MITSUBISHI TRANSISTOR MODULES QM20TD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM20TD-HB * * * * * IC Collector current .......................... 20A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................. 250 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM 7 (23.5) 25.5 25.5 5.5 2 Fig. 2 4 8.0 6.35 2.8 1.5 5.5 8.6 45 28 18 1.2 Fig. 1 1.65 3.4 15 7 9.5 11 7 15 1.5 (30.5) Dimensions in mm 76 93 P 105 LABEL 13 Tab#110, t=0.5(Fig. 1) 7 (22.45) Tab#250, t=0.8(Fig. 2) BuP EuP u BvP EvP v BwP EwP w BuN EuN BvN EvN BwN EwN N Note: All Transistor Units are Darlingtons. Feb.1999 MITSUBISHI TRANSISTOR MODULES QM20TD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS (Tj=25C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 600 V VCEX Collector-emitter voltage VEB=2V 600 V VCBO Collector-base voltage Emitter open 600 V VEBO Emitter-base voltage Collector open 7 V IC Collector current DC 20 A -IC Collector reverse current DC (forward diode current) 20 A PC Collector dissipation TC=25C 83 W IB Base current DC 1 A -ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 200 A Tj Junction temperature -40~+150 C Tstg Storage temperature -40~+125 C Viso Isolation voltage Parameter Symbol Conditions Charged part to case, AC for 1 minute -- Mounting torque Mounting screw M5 -- Weight Typical value ELECTRICAL CHARACTERISTICS 2500 V 1.47~1.96 N*m 15~20 kg*cm 90 g (Tj=25C, unless otherwise noted) Limits Symbol Test conditions Parameter Min. Typ. Max. Unit ICEX Collector cutoff current VCE=600V, VEB=2V -- -- 1.0 mA ICBO Collector cutoff current VCB=600V, Emitter open -- -- 1.0 mA IEBO Emitter cutoff current VEB=7V -- -- 40 mA VCE (sat) Collector-emitter saturation voltage -- -- 2.0 V VBE (sat) Base-emitter saturation voltage -- -- 2.5 V -VCEO Collector-emitter reverse voltage -IC=20A (diode forward voltage) -- -- 1.5 V hFE DC current gain IC=20A, VCE=2V 250 -- -- -- -- -- 1.5 s Switching time VCC=300V, IC=20A, IB1=120mA, IB2=-400mA -- -- 12 s -- -- 2.0 s Transistor part (per 1/6 module) -- -- 1.5 C/ W Diode part (per 1/6 module) -- -- 2.5 C/ W Conductive grease applied (per 1/6 module) -- -- 0.35 C/ W IC=20A, IB=80mA ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM20TD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 2 40 DC CURRENT GAIN hFE IB=400mA Tj=25C IB=200mA IB=80mA 30 IB=40mA 20 IB=20mA 10 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 5 VCE=2.0V Tj=25C 10 -1 7 5 4 3 2 10 -2 1.0 1.4 1.8 2.2 2.6 BASE-EMITTER VOLTAGE 10 2 7 5 4 3 2 10 0 3.0 10 1 7 5 4 3 2 IC=25A 2 0 10 -2 IC=20A 2 3 4 5 7 10 -1 VBE(sat) 10 0 7 5 4 3 2 VCE(sat) 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 0 BASE CURRENT IB (A) IB=80mA Tj=25C Tj=125C 2 3 4 5 7 10 2 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton, ts, tf (s) 4 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) Tj=25C Tj=125C IC=15A 2 3 4 5 7 10 1 VBE (V) 5 1 Tj=25C Tj=125C SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 3 VCE=2.0V COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 0 7 5 4 3 2 VCE=5.0V 10 3 7 5 4 3 2 VCE (V) SATURATION VOLTAGE COLLECTOR CURRENT IC (A) 50 3 2 10 1 7 5 4 3 2 VCC=300V IB1=120mA IB2=-400mA ts tf 10 0 7 5 ton 4 3 10 0 2 3 4 5 7 10 1 Tj=25C Tj=125C 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM20TD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 50 VCC=300V IB1=120mA IC=20A Tj=25C Tj=125C 10 1 7 5 4 3 2 ts 10 0 7 5 4 3 10 -1 tf 2 3 4 5 7 10 0 Tj=125C COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (s) 3 2 REVERSE BIAS SAFE OPERATING AREA 40 BASE REVERSE CURRENT -IB2 (A) 20 10 DERATING FACTOR (%) s 80 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 0 0 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT -IC (A) COLLECTOR CURRENT IC (A) s 1.8 TIME (s) SECOND BREAKDOWN AREA 90 VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 710 1 2.0 VCE (V) DERATING FACTOR OF F. B. S. O. A. 50 0 s 20 1m 10 0 7 5 3 2 TC=25C NON-REPETITIVE -1 10 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE Zth (j-c) (C/ W) 100 200 300 400 500 600 700 800 100 100s s 5m s m 10 DC 10 1 7 5 3 2 0 COLLECTOR-EMITTER VOLTAGE FORWARD BIAS SAFE OPERATING AREA 10 2 7 5 3 2 IB2=-3A 30 0 2 3 4 5 7 10 1 IB2=-0.5A 10 2 7 5 4 3 2 TC (C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 10 1 7 5 4 3 2 10 0 0.4 Tj=25C Tj=125C 0.8 1.2 1.6 2.0 2.4 COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM20TD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 180 160 140 120 100 80 60 40 20 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 1 7 5 4 3 2 10 2 VCC=300V IB1=120mA IB2=-400mA 10 0 7 5 4 3 2 10 -1 10 0 Qrr Irr 10 1 trr (s) 200 Irr (A), Qrr (c) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) trr Tj=25C Tj=125C 2 3 4 5 7 10 1 10 0 2 3 4 5 7 10 2 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 5 710 1 3.2 2.8 Zth (j-c) (C/ W) 2.4 2.0 1.6 1.2 0.8 0.4 0 10 -3 2 3 5 710 -2 2 3 5 7 10 -1 2 3 5 7 10 0 TIME (s) Feb.1999