MICROWAVE POWER GaN HEMT TGI1314-25L FEATURES BROAD BAND INTERNALLY MATCHED HEMT HIGH POWER Pout= 44.0dBm at Pin= 39.0dBm HIGH GAIN GL= 8.0dB at 13.75GHz to 14.5GHz LOW INTERMODULATION DISTORTION IM3(Min,)= -25dBc at Pout= 37.0dBm Single Carrier Level HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power SYMBOL ( Ta= 25C ) CONDITIONS Pout Drain Current IDS1 Power Added Efficiency add Gate Currrent IgRF VDS= 24V IDSset= 1.0A f =13.75 to 14.5GHz @Pin= 39dBm @Pin= 20dBm Linear Gain GL Gain Flatness 3rd Order Intermodulation Distortion G IM3 Drain Current IDS2 Two tone test Po= 37.0dBm, f= 5MHz (Single Carrier Level) Tch (VDS X IDS + Pin - Pout) X Rth(c-c) Channel Temperature Rise UNIT MIN. TYP. MAX. dBm 43.0 44.0 A 2.5 3.0 % 29 mA -20 +50 dB 7.0 8.0 dB 0.8 dBc -25 A 1.75 2.25 C 110 140 UNIT MIN. TYP. MAX. S 2.25 V -1.0 -4.0 -6.0 A 9.0 V -10 C/W 2.8 3.2 Recommended Gate Resistance(Rg): 13.3 ELECTRICAL CHARACTERISTICS CHARACTERISTICS ( Ta= 25C ) SYMBOL CONDITIONS Saturated Drain Current IDSS VDS= 5V IDS= 2.5A VDS= 5V IDS= 11.5mA VDS= 5V VGS= 0V Gate-Source Breakdown Voltage VGSO IGS= -5mA Transconductance Pinch-off Voltage Thermal Resistance gm VGSoff Rth(c-c) Channel to Case The information contained herein is presented as guidance for product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of product. No license to any intellectual property right is granted by this document. The information contained herein is subject to change without prior notice. It is advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Copyright (c) 2016 TOSHIBA CORPORATION, All Rights Reserved. 3_20160329_No1284 Page: 1/8 MICROWAVE POWER GaN HEMT TGI1314-25L ABSOLUTE MAXIMUM RATINGS CHARACTERISTICS ( Ta= 25C ) SYMBOL UNIT RATING Drain-Source Voltage VDS V 50 Gate-Source Voltage VGS V -10 Drain Current IDS A 7.5 Total Power Dissipation (Tc= 25C) PT W 70 Channel Temperature Tch C 250 Storage Temperature Tstg C -65 to +175 PACKAGE OUTLINE (7-AA07A) Unit in mm Gate Source Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C or 3 seconds at 350C. Copyright (c) 2016 TOSHIBA CORPORATION, All Rights Reserved. 3_20160329_No1284 Page: 2/8 MICROWAVE POWER GaN HEMT TGI1314-25L Pout , Gain , PAE , IDS vs. Pin VDS= 24 V, IDSset= 1.0 A, f= 13.75, 14.1, 14.5 GHz, Ta= +25 Pout vs Pin VDS=24V, IDS=1.0A 50 24 13.75GHz 14.1GHz 14.5GHz 46 16 Gain (dB) Pout (dBm) 13.75GHz 14.1GHz 14.5GHz 20 42 38 34 12 8 4 30 0 26 18 22 26 30 34 Pin (dBm) 38 42 18 46 PAE vs Pin VDS=24V, IDS=1.0A 60 22 38 42 46 13.75GHz 14.1GHz 14.5GHz 5 40 26 30 34 Pin (dBm) IDS vs Pin VDS=24V, IDS=1.0A 6 13.75GHz 14.1GHz 14.5GHz 50 4 IDS (A) PAE (%) Gain vs Pin VDS=24V, IDS=1.0A 30 3 20 2 10 1 0 18 22 26 30 34 Pin (dBm) 38 42 46 Copyright (c) 2016 TOSHIBA CORPORATION, All Rights Reserved. 