AP2128K-4.2TRG1 - BCD Semiconductor Manufacturing Limited

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128

Data Sheet

Sept. 2010 Rev. 2.0 BCD Semiconductor Manufacturing Limited

Figure 1. Package Type of AP2128

SOT-23-5

General Description

The AP2128 series are positive voltage regulator ICs

fabricated by CMOS process. The AP2128 provides

two kinds of output voltage operation modes for

setting the output voltage. Fixed output voltage mode

senses the output voltage on VOUT, adjustable output

voltage mode needs two resistors as a voltage divider.

The AP2128 series have features of low dropout

voltage, low noise, high output voltage accuracy, and

low current consumption which make them ideal for

use in various battery-powered devices.

AP2128 have 1.0V, 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V,

3.3V, 3.9V, 4.2V, 4.75V, 5.2V fixed voltage versions

and 0.8V to 5.5V adjustable voltage version.

AP2128 series are available in SOT-23-5 package.

Features

·Wide Operating Voltage: 2.5V to 6V

·Low Dropout Voltage:170mV@300mA for

VOUT=3.3V, 140mV@300mA for VOUT=5.2V

·High Output Voltage Accuracy: ±2%

·High Ripple Rejection:

68dB@ f=1kHz, 54dB@ f=10kHz

·Low Standby Current: 0.1µA

·Low Quiescent Current: 60µA Typical

·Low Output Noise: 60µVrms@VOUT=0.8V

·Short Current Limit: 50mA

·Over Temperature Protection

·Compatible with Low ESR Ceramic Capacitor:

1µF for CIN and COUT

·Excellent Line/Load Regulation

·Soft Start Time: 50µs

·Auto Discharge Resistance: RDS(ON)=60Ω

Applications

·Datacom

·Notebook Computers

·Mother Board

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128

Data Sheet

Sept. 2010 Rev. 2.0 BCD Semiconductor Manufacturing Limited

Shutdown

Figure 2. Pin Configuration of AP2128 (Top View)

Pin Configuration

K Package

(SOT-23-5)

VIN

GND

VOUT

ADJ/NC

Functional Block Diagram

Fixed Version

SHUTDOWN

GND

VIN

VOUT

Shutdown

and

Logic Control

Current Limint

And

Thermal

Protection

MOS Driver

VREF

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128

Data Sheet

Sept. 2010 Rev. 2.0 BCD Semiconductor Manufacturing Limited

Functional Block Diagram (Continued)

Figure 3. Functional Block Diagram of AP2128

Adjustable Version

Shutdown

and

Logic Control

Current Limint

And

Thermal

Protection

MOS Driver

VREF

SHUTDOWN

GND

VIN

VOUT

ADJ

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128

Data Sheet

Sept. 2010 Rev. 2.0 BCD Semiconductor Manufacturing Limited

BCD Semiconductor's products, as designated with "G1" suffix in the part number, are RoHS compliant and Green.

