0.013 66 0.891 -180 1450 0.901 152 0.80 6 0.012 71 0.880 -180 1500 0.903 151 0.83 +24 0.007 76 0.911 -179 1550 0.906 152 0.70 -54 0.008 89 0.954 -180 1600 0.913 153 0.51 -75 0.008 92 0.971 -180 1650 0.921 154 0.38 -89 0.010 95 0.973 -179 1700 0.946 154 0.29 -98 0.012 97 0.974 -179 1750 0.974 155 0.34 -107 0.014 105 0.976 -178 1800 0.968 154 0.19 115 0.016 116 0.977 -178 1850 0.966 153 0.16 121 0.018 138 0.978 -177 1900 0.947 152 0.14 -128 0.021 143 0.980 -177 1950 0.918 151 0.12 -138 0.027 151 0.982 -177 2000 0.912 150 0.09 -146 0.031 159 0.985 -176 MRF15060 MRF15060S MOTOROLA WIRELESS SEMICONDUCTOR 4.2-690 SOLUTIONS DEVICE DATA