WBFBP-06C
(2×2×0.5)
unit: mm
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Plastic-Encapsulate Diode
FBAS40TW
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
DESCRIPTION
Silicon epitaxial planar
PN Junction Guard Ring for Schottky Diode
FEATURES
z Low Forward Voltage Drop
z Fast Switching
z Ultra-Small Surface Mount Package
APPLICATION
For General Purpose Switching Applications, rectifiers
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
FBAS40TW
Marking:K43
Maximum Ratings @TA=25℃
Parameter Symbol Limits Unit
Peak Repetitive reverse voltage
DC Blocking Vo ltage
VRM
VR 40 V
Aver age Rectified Ou tput Current IO 40 mA
Power Dissipation Pd 150 mW
Thermal Resistance. Junction to Ambient Air RθJA 625
℃/W
Junction temperature TJ 125
℃
Storage temperature range TSTG -65-125
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Reverse voltage leakage current IR V
R=30V 200 nA
Forward voltage VF IF=1mA
IF=40mA
380
1000
mV
Total capacitance CT V
R=0,f=1MHz 5
pF
Reverse recovery time t r r IF= IR=10mA,Irr=0.1×IR,
RL=100Ω
5
nS
1
Typical Characteristics
Min. Max. Min. Max.
A 0.450 0.550 0.018 0.022
A1 0.000 0.100 0.000 0.004
b 0.150 0.250 0.006 0.010
D 1.900 2.100 0.075 0.083
E 1.900 2.100 0.075 0.083
D1
E1
e
L
k
z
0. 017 REF.
0. 500 R EF. 0. 020 R EF.
Symbol Dimensions In Millimeters Dimensions In Inches
0. 650 TYP. 0. 026 TYP.
0. 420 R EF. 0. 017 R EF.
0. 420 R EF.
0. 400 R EF. 0. 016 R EF.
0. 300 R EF. 0. 012 R EF.
APPLICATION CIRCUITS
Bridge rectifiers