Ordering Information

Circuit Type

Package

K: SOT-23-5

AP2128 -

TR: Tape and Reel

ADJ: ADJ Output

G1: Green

1.0: Fixed Output 1.0V

1.2: Fixed Output 1.2V

1.5: Fixed Output 1.5V

1.8: Fixed Output 1.8V

2.5: Fixed Output 2.5V

2.8: Fixed Output 2.8V

3.3: Fixed Output 3.3V

4.2: Fixed Output 4.2V

4.75: Fixed Output 4.75V

5.2: Fixed Output 5.2V

Product Package Temperature

Range Part Number Marking ID Packing Type

AP2128 SOT-23-5 -40 to 85oC

AP2128K- ADJTRG1 FAD Tape & Reel

AP2128K-1.0TRG1 FAJ Tape & Reel

AP2128K-1.2TRG1 FAK Tape & Reel

AP2128K-1.5TRG1 GAN Tape & Reel

AP2128K-1.8TRG1 GAP Tape & Reel

AP2128K-2.5TRG1 GAQ Tape & Reel

AP2128K-2.8TRG1 GAR Tape & Reel

AP2128K-3.0TRG1 GAW Tape & Reel

AP2128K-3.3TRG1 FAL Tape & Reel

AP2128K-3.9TRG1 GBU Tape & Reel

AP2128K-4.2TRG1 GAZ Tape & Reel

AP2128K-4.75TRG1 GFZ Tape & Reel

AP2128K-5.2TRG1 GAV Tape & Reel

3.0: Fixed Output 3.0V

3.9: Fixed Output 3.9V

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128

Data Sheet

Sept. 2010 Rev. 2.0 BCD Semiconductor Manufacturing Limited

Parameter Symbol Value Unit

Input Voltage VIN 6.5 V

Shutdown Input Voltage VCE -0.3 to VIN+0.3 V

Output Current IOUT 450 mA

Junction Temperature TJ150 oC

Storage Temperature Range TSTG -65 to 150 oC

Lead Temperature (Soldering, 10sec) TLEAD 260 oC

Thermal Resistance θ

JA 250 oC/W

ESD (Human Body Model) ESD 6000 V

ESD (Machine Model) ESD 200 V

Absolute Maximum Ratings (Note 1)

Parameter Symbol Min Max Unit

Input Voltage VIN 2.5 6 V

Operating Ambient Temperature Range TA -40 85 oC

Recommended Operating Conditions

Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.

These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated

under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods

may affect device reliability.

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128

Data Sheet

Sept. 2010 Rev. 2.0 BCD Semiconductor Manufacturing Limited

Electrical Characteristics

(AP2128-ADJ, VIN min=2.5V, CIN=1µF, COUT=1µF,

Bold typeface applies over

-40

≤

unless otherwise specified.)

Parameter Symbol Conditions Min Typ Max Unit

Reference Voltage VREF

VIN=2.5V

1mA≤IOUT≤300mA 0.784 0.8 0.816 V

Input Voltage VIN 2.5 6 V

Maximum Output Current IOUT(MAX)

VIN=2.5V,

VOUT=98%×VOUT

300 400 mA

Current Limit ILIMIT VIN=2.5V 450 mA

Load Regulation ∆VOUT

/(∆IOUT*VOUT)

VIN=2.5V,

1mA≤IOUT≤300mA 0.6 %/A

Line Regulation ∆VOUT

/(∆VIN*VOUT)

VIN=2.5V to 6V

IOUT=30mA 0.06 %/V

Quiescent Current IQVIN=2.5V, IOUT=0mA 60 90 µA

Standby Current ISTD

VIN=2.5V,

VSHUTDOWN in off mode 0.1 1.0 µA

Power Supply

Rejection Ratio PSRR Ripple 1Vp-p

VIN=3V

f=100Hz 68 dB

f=1KHz 68 dB

f=10KHz 54 dB

Output Voltage

Temperature Coefficient

(∆VOUT/VOUT)

/∆TIOUT=30mA,

-40

≤

±100 ppm/oC

Short Current Limit ISHORT VOUT=0V 50 mA

Soft Start Time tUP 50 µs

RMS Output Noise VNOISE TA=25oC, 10Hz ≤f≤100kHz,

VOUT=0.8V

60 µVrms

Shutdown "High" Voltage Shutdown input voltage "High" 1.5 6 V

Shutdown "Low" Voltage Shutdown input voltage "Low" 0 0.4 V

VOUT Discharge MOSFET

RDS(ON)

Shutdown input voltage "Low" 60 Ω

Shutdown Pull Down Resis-

tance 3MΩ

Thermal Shutdown 165 oC

Thermal Shutdown Hysteresis 30 oC

Thermal Resistance θJC SOT-23-5 150 oC/W

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128

Data Sheet

Sept. 2010 Rev. 2.0 BCD Semiconductor Manufacturing Limited

Parameter Symbol Conditions Min Typ Max Unit

Output Voltage VOUT VIN=2.5V

1mA≤IOUT≤300mA

98%×

VOUT

102%×

VOUT

Input Voltage VIN 2.5 6 V

Maximum Output Current IOUT(MAX)

