TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/509
Devices Qualified Level
2N6338 2N6341
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol 2N6338 2N6341 Unit
Collector-Emitter Voltage VCEO 100 150 Vdc
Collector-Base Voltage VCBO 120 180 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Base Current IB 10 Adc
Collector Current IC 25 Adc
Total Power Dissipation (1) @ TA = +250C
@ TC = +1000C PT 200
112 W
W
Operating & Storage Junction Temperature Range Top, Tstg -65 to +175 0C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case RθJC 0.875 0C/W
1) Derate linearly 1.14 W/0C for TC = +250C and TC = +2000C
TO-3*
(TO-204AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 50 mAdc 2N6338
2N6341
V(BR)CEO
100
150
Vdc
Collector-Emitter Cutoff Current
VCE = 50 Vdc 2N6338
VCE = 75 Vdc 2N6341
ICEO
50
µAdc
Collector-Emitter Cutoff Current
VCE = 100 Vdc, VBE = 1.5 Vdc 2N6338
VCE = 150 Vdc, VBE = 1.5 Vdc 2N6341
ICEX
10
10
µAdc
Emitter-Base Cutoff Current
VEB = 6.0 Vdc IEBO 100 µAdc
Collector-Base Cutoff Current
VCB = 120 Vdc 2N6338
VCB = 180 Vdc 2N6341
ICEO
10
10
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N6338, 2N6341 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (2)
Forward-Current Transfer Ratio
IC = 0.5 Adc, VCE = 2.0 Vdc
IC = 10 Adc, VCE = 2.0 Vdc
IC = 25 Adc, VCE = 2.0 Vdc
hFE
40
30
12
120
Collector-Emitter Saturation Voltage
IC = 10 Adc, IB = 1.0 Adc
IC = 25 Adc, IB = 2.5 Adc
VCE(sat)
1.0
1.8
Vdc
Base-Emitter Saturation Voltage
IC = 10 Adc, IB = 1.0 Adc VBE(sat) 1.8 Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 1.0 Adc, VCE = 10 Vdc, f = 10 MHz hfe 4.0 12
Output Capacitance
VCB = 10 Vdc, IE = 0, 0.1 MHz ≤ f ≤ 1.0 MHz Cobo 450 pF
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 80 Vdc; IC = 10 Adc; IB = 1.0 Adc ton 0.5 µs
Turn-Off Time
VCC = 80 Vdc; IC = 10 Adc; IB1 = IB2 = 1.0 Adc toff 1.25 µs
Storage Time
VCC = 80 Vdc; IC = 10 Adc; IB1 = IB2 = 1.0 Adc ts 1.0 µs
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 8.0 Vdc, IC = 25 Adc All Types
Test 2
VCE = 14 Vdc, IC = 14 Adc All Types
Test 3
VCE = 100 Vdc, IC = 100 mAdc 2N6338
VCE = 150 Vdc, IC = 66 mAdc 2N6341
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
