APTM50DHM38G
APTM50DHM38G – Rev 3 July, 2006
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G1
S1
S4
G4
CR3
VBUS
OUT2
0/VBUS
Q4
OUT1
CR2
Q1
S4
G4
VBUS 0/VBUS
S1
G1
OUT1
OUT2
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
S
ymbol Parameter Max ratings Unit
VDSS Drain - Source Breakdown Voltage 500 V
Tc = 25°C 90
ID Continuo us Drain Current Tc = 80°C 67
IDM Pulsed Drain current 360
A
VGS Gate - Source Voltage ±30 V
RDSon Drain - Source ON Resistance 45 mΩ
PD Maximum Power Dissipation Tc = 25°C 694 W
IAR Avalanche current (repetitive and non repetitive) 46 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 2500 mJ
VDSS = 500V
RDSon = 38mΩ typ @ Tj = 25°C
ID = 90A @ Tc = 25°C
Applicatio
n
• Welding converters
• Switched Mode Power Supplies
• Switched Reluctance Motor Drives
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate c harge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
Benefits
• Outstandi ng performa nce at hi gh freq uency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
• RoHS Compliant
Asymmetrical - bridge
MOSFET Power Module
APTM50DHM38G
APTM50DHM38G – Rev 3 July, 2006
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VGS = 0V,VDS = 500V Tj = 25°C 200
IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 400V Tj = 125°C 1000
µA
RDS(on) Drain – Source on Resistance VGS = 10V, ID = 45A 38 45
mΩ
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 5mA 3 5 V
IGS S Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±150 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cis s Input Capacitance 11.2
Coss Output Capacitance 2.4
Crss Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz 0.18
nF
Qg Total gate Charge 246
Qgs Gate – Source Charge 66
Qgd Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 90A 130
nC
Td(on) Tur n-on Delay Ti me 18
Tr Rise Time 35
Td(off) Turn-off Delay Time 87
Tf Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 90A
RG = 2Ω 77
ns
Eon Turn-on Switching Energy 1510
Eoff Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 90A, RG = 2Ω 1452
µJ
Eon Turn-on Switching Energy 2482
Eoff Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 90A, RG = 2Ω 1692
µJ
Diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 600 V
Tj = 25°C 250
IRM Maximum Reverse Leakage Current VR=600V Tj = 125°C 500 µA
IF DC Forward Current Tc = 80°C 100 A
IF = 100A 1.6 1.8
IF = 200A 1.9 VF Diode Forward Voltage
IF = 100A Tj = 125°C 1.4
V
Tj = 25°C 180
trr Reverse Recovery Time
Tj = 125°C 220
ns
Tj = 25°C 390
Qrr Reverse Recovery Charge
IF = 100A
VR = 400V
di/dt = 200A/µs
Tj = 125°C 1450
nC
APTM50DHM38G
APTM50DHM38G – Rev 3 July, 2006
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Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
Transistor 0.18
RthJC Junction to Case Thermal Resistance Diode 0.6
°C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
To heatsink M6 3 5
Torque Mounting torque For terminals M5 2 3.5 N.m
Wt Package Weight 280 g
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
APTM50DHM38G
APTM50DHM38G – Rev 3 July, 2006
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Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5.5V
6V
6.5V
7V
7.5V
8V
0
50
100
150
200
250
300
350
0 5 10 15 20 25
VDS, Drain to Source Voltage (V)
ID, Drain Current (A)
VGS=10&15V
Low Voltage Output Characteristics Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
50
100
150
200
250
012345678
VGS, Gate to Source Voltage (V)
ID, Drain Current (A)
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
0 50 100 150 200
ID, Drain Current (A)
RDS(on) Drain to Source ON Resistance
Normalized to
VGS=10V @ 45A
0
20
40
60
80
100
25 50 75 100 125 150
TC, Case Temperature (°C)
ID, DC Drain Current (A)
DC Drain Current vs Case Temperature
APTM50DHM38G
APTM50DHM38G – Rev 3 July, 2006
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0.7
0.8
0.9
1.0
1.1
1.2
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
Breakdown Voltage vs Temperature
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
RDS(on), Drain to Source ON resistance
(Normalized)
VGS=10V
ID=45A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
VGS(TH), Threshold Voltage
(Normalized)
limited b
y
R
DS
on
Maximum Safe Operating Area
10ms
1ms
100µs
1
10
100
1000
1 10 100 1000
VDS, Drain to Source Voltage (V)
ID, Drain Current (A)
limited by RDSon
Single pulse
TJ=150°C
TC=25°C
Ciss
Crss
Coss
10
100
1000
10000
100000
0 1020304050
VDS, Drain to Source Voltage (V)
C, Capacitance (pF)
Capacitance vs Drain to Source Voltage
VDS =100V
VDS =250V
VDS=400V
0
2
4
6
8
10
12
14
0 40 80 120 160 200 240 280 320
Gate Charge (nC)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
ID=90A
TJ=25°C
APTM50DHM38G
APTM50DHM38G – Rev 3 July, 2006
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Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
20 40 60 80 100 120 140
ID, Drain Current (A)
td(o n) and td(off) (ns)
VDS =333V
RG=2Ω
TJ=125°C
L=100µH
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
20 40 60 80 100 120 140
ID, Drain Current (A)
tr and tf (ns)
VDS=333V
RG=2Ω
TJ=125°C
L=100µH
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
350
400
20 30 40 50 60 70 80
ID, Drain Current (A)
Frequency (kHz)
Operating Frequency vs Drain Current
VDS=333V
D=50%
RG=2Ω
TJ=125°C
T
C
=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
IDR, Reverse Drain Current (A)
Source to Drain Diode Forward Voltage
Switching Energy vs Current
Eon
Eoff
0
1
2
3
4
5
20 40 60 80 100 120 140
ID, Drain Current (A)
Switching Energy (mJ)
VDS=333V
RG=2Ω
TJ=125°C
L=100µH
Eon
Eoff
Eof f
0
1
2
3
4
5
6
7
8
0 5 10 15 20 25
Gate Resistance (Ohms)
Switching Energy (mJ)
Switching Energy vs Gate Resistance
VDS=333V
ID=90A
TJ=125°C
L=100µH
M icrosemi rese rves the rig ht to cha nge , witho ut notice , the s pe cificatio ns and info rma tio n co nta ine d herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