VIN=2.5V,

VOUT=98%×VOUT

300 400 mA

Current Limit ILIMIT VIN=2.5V 450 mA

Load Regulation ∆VOUT

/(∆IOUT*VOUT)

VIN=2.5V,

1mA≤IOUT≤300mA 0.6 %/A

Line Regulation ∆VOUT

/(∆VIN*VOUT)

VIN=2.5V to 6V

IOUT=30mA 0.06 %/V

Dropout Voltage VDROP

VOUT=1.0V, IOUT=300mA 1400 1500

VOUT=1.2V, IOUT=300mA 1200 1300

VOUT=1.5V, IOUT=300mA 900 1000

VOUT=1.8V, IOUT=300mA 600 700

Quiescent Current IQVIN=2.5V, IOUT=0mA 60 90 µA

Standby Current ISTD

VIN=2.5V,

VSHUTDOWN in off mode 0.1 1.0 µA

Power Supply

Rejection Ratio PSRR Ripple 1Vp-p

VIN=3V

f=100Hz 68 dB

f=1KHz 68 dB

f=10KHz 54 dB

Output Voltage

Temperature Coefficient

(∆VOUT/VOUT)

/∆TIOUT=30mA,

-40

≤

±100 ppm/oC

Short Current Limit ISHORT VOUT=0V 50 mA

Soft Start Time tUP 50 µs

Shutdown "High" Voltage Shutdown input voltage "High" 1.5 6 V

Shutdown "Low" Voltage Shutdown input voltage "Low" 0 0.4 V

VOUT Discharge MOSFET

RDS(ON)

Shutdown input voltage "Low" 60 Ω

Shutdown Pull Down Resis-

tance 3MΩ

Thermal Shutdown 165 oC

Thermal Shutdown Hysteresis 30 oC

Thermal Resistance θJC SOT-23-5 150 oC/W

(AP2128-1.0V/1.2V/1.5V/1.8V, VINmin.=2.5V, CIN=1µF, COUT=1µF,

Bold typeface applies over

-40

≤

unless oth-

erwise specified.)

Electrical Characteristics (Continued)

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128

Data Sheet

Sept. 2010 Rev. 2.0 BCD Semiconductor Manufacturing Limited

Parameter Symbol Conditions Min Typ Max Unit

Output Voltage VOUT

VIN=VOUT+1V

1mA≤IOUT≤300mA

98%×

VOUT 102%×

VOUT V

Input Voltage VIN 2.5 6 V

Maximum Output Current IOUT(MAX)

VIN-VOUT=1V,

VOUT=98%×VOUT

300 400 mA

Current Limit ILIMIT VIN-VOUT=1V 450 mA

Load Regulation ∆VOUT

/(∆IOUT*VOUT)

VIN-VOUT=1V,

1mA≤IOUT≤300mA 0.6 %/A

Line Regulation ∆VOUT

/(∆VIN*VOUT)

VOUT+0.5V≤VIN≤6V,

IOUT=30mA 0.06 %/V

Dropout Voltage VDROP

VOUT=2.5V, 2.8V, 3.0V, 3.3V,

3.9V, 4.2V, IOUT=300mA 170 300

VOUT=4.75V and 5.2V,

IOUT=300mA 140 300

Quiescent Current IQVIN=VOUT+1V, IOUT=0mA 60 90 µA

Standby Current ISTD

VIN=VOUT+1V,

VSHUTDOWN in off mode 0.1 1.0 µA

Power Supply

Rejection Ratio PSRR

AP2128-2.5V to

4.2V, Ripple

1Vp-p

VIN=VOUT+1V

f=100Hz 68

f=1KHz 68

f=10KHz 54

AP2128-4.75V ,

Ripple 0.5Vp-p

VIN=VOUT+1V

f=100Hz 63

f=1KHz 63

f=10KHz 45

AP2128-5.2V ,

Ripple 0.5Vp-p

VIN=6V

f=100Hz 63

f=1KHz 63

f=10KHz 45

Output Voltage

Temperature Coefficient

(∆VOUT/VOUT)

