MICROWAVE POWER GaN HEMT
TGI1314-25L
Copyright © 2016 TOSHIBA CORPORATION, All Rights Reserved. 3_20160329_No1284 Page: 1 / 8
FEATURES
･BROAD BAND INTERNALLY MATCHED HEMT
･HIGH POWER
Pout= 44.0dBm at Pin= 39.0dBm
･HIGH GAIN
GL= 8.0dB at 13.75GHz to 14.5GHz
･LOW INTERMODULATION DISTORTION
IM3(Min,)= -25dBc at Pout= 37.0dBm
Single Carrier Level
･HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
Output Power Pout
VDS= 24V
IDSset= 1.0A
f =13.75 to 14.5GHz
@Pin= 39dBm
dBm 43.0 44.0
Drain Current IDS1 A 2.5 3.0
Power Added Efficiency add % 29
Gate Currrent IgRF mA -20 +50
Linear Gain GL @Pin= 20dBm dB 7.0 8.0
Gain Flatness G dB ±0.8
3rd Order Intermodulation
Distortion IM3 Two tone test
Po= 37.0dBm, f= 5MHz
(Single Carrier Level)
dBc -25
Drain Current IDS2 A 1.75 2.25
Channel Temperature Rise Tch (VDS X IDS + Pin – Pout)
X Rth(c-c) °C 110 140
Recommended Gate Resistance(Rg): 13.3
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
Transconductance gm VDS= 5V
IDS= 2.5A S 2.25
Pinch-off Voltage VGSoff VDS= 5V
IDS= 11.5mA V -1.0 -4.0 -6.0
Saturated Drain Current IDSS VDS= 5V
VGS= 0V A 9.0
Gate-Source Breakdown Voltage VGSO IGS= -5mA V -10
Thermal Resistance Rth(c-c) Channel to Case °C/W 2.8 3.2
The information contained herein is presented as guidance for product use. No responsibility is assumed by
TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from
the use of product. No license to any intellectual property right is granted by this document. The information
contained herein is subject to change without prior notice. It is advisable to contact TOSHIBA before proceeding
with design of equipment incorporating this product.
MICROWAVE POWER GaN HEMT
TGI1314-25L
Copyright © 2016 TOSHIBA CORPORATION, All Rights Reserved. 3_20160329_No1284 Page: 2 / 8
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
CHARACTERISTICS SYMBOL UNIT RATING
Drain-Source Voltage VDS V 50
Gate-Source Voltage VGS V -10
Drain Current IDS A 7.5
Total Power Dissipation (Tc= 25°C) PT W 70
Channel Temperature Tch °C 250
Storage Temperature Tstg °C -65 to +175
PACKAGE OUTLINE (7-AA07A)
Unit in mm
Gate
Source
Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C or 3 seconds at
350°C.
MICROWAVE POWER GaN HEMT
TGI1314-25L
Copyright © 2016 TOSHIBA CORPORATION, All Rights Reserved. 3_20160329_No1284 Page: 3 / 8
･Pout , Gain , PAE , IDS vs. Pin
VDS= 24 V, IDSset= 1.0 A, f= 13.75, 14.1, 14.5 GHz, Ta= +25 ℃
0
1
2
3
4
5
6
18 22 26 30 34 38 42 46
IDS (A)
Pin (dBm)
IDS vs Pin
VDS=24V, IDS=1.0A
13.75GHz
14.1GHz
14.5GHz
0
10
20
30
40
50
60
18 22 26 30 34 38 42 46
PAE (%)
Pin (dBm)
PAE vs Pin
VDS=24V, IDS=1.0A
13.75GHz
14.1GHz
14.5GHz
0
4
8
12
16
20
24
18 22 26 30 34 38 42 46
Gain (dB)
Pin (dBm)
Gain vs Pin
VDS=24V, IDS=1.0A
13.75GHz
14.1GHz
14.5GHz
26
30
34
38
42
46
50
18 22 26 30 34 38 42 46
Pout (dBm)
Pin (dBm)
Pout vs Pin
VDS=24V, IDS=1.0A
13.75GHz
14.1GHz
14.5GHz
MICROWAVE POWER GaN HEMT
TGI1314-25L
Copyright © 2016 TOSHIBA CORPORATION, All Rights Reserved. 3_20160329_No1284 Page: 4 / 8
･IM3, IM5 vs. Pout
VDS= 24 V, IDSset= 1.0 A, f= 13.75, 14.1, 14.5 GHz, f= 5 MHz , Ta= +25 ℃
･Pout vs. Frequency
VDS= 24 V, IDSset= 1.0 A, Ta= +25 ℃
-60
-50
-40
-30
-20
25 30 35 40 45
IM5 (dBc)
Pout (dBm) @S.C.L
IM5 vs Pout
VDS=24V, IDS=1.0A
13.75GHz
14.1GHz
14.5GHz
-60
-50
-40
-30
-20
25 30 35 40 45
IM3 (dBc)
Pout (dBm) @S.C.L
IM3 vs Pout
VDS=24V, IDS=1.0A
13.75GHz
14.1GHz
14.5GHz
28
30
32
34
36
38
40
42
44
46
48
13.4 13.6 13.8 14.0 14.2 14.4 14.6 14.8
Pout (dBm)
f (GHz)
Pout vs Freq
VDS=24V, IDS=1.0A
41dBm
39dBm
37dBm
35dBm
33dBm
31dBm
29dBm
27dBm
25dBm
23dBm
21dBm
MICROWAVE POWER GaN HEMT
TGI1314-25L
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･Pout , Gain , PAE , IDS vs. Pin vs. IDSset
VDS= 24 V, IDSset= 0.5, 1.0, 1.5 A, f= 14.1 GHz, Ta= +25 ℃
0
1
2
3
4
5
6
18 22 26 30 34 38 42 46
IDS (A)
Pin (dBm)
IDS vs Pin
VDS=24V, f=14.1GHz
0.5Aset
1.0Aset
1.5Aset
0
10
20
30
40
50
60
18 22 26 30 34 38 42 46
PAE (%)
Pin (dBm)
PAE vs Pin
VDS=24V, f=14.1GHz
0.5Aset
1.0Aset
1.5Aset
0
4
8
12
16
20
24
18 22 26 30 34 38 42 46
Gain (dB)
Pin (dBm)
Gain vs Pin
VDS=24V, f=14.1GHz
