Diode ASl@YS sua sop Va lo tr Cr ae Application Part No. (v) (mA) Max. Max. Package circuits (ns) (pF) DA227 80 100 4 - UM4 Fig.4 DAN202C 80 100 4 - SST Fig.1 DAN202K 80 100 4 - SMT Fig.1 DAN202U 80 100 4 - UMT Fig.1 DAN222 80 100 4 - EM3 Fig.1 DAP202C 80 100 4 - SST Fig.6 DAP202K 80 100 4 - SMT Fig.6 DAP202U 80 100 4 - UMT Fig.6 High-Speed DAP222 80 100 4 - EM3 Fig.6 Switching FMN1 80 25 4 - FMT Fig.2 UMN1 80 25 4 - UMS Fig.14 FMP1 a0 25 4 - FMT Fig.7 UMP1 80 25 4 - UM5 Fig.15 IMN10 80 100 4 - MD Fig.3 IMN11 80 100 4 - IMD Fig.5 IMP11 80 100 4 ~ IMD Fig.8 UMP11 80 100 4 - UM6 Fig.17 UMN11 80 100 4 - UM6 Fig.16 DA106K 8 15 - - SMT Fig.9 DA106U 8 15 - ~ UMT Fig.9 OA112 80 100 4 3.5 UMT Fig.11 DA113 so 100 4 35 UMT Fig.12 DA114 80 100 4 3.5 UMT Fig.10 DA115 80 too 4 35 UMT Fig.9 DA116 80 100 4 35 SMT Fig.11 DA118 80 100 4 35 SMT Fig.12 DA119 80 100 4 3.5 SMT Fig.9 DA120 80 100 4 3.5 EM3 Fig.11 DA121 80 100 4 3.5 EM3 Fig.10 : . DA122 80 100 4 3.5 EM3 Fig.9 2 Vrs Connected in series DA123 80 100 4 36 EM3 Fig.12 DA204K 20 100 = 4 SMT Fig.13 DA204U 20 100 - 4 UMT Fig.13 0A221 20 100 ~ 4 EM3 Fig.13 DAN212K 80 100 4 35 SMT Fig.10 DAN212C 80 100 4 3.5 SST Fig.10 DAN217 80 100 - 35 SMT Fig.13 OAN217C 80 100 - 35 SST Fig.13 DA223K 40 100 = 5.0 SMT Fig.13 DA223 40 100 = 5.0 EMS Fig.13 DA226U 40 100 = 5.0 UMT Fig.13 lr DA226K a0 100 - 5.0 SMT Fig.13 Note : syUnder development Internal circuit 0 (243) (@) GH) G 6) @ @ [4 & Hk (23) (4) (SHC) (81) KY ey (2H) a ia) @ Ca @ CQ @ Oar @ a Q3) (2) GHG) (@) Oy @ 0 1 a ay (2) MQ) @ B (3) (3) G3) (4) (6)(4) (ea) ak 3 6 Fig.1 Fig.2 Fig.3 Fig.4 Fig.5 Fig.6 Fig.7 Fig.8 Fig.9 | Fig.10 | Fig.11 | Fig.12 | Fig.13 | Fig.i4 | Fig.15 | Fig.16 | Fig.17 178