/∆TIOUT=30mA,

-40

≤

±100 ppm/oC

Short Current Limit ISHORT VOUT=0V 50 mA

(AP2128-2.5V/2.8V/3.0V/3.3V/3.9V/4.2V/4.75V, VIN=VOUT+1V; AP2128-5.2V, VIN=6V, CIN=1µF, COUT=1µF,

Bold type-

face applies over

-40

≤

unless otherwise specified.)

Electrical Characteristics (Continued)

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128

Data Sheet

Sept. 2010 Rev. 2.0 BCD Semiconductor Manufacturing Limited

(AP2128-2.5V/2.8V/3.0V/3.3V/3.9V/4.2V/4.75V, VIN=VOUT+1V; AP2128-5.2V, VIN=6V, CIN=1µF, COUT=1µF,

Bold type-

face applies over

-40

≤

unless otherwise specified.)

Electrical Characteristics (Continued)

Parameter Symbol Conditions Min Typ Max Unit

Soft Start Time tUP 50 µs

Shutdown "High" Voltage Shutdown input voltage "High" 1.5 6 V

Shutdown "Low" Voltage Shutdown input voltage "Low" 0 0.4 V

VOUT Discharge MOSFET

RDS(ON)

Shutdown input voltage "Low" 60 Ω

Shutdown Pull Down Resis-

tance 3MΩ

Thermal Shutdown 165 oC

Thermal Shutdown Hysteresis 30 oC

Thermal Resistance θJC SOT-23-5 150 oC/W

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128

Data Sheet

Sept. 2010 Rev. 2.0 BCD Semiconductor Manufacturing Limited

Figure 4. Output Voltage vs. Output Current

0 50 100 150 200 250 300 350 400 450 500

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

Output Voltage (V)

Output Current (mA)

TC=-40oC

TC=25oC

TC=125oC

VIN=4.4V

0 100 200 300 400 500

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

Output Voltge (V)

Output Current (V)

Tc=-40oC

Tc=25oC

Tc=85oC

VIN=2.5V, VOUT=0.8V

0.00.10.20.30.40.5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

Output Voltage (V)

Output Current (A)

VIN=3.8V

VIN=4.3V

VIN=6V

TC=250C, VOUT=3.3V

0.0 0.1 0.2 0.3 0.4 0.5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

Output Voltage (V)

Output Current (A)

TC=-40oC

TC=25oC

TC=85oC

VIN=6V, VOUT=5.2V

Figure 5. Output Voltage vs. Output Current

Figure 6. Output Voltage vs. Output Current Figure 7. Output Voltage vs. Output Current

Typical Performance Characteristics

0.0 0.1 0.2 0.3 0.4 0.5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

Output Voltage (V)

Output Current (A)

TC=-40oC

TC=25oC

TC=85oC

VIN=4.3V, VOUT=3.3V

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128

Data Sheet

Sept. 2010 Rev. 2.0 BCD Semiconductor Manufacturing Limited

Typical Performance Characteristics (Continued)

Figure 11. Dropout Voltage vs. Case Temperature

Figure 8. Dropout Voltage vs. Output Current

50 100 150 200 250 300

100

120

140

160

180

200

220

240

Dropout Voltage (mV)

Output Current (mA)

TC=-40oC

TC=25oC

TC=85oC

VOUT=3.3V

0.00 0.05 0.10 0.15 0.20 0.25 0.30

100

120

140

160

180

Dropout Voltage (mV)

