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DATA SH EET
Product data sheet
Supersedes data of 1997 Apr 22
1999 Apr 23
DISCRETE SEMICONDUCTORS
BSP50; BSP51; BSP52
NPN Darlington transistors
handbook, halfpage
M3D087
1999 Apr 23 2
NXP Semiconductors Product data sheet
NPN Darlington transistors BSP50; BSP51; BSP52
FEATURES
•High current (max. 1 A)
•Low voltage (max. 80 V)
•Integrated diode and resis tor .
APPLICATIONS
•Industrial high gain amplification .
DESCRIPTION
NPN Darlington transistor in a SOT223 plastic package.
PNP complements: BSP60, BSP61 and BSP62.
PINNING
PIN DESCRIPTION
1base
2,4 collector
3emitter
Fig.1 Simplified outline (SOT223) and symbol.
4
123
MAM265
Top view
1
2, 4
3
LIMITING VALUES
In accordance with th e Absolute Maximum Ratin g S ystem (IEC 134).
Note
1. Device mounted on a pr inted-circuit board, single side d copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for th e SOT223 in the General Part of associated
Handbook”.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base volta ge open emitter
BSP50 −60 V
BSP51 −80 V
BSP52 −90 V
VCES collector-emitter voltage VBE = 0
BSP50 −45 V
BSP51 −60 V
BSP52 −80 V
VEBO emitter-base vo ltage open collector −5 V
ICcollector current (DC) −1 A
ICM peak collector current −2 A
IBbase current (DC) −100 mA
Ptot total power dissipation Tamb ≤ 25 °C; note 1 −1.25 W
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
1999 Apr 23 3
NXP Semiconductors Pr oduct data shee t
NPN Darlington transistors BSP50; BSP51; BSP52
THERMAL CHARACTE RISTICS
Note
1. Device mounted on a pr inted-circuit board, single side d copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for th e SOT223 in the General Part of associated
Handbook“.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 96 K/W
Rth j-s thermal resistance from junction to solder point 17 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICES collector cut-off current
BSP50 VBE = 0; VCE = 45 V −−50 nA
BSP51 VBE = 0; VCE = 60 V −−50 nA
BSP52 VBE = 0; VCE = 80 V −−50 nA
IEBO emitter cut-off current IC = 0; VEB = 4 V −−50 nA
hFE DC current gain VCE = 10 V; note 1; see Fig.2
IC = 150 mA 1 000 − −
IC = 500 mA 2 000 − −
VCEsat collector-emitter saturation
voltage IC = 500 mA; IB = 0.5 mA −−1.3 V
IC = 500 mA; IB = 0.5 mA;
Tj = 150 °C−−1.3 V
VBEsat base-emitt er satura tion
voltage IC = 500 mA; IB = 0.5 mA −−1.9 V
fTtransition freque ncy IC = 500 mA; VCE = 5 V; f = 100 MHz −200 −MHz
Switching times (between 10% and 90% levels); see Fig.3
ton turn-on time ICon = 500 mA; IBon = 0.5 mA;
IBoff = −0.5 mA −500 −ns
toff turn-off time −1 300 −ns
1999 Apr 23 4
NXP Semiconductors Pr oduct data shee t
NPN Darlington transistors BSP50; BSP51; BSP52
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
5000
1000
2000
3000
4000
MGD838
10
−1
1IC (mA)
hFE
10 10
2
10
3
VCE = 10 V.
Fig.3 Test circuit for switching times.
handbook, full pagewidth
RC
R2
R1
DUT
MLB826
Vo
RB(probe)
450 Ω
(probe)
450 Ω
oscilloscope oscilloscope
V
BB
Vi
V
CC
Vi = 10 V; T = 200 μs; tp = 6 μs; tr = tf ≤ 3 ns.
R1 = 56 Ω; R2 = 10 kΩ; RB = 10 kΩ; RC = 18 Ω.
VBB = −1.8 V; VCC = 10.7 V.
Oscilloscope: input impedance Zi = 50 Ω.
1999 Apr 23 5
NXP Semiconductors Pr oduct data shee t
NPN Darlington transistors BSP50; BSP51; BSP52
PACKAGE OUTLINE
UNIT A1bpcDEe1HELpQywv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.10
0.01
1.8
1.5 0.80
0.60
b1
3.1
2.9 0.32
0.22 6.7
6.3 3.7
3.3 2.3
e
4.6 7.3
6.7 1.1
0.7 0.95
0.85 0.1 0.10.2
DIMENSIONS (mm are the original dimensions)
SOT223 SC-73 97-02-28
99-09-13
wM
bp
D
b1
e1
e
A
A1
Lp
Q
detail X
HE
E
vMA
AB
B
c
y
0 2 4 mm
scale
A
X
132
4
P
lastic surface mounted package; collector pad for good heat transfer; 4 leads SOT22
3
1999 Apr 23 6
NXP Semiconductors Product data sheet
NPN Darlington transistors BSP50; BSP51; BSP52
DATA SHEET STATUS
Notes
1. Please consult the most rec en tly issued document before initiating or co mpleting a design.
2. The product s tatus of device(s) described in this document may have changed since this document was pub lis hed
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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does not give any representations or warranties,
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reserves the right to make changes to information
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Applications ⎯ Applications that are described herein for
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NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values an d
Characteristics sections of this docu ment, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
Contact information
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this document does not form p art of any quotation or co nt ra ct, is believed to be accurate a nd reliable and may be change d
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands 115002/00/03/pp7 Date of releas e: 1999 Apr 23 Document orde r number: 9397 750 05809
