2SA1012
PNP
Plastic-Encapsulate
Transistor
Features
• Capable of 25 Watts of Power Dissipation.
• Collector-current -5.0A
• Collector-base Voltage -60V
• Operating and storage junction temperature range: -55к to +150к
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage
(IC=-1.0mAdc, IB=0) -50 --- Vdc
V(BR)CBO Collector-Base Breakdown Voltage
(IC=-1mAdc, IE=0) -60 --- Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
(IE=-0.1mAdc, IC=0) -5.0 --- Vdc
ICBO Collector Cutoff Current
(VCB=-50Vdc, IE=0) --- -1.0 uAdc
ON CHARACTERISTICS
hFE(1) DC Current Gain
(IC=-1Adc, VCE=-1Vdc) 70 240 ---
hFE(2) DC Current Gain
(IC=-3Adc, VCE=-1Vdc) 30 --- ---
VCE(sat) Collector-Emitter Saturation Voltage
(IC=-3Adc, IB=-150mAdc) -0.2 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(IC=-3Adc, IB=-150mAdc) -0.9 Vdc
SMALL-SIGNAL CHARACTERISTICS
fT Transistor Frequency
(IC=-1Adc, VCE=-4Vdc) 60 --- MHz
omponents
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MCC
Revision: 1 2006/11/21
TM
Micro Commercial Components
www.mccsemi.com
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x Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
IEBO Emitter Cutoff Current
(VEB=-5.0Vdc, IC=0) --- -1.0 uAdc
-1.2
-0.4
()
--- PF
V
CB=-10V, IE=0, f=1MHz
Collector output capacitance
Cob 170(Typ)
INCHES MM
A .560 .625 14.22 15.88
B .380 .420 9.65 10.67
C .100 .135 2.54 3.43
D .230 .270 5.84 6.86
E .335 .368 8.50 9.35
F ------ .250 ------ 6.35
G .500 .580 12.70 14.73
H .090 .110 2.29 2.79
I .020 .045 0.51 1.14
J .012 .025 0.30 0.64
K .139 .161 3.53 4.09
L .140 .190 3.56 4.83
M .045 .055 1.14 1.40
N .080 .115 2.03 2.92
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
TO-220AB
PIN
PIN 1. BASE
PIN 2. COLLECTOR
12 3
PIN 3. EMITTER
Note: hFE(1) Classification O : 70-140, Y : 120-240
MCC
Revision: 1 2006/11/21
TM
Micro Commercial Components
www.mccsemi.com
2 of 2
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