Output Current (A)

TC=-40oC

TC=25oC

TC=85oC

VIN=6V, VOUT=5.2V

-40-200 20406080

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

Dropout Voltage (V)

Case Temperature (oC)

IOUT=10mA

IOUT=150mA

IOUT=300mA

VIN=4.3V, VOUT=3.3V

-40-200 20406080

100

110

120

130

140

150

160

Dropout Voltage (mV)

Case Temperature (oC)

IOUT=10mA

IOUT=150mA

IOUT=300mA

VIN=6V, VOUT=5.2V

Figure 9. Dropout Voltage vs. Output Current

Figure 10. Dropout Voltage vs. Case Temperature

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128

Data Sheet

Sept. 2010 Rev. 2.0 BCD Semiconductor Manufacturing Limited

Figure 12. Quiescent Current vs. Output Current

0 50 100 150 200 250 300

100

105

110

115

120

Quiescent Current (µA)

Output Current (mA)

TC=-40oC

TC=25oC

TC=85oC

VIN=2.5V, VOUT=0.8V

-40-20 0 20406080100120

Quiescent Current (µA)

Case Temperature (oC)

IOUT=0

VIN=2.5V, VOUT=0.8V

Figure 15. Quiescent Current vs. Case Temperature

Typical Performance Characteristics (Continued)

0 50 100 150 200 250 300

100

105

110

115

Quiescent Current (µA)

Output Current (mA)

TC=-40oC

TC=25oC

TC=85oC

VIN=4.3V, VOUT=3.3V

0.00 0.05 0.10 0.15 0.20 0.25 0.30

100

105

110

115

Quiescent Current (µA)

Output Current (A)

TC=-40oC

TC=25oC

TC=85oC

VIN=6V, VOUT=5.2V

Figure 13. Quiescent Current vs. Output Current

Figure 14. Quiescent Current vs. Output Current

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128

Data Sheet

Sept. 2010 Rev. 2.0 BCD Semiconductor Manufacturing Limited

-40-20 0 20406080100120

Quiescent Current (µA)

Case Temperature (oC)

IOUT=0

VIN=4.3V, VOUT=3.3V

Figure 18. Quiescent Current vs. Input Voltage

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

Quiescent Current (µA)

Input Voltage (V)

TC=25oC

IOUT=0, VOUT=0.8V

0123456

Quiescent Current (µA)

Input Voltage (V)

TC=25oC

IOUT=0, VOUT=3.3V

Figure 16. Quiescent Current vs. Case Temperature Figure 17. Quiescent Current vs. Case Temperature

Figure 19. Quiescent Current vs. Input Voltage

Typical Performance Characteristics (Continued)

-40-20 0 20406080100120

Quiescent Current (µA)

Case Temperature (oC)

IOUT=0

VIN=6V, VOUT=5.2V

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128

Data Sheet

Sept. 2010 Rev. 2.0 BCD Semiconductor Manufacturing Limited

-40-200 20406080100120

0.801

0.802

0.803

0.804

0.805

0.806

0.807

Output Voltage (V)

Case Temperature (oC)

VIN=2.5V, CIN=COUT=1µF

IOUT=10mA, VOUT=0.8V

Typical Performance Characteristics (Continued)

Figure 20. Quiescent Current vs. Input Voltage Figure 21. Output Voltage vs. Case Temperature

Figure 22. Output Voltage vs. Case Temperature Figure 23. Output Voltage vs. Case Temperature

0123456

Quiescent Current (µA)

Input Voltage (V)

TC=25oC

IOUT=0, VOUT=5.2V

-40 -20 0 20 40 60 80 100 120

3.326

3.328

3.330

3.332

3.334

3.336

3.338

3.340

3.342

3.344

3.346

3.348

Output Voltage (V)

Case Temperature (oC)