0.5Aset
1.0Aset
1.5Aset
26
30
34
38
42
46
50
18 22 26 30 34 38 42 46
Pout (dBm)
Pin (dBm)
Pout vs Pin
VDS=24V, f=14.1GHz
0.5Aset
1.0Aset
1.5Aset
MICROWAVE POWER GaN HEMT
TGI1314-25L
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･IM3, IM5 vs. Pout vs. IDSset
VDS= 24 V, IDSset= 0.5, 1.0, 1.5 A, f= 14.1 GHz, f= 5 MHz, Ta= +25 ℃
-60
-50
-40
-30
-20
25 30 35 40 45
IM5 (dBc)
Pout (dBm) @S.C.L
IM5 vs Pout
VDS=24V, f=14.1GHz
0.5Aset
1.0Aset
1.5Aset
-60
-50
-40
-30
-20
25 30 35 40 45
IM3 (dBc)
Pout (dBm) @S.C.L
IM3 vs Pout
VDS=24V, f=14.1GHz
0.5Aset
1.0Aset
1.5Aset
MICROWAVE POWER GaN HEMT
TGI1314-25L
Copyright © 2016 TOSHIBA CORPORATION, All Rights Reserved. 3_20160329_No1284 Page: 7 / 8
･S-Parameters
VDS= 24 V, IDSset= 1.0 A, f= 11.0 to 16.0 GHz, Ta= +25 ℃
-25
-20
-15
-10
-5
0
5
10
15
11 12 13 14 15 16
S21, S12(dB)
f(GHz)
S21, S12
VDS=24V, IDS=1.0A
S21
S12
-25
-20
-15
-10
-5
0
11 12 13 14 15 16
S11, S22(dB)
f(GHz)
S11, S22
VDS=24V, IDS=1.0A
S11
S22
MICROWAVE POWER GaN HEMT
TGI1314-25L
Copyright © 2016 TOSHIBA CORPORATION, All Rights Reserved. 3_20160329_No1284 Page: 8 / 8
RESTRICTIONS ON PRODUCT USE
･All presented data are typical curves/values and for reference only as design guidance.
･Devices are not necessarily guaranteed at these curves and values.
･Toshiba Corporation, and its subsidiaries and affiliates (collectively ”TOSHIBA”), reserve the right to make
changes to the information in this document, and related hardware, software and systems (collectively
“Product”) without notice.
･This document and any information herein may not be reproduced without prior written permission from
TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without
alteration/omission.
･Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail.
Customers are responsible for complying with safety standards and for providing adequate designs and
safeguards for their hardware, software and systems which minimize risk and avoid situations in which a
malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including
data loss or corruption. Before creating and producing designs and using, customers must also refer to and
comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this
document, the specifications, the data sheets and application notes for Product and the precautions and
conditions set forth therein and (b) the instructions for the application that Product will be used with or for,
Customers are solely responsible for all aspects of their own product design or applications, including but not
limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b)
evaluating and determining the applicability of any information contained in this document, or in charts, diagrams,
programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating
all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR
CUSTOMERS’ PRODUCT DESIGN OR APPLI CATIONS.
･Product is intended for use in communications equipment (including Radar) on the ground. Product is neither
Intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability, and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property
damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment
used in nuclear facilities, equipment used in the aircraft and space equipment, medical equipment, equipment
used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to
control combustion or explosions, safety devices, elevators and escalators, devices related to electric power,
and equipment used in finance-related fields. If you are considering using the Product in such situation, please
contact us in advance.
･Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in
part.
･Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is
prohibited under any applicable laws or regulations.
･The information contained herein is presented only as guidance for Product use. No responsibility is assumed
by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may
result from the use of Product. No license to any intellectual property right is granted by this document, whether
express or implied, by estoppel or otherwise.