0 18 22 26 30 34 Pin (dBm) 38 3_20160329_No1284 42 46 Page: 3/8 MICROWAVE POWER GaN HEMT TGI1314-25L IM3, IM5 vs. Pout VDS= 24 V, IDSset= 1.0 A, f= 13.75, 14.1, 14.5 GHz, f= 5 MHz , Ta= +25 IM3 vs Pout VDS=24V, IDS=1.0A -20 -20 13.75GHz 14.1GHz 14.5GHz -30 IM5 (dBc) -30 IM3 (dBc) IM5 vs Pout VDS=24V, IDS=1.0A -40 -50 -50 13.75GHz 14.1GHz 14.5GHz -60 25 30 35 40 Pout (dBm) @S.C.L -40 -60 25 45 30 35 40 Pout (dBm) @S.C.L 45 Pout vs. Frequency VDS= 24 V, IDSset= 1.0 A, Ta= +25 48 Pout vs Freq VDS=24V, IDS=1.0A 41dBm Pout (dBm) 46 39dBm 44 37dBm 42 35dBm 40 33dBm 38 31dBm 36 29dBm 34 27dBm 25dBm 32 23dBm 30 28 13.4 13.6 21dBm 13.8 14.0 14.2 f (GHz) 14.4 Copyright (c) 2016 TOSHIBA CORPORATION, All Rights Reserved. 14.6 14.8 3_20160329_No1284 Page: 4/8 MICROWAVE POWER GaN HEMT TGI1314-25L Pout , Gain , PAE , IDS vs. Pin vs. IDSset VDS= 24 V, IDSset= 0.5, 1.0, 1.5 A, f= 14.1 GHz, Ta= +25 Pout vs Pin VDS=24V, f=14.1GHz 50 24 0.5Aset 1.0Aset 1.5Aset 46 16 Gain (dB) Pout (dBm) 0.5Aset 1.0Aset 1.5Aset 20 42 38 34 12 8 4 30 0 26 18 22 26 30 34 Pin (dBm) 38 42 18 46 PAE vs Pin VDS=24V, f=14.1GHz 60 22 38 42 46 0.5Aset 1.0Aset 1.5Aset 5 40 26 30 34 Pin (dBm) IDS vs Pin VDS=24V, f=14.1GHz 6 0.5Aset 1.0Aset 1.5Aset 50 4 IDS (A) PAE (%) Gain vs Pin VDS=24V, f=14.1GHz 30 3 20 2 10 1 0 0 18 22 26 30 34 Pin (dBm) 38 42 46 Copyright (c) 2016 TOSHIBA CORPORATION, All Rights Reserved. 18 22 26 30 34 38 Pin (dBm) 3_20160329_No1284 42 46 Page: 5/8 MICROWAVE POWER GaN HEMT TGI1314-25L IM3, IM5 vs. Pout vs. IDSset VDS= 24 V, IDSset= 0.5, 1.0, 1.5 A, f= 14.1 GHz, f= 5 MHz, Ta= +25 IM3 vs Pout VDS=24V, f=14.1GHz -20 -20 0.5Aset 1.0Aset 1.5Aset -30 IM5 (dBc) -30 IM3 (dBc) IM5 vs Pout VDS=24V, f=14.1GHz -40 -50 -50 0.5Aset 1.0Aset 1.5Aset -60 25 30 35 40 Pout (dBm) @S.C.L Copyright (c) 2016 TOSHIBA CORPORATION, All Rights Reserved. -40 -60 45 25 30 35 40 Pout (dBm) @S.C.L 3_20160329_No1284 45 Page: 6/8 MICROWAVE POWER GaN HEMT TGI1314-25L S-Parameters VDS= 24 V, IDSset= 1.0 A, f= 11.0 to 16.0 GHz, Ta= +25 S11, S22 VDS=24V, IDS=1.0A 0 S21, S12 VDS=24V, IDS=1.0A 15 S21 S12 10 5 S21, S12(dB) S11, S22(dB) -5 -10 -15 -20 0 -5 -10 -15 S11 S22 -20 -25 -25 11 12 13 14 f(GHz) 15 Copyright (c) 2016 TOSHIBA CORPORATION, All Rights Reserved. 16 11 12 13 14 f(GHz) 3_20160329_No1284 15 Page: 16 7/8 MICROWAVE POWER GaN HEMT TGI1314-25L RESTRICTIONS ON PRODUCT USE All presented data are typical curves/values and for reference only as design guidance. Devices are not necessarily guaranteed at these curves and values. Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. 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Product is intended for use in communications equipment (including Radar) on the ground. Product is neither Intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability, and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact ("Unintended Use"). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aircraft and space equipment, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustion or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. If you are considering using the Product in such situation, please contact us in advance. Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. Copyright (c) 2016 TOSHIBA CORPORATION, All Rights Reserved. 3_20160329_No1284 Page: 8/8