IOUT=10mA

VIN=4.3V, VOUT=3.3V

-40-20 0 20406080100120

5.195

5.200

5.205

5.210

5.215

5.220

5.225

5.230

5.235

5.240

5.245

5.250

Output Voltage (V)

Case Temperature (oC)

IOUT=10mA

VIN=6V, VOUT=5.2V

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128

Data Sheet

Sept. 2010 Rev. 2.0 BCD Semiconductor Manufacturing Limited

Typical Performance Characteristics (Continued)

012345678

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

Output Voltge (V)

Input Voltage (V)

TC=-40oC

TC=25oC

TC=85oC

VOUT=0.8V

Figure 26. Output Voltage vs. Input Voltage (IOUT=0mA) Figure 27. Output Voltage vs. Input Voltage (IOUT=300mA)

0123456

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

Output Voltge (V)

Input Voltage (V)

TC=-40oC

TC=25oC

TC=85oC

VOUT=0.8V

-40-20 0 20406080100120

Short Current (mA)

Case Temperature (oC)

VIN=6V, VOUT=5.2V

Figure 25. Short Current vs. Case TemperatureFigure 24. Short Current vs. Case Temperature

-40-20 0 20406080100120

Short Current (mA)

Case Temperature (oC)

VIN=2.5V, VOUT=0.8V, CIN=COUT=1µF

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128

Data Sheet

Sept. 2010 Rev. 2.0 BCD Semiconductor Manufacturing Limited

Typical Performance Characteristics (Continued)

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

Output Voltage (V)

Input Voltage (V)

TC=-40oC

TC=25oC

TC=85oC

IOUT=0, VOUT=3.3V

Figure 28. Output Voltage vs. Input Voltage

0123456

Output Voltage (V)

Input Voltage (V)

TC=-40oC

TC=25oC

TC=85oC

IOUT=0, VOUT=5.2V

Figure 30. Power Dissipation vs. Case Temperature

-40 -20 0 20 40 60 80 100 120

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Power Dissipation (W)

Case Temperature (oC)

VOUT=0.8V

No heatsink

Figure 31. Load Transient

(Conditions: CIN=COUT=1µF, V IN=2.5V, VOUT=0.8V,

IOUT

VOUT

Figure 29. Output Voltage vs. Input Voltage

IOUT=10mA to 300mA)

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128

Data Sheet

Sept. 2010 Rev. 2.0 BCD Semiconductor Manufacturing Limited

Typical Performance Characteristics (Continued)

Figure 32. Load Transient

(Conditions: CIN=COUT=1µF, V IN=4.4V, VOUT=3.3V

VOUT

Figure 33. Line Transient

(Conditions: IOUT=30mA, CIN=COUT=1µF,

VIN=2.5 to 3.5V, VOUT=0.8V)

VIN

VOUT

IOUT

Figure 34. Line Transient

(Conditions: IOUT=30mA, CIN=COUT=1µF,

VIN=4 to 5V, VOUT=3.3V)

VIN

VOUT

Figure 35. Soft Start Time

(Conditions: IOUT=0mA, CIN=COUT=1µF,

VShutdown=0 to 2V, VOUT=3.3V)

VOUT

VShutdown

IOUT=10mA to 300mA)

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128

Data Sheet

Sept. 2010 Rev. 2.0 BCD Semiconductor Manufacturing Limited

100 1000 10000 100000

100

PSRR (dB)

Frequency (Hz)

IOUT=10mA

IOUT=300mA

ripple=1Vpp, COUT=1µF, VOUT=0.8V

Typical Performance Characteristics (Continued)

Figure 36. Soft Start Time

(Conditions: IOUT=0mA, CIN=COUT=1µF,

VShutdown=0 to 2V, VOUT=0.8V)

VOUT

VShutdown

Figure 37. PSRR vs. Frequency

Figure 38. PSRR vs. Frequency

100 1000 10000 100000

100

PSRR (dB)

Frequency (Hz)

