BFS17S NPN Silicon RF Transistor 4 * For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 15 Collector-base voltage VCBO 25 Emitter-base voltage VEBO 2.5 Collector current IC 25 Peak collector current, f = 10 MHz I CM 50 Total power dissipation Ptot 280 mW Junction temperature Tj 150 C Ambient temperature TA -65 ... 150 Storage temperature T stg -65 ... 150 V mA TS 93 C 1) Thermal Resistance Junction - soldering point 2) RthJS 240 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 1 Mar-21-2005 BFS17S Electrical Characteristics a TA = 25C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 15 - - DC characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 1 mA, IB = 0 Collector-base cutoff current A ICBO VCB = 10 V, IE = 0 - - 0.05 VCB = 25 V, IE = 0 - - 10 - - 100 Emitter-base cutoff current IEBO VEB = 2.5 V, IC = 0 DC current gain - hFE IC = 2 mA, VCE = 1 V 20 - 150 IC = 25 mA, VCE = 1 V 20 70 - - 0.1 0.4 Collector-emitter saturation voltage VCEsat V IC = 10 mA, IB = 1 mA 2 Mar-21-2005 BFS17S Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. AC characteristics Transition frequency GHz fT IC = 2 mA, VCE = 5 V, f = 200 MHz 1 1.4 - IC = 25 mA, VCE = 5 V, f = 200 MHz 1.3 2.5 - Ccb - 0.55 0.8 Cce - 0.13 - Cibo - 1.45 - Cobs - - 1.5 F - 3.5 5 |S 21e|2 - 12,7 - V01=V02 - 100 - mV IP 3 - 23 - dBm Collector-base capacitance pF VCB = 5 V, f = 1 MHz Collector-emitter capacitance VCE = 5 V, f = 1 MHz Input capacitance VEB = 0.5 V, IC = 0 , f = 1 MHz Output capacitance VCE = 5 V, VBE = 0 , f = 1 MHz Noise figure dB IC = 2 mA, VCE = 5 V, f = 800 MHz, ZS = 50 Transducer gain IC = 20 mA, VCE = 5 V, Z S = ZL = 50 , f = 500 MHz Linear output voltage IC = 14 mA, VCE = 5 V, dim = 60 dB, f1 = 806 MHz, f 2 = 810 MHz, ZS = ZL = 50 Third order intercept point IC = 200 mA, V CE = 8 V, ZS=ZSopt , ZL=ZLopt , f = 900 MHz 3 Mar-21-2005 BFS17S Total power dissipation P tot = f (TS) 300 mW 240 Ptot 220 200 180 160 140 120 100 80 60 40 20 0 0 20 40 60 80 120 C 100 150 TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 10 3 Ptotmax / PtotDC K/W RthJS 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 10 1 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 Mar-21-2005 BFS17S Collector-base capacitance Ccb = f (VCB) f = 1MHz Transition frequency fT = f (IC ) VCE = Parameter 1.3 3.0 pF 1.1 10V GHz 5V 3V 0.9 2.0 fT Ccb 1.0 0.8 2V 0.7 1.5 0.6 0.5 1.0 0.4 0.3 1V 0.5 0.2 0.7V 0.1 0.0 0 4 8 12 16 20 V 0.0 0 26 VCB 5 10 15 20 mA 30 IC 5 Mar-21-2005 Package SOT363 Package Outline 2 0.2 0.9 0.1 +0.1 0.2 -0.05 6x 0.1 0.1 MAX. M A 1 2 +0.2 acc. to DIN 6784 3 0.1 1.25 0.1 4 0.1 MIN. 5 2.1 0.1 6 0.15 +0.1 -0.05 0.65 0.65 0.2 M A Foot Print 1.6 0.7 0.3 0.65 0.65 Marking Layout Manufacturer Pin 1 Type code BCR108S Example Packing Code E6327: Reel o180 mm = 3.000 Pieces/Reel Code E6433: Reel o330 mm = 10.000 Pieces/Reel 0.2 Pin 1 2.15 8 2.3 4 1.1 Impressum Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen (c) Infineon Technologies AG 2005. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.Infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.