IOUT=10mA

IOUT=300mA

ripple=1Vpp, COUT=1µF, VOUT=3.3V

Figure 39. PSRR vs. Frequency

100 1k 10k 100k

PSRR (dB)

Frequency (Hz)

IOUT=10mA

IOUT=300mA

VOUT=5.2V, COUT=1µF, ripple=0.5Vpp

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128

Data Sheet

Sept. 2010 Rev. 2.0 BCD Semiconductor Manufacturing Limited

Typical Application

VOUT=0.8(1+R1/R2) V

VOUT=1.0V to 5.2V

Figure 40. Typical Application of AP2128

VIN

VIN VOUT

VOUT

Shutdown

GND

COUT

1µF

CIN

1µF

AP2128

VIN

VIN VOUT

VOUT

ADJShutdown

GND

COUT

1µF

CIN

1µF

AP2128

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128

Data Sheet

Sept. 2010 Rev. 2.0 BCD Semiconductor Manufacturing Limited

Mechanical Dimensions

SOT-23-5 Unit: mm(inch)

2.820(0.111)

2.650(0.104)

1.500(0.059)

0.000(0.000)

0.300(0.012)

0.950(0.037)

0.900(0.035)

0.100(0.004)

0.200(0.008)

0.300(0.012)

8°

0°

3.020(0.119)

1.700(0.067)

2.950(0.116)

0.400(0.016)

0.150(0.006)

1.300(0.051)

0.200(0.008)

0.600(0.024)

1.800(0.071)

2.000(0.079)

0.700(0.028)

REF

TYP

1.450(0.057)

MAX

IMPORTANT NOTICE

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-

cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility fo r use of any its products for any

particular purpose, nor does BCD Semiconductor Man ufacturing Limited assume any liability arising out of the application or use

of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or

other rights nor the rights of others.

- Wafer Fab

Shanghai SIM-BCD Semiconductor Manufacturing Limited

800, Yi Shan Road, Shanghai 200233, China

Tel: +86-21-6485 1491, Fax: +86-21-5450 0008

BCD Semiconductor Manufacturing Limited

MAIN SITE

REGIONAL SALES OFFICE

Shenzhen Office

Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office

Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office

Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China

Tel: +86-755-8826 7951

Fax: +86-755-8826 7865

Taiwan Office

BCD Semiconductor (Taiwan) Company Limited

4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,

Taiwan

Tel: +886-2-2656 2808

Fax: +886-2-2656 2806

USA Office

BCD Semiconductor Corporation

30920 Huntwood Ave. Hayward,

CA 94544, U.S.A

Tel : +1-510-324-2988

Fax: +1-510-324-2788

- IC Design Group

Advanced Analog Circuits (Shanghai) Corporation

8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China

Tel: +86-21-6495 9539, Fax: +86-21-6485 9673

BCD Semiconductor Manufacturing Limited

http://www.bcdsemi.com

BCD Semiconductor Manufacturing Limited

IMPORTANT NOTICE

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-

cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any

particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use

of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or

other rights nor the rights of others.

- Wafer Fab

Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.

800 Yi Shan Road, Shanghai 200233, China

Tel: +86-21-6485 1491, Fax: +86-21-5450 0008

MAIN SITE

REGIONAL SALES OFFICE

Shenzhen Office

Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office

Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,

China

Tel: +86-755-8826 7951

Fax: +86-755-8826 7865

Taiwan Office

BCD Semiconductor (Taiwan) Company Limited

4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,

Taiwan

Tel: +886-2-2656 2808

Fax: +886-2-2656 2806

USA Office

BCD Semiconductor Corp.

30920 Huntwood Ave. Hayward,

CA 94544, USA

Tel : +1-510-324-2988

Fax: +1-510-324-2788

- Headquarters

BCD Semiconductor Manufacturing Limited

No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China

Tel: +86-21-24162266, Fax: +86-21-24162277