Feb.1999
P
EuP
BuP
BuN
EuN
BvP
EvP
BvN
EvN
BwP
EwP
BwN
EwN
N
uvw
(30.5) 715 715 7 (23.5)
11 25.5 25.5
2
76
93
105
18
28
45
φ5.5
Tab#110, t=0.5(Fig. 1) Tab#250, t=0.8(Fig. 2)
(22.45)
7
13
48.0
6.35 φ1.65
2.8
φ1.2
8.6
5.5
1.5
1.5
9.5
3.4
LABEL
Fig. 1 Fig. 2
MITSUBISHI TRANSISTOR MODULES
QM20TD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
APPLICATION
Inverters, Servo drives, DC motor controllers, NC equipment, Welders
QM20TD-HB
•ICCollector current .......................... 20A
•VCEX Collector-emitter voltage ........... 600V
•hFE DC current gain.............................250
•Insulated Type
•UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
Note: All Transistor Units are Darlingtons.
Feb.1999
Conditions
IC=1A, VEB=2V
VEB=2V
Emitter open
Collector open
DC
DC (forward diode current)
TC=25°C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Mounting screw M5
Typical value
Ratings
600
600
600
7
20
20
83
1
200
–40~+150
–40~+125
2500
1.47~1.96
15~20
90
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
VCEX (SUS)
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
—
—
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
g
MITSUBISHI TRANSISTOR MODULES
QM20TD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Limits
Min.
—
—
—
—
—
—
250
—
—
—
—
—
—
Symbol
ICEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
VCE=600V, VEB=2V
VCB=600V, Emitter open
VEB=7V
IC=20A, IB=80mA
–IC=20A (diode forward voltage)
IC=20A, VCE=2V
VCC=300V, IC=20A, IB1=120mA, IB2=–400mA
Transistor part (per 1/6 module)
Diode part (per 1/6 module)
Conductive grease applied (per 1/6 module)
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
1.0
1.0
40
2.0
2.5
1.5
—
1.5
12
2.0
1.5
2.5
0.35
Feb.1999
–1
10
0
10
7
5
4
3
2
–2
10
7
5
4
3
2
1.0 1.4 1.8 2.2 2.6 3.0
VCE=2.0V
Tj=25°C
1
10
7
5
4
3
2
0
10
7
5
4
3
2
–1
10 0
10 23457 1
10 23457 2
10
VBE(sat)
VCE(sat)
Tj=25°C
Tj=125°C
IB=80mA
50
40
30
20
10
0012345
Tj=25°C
IB=20mA
IB=40mA
IB=80mA
IB=200mA
IB=400mA
3
10
7
5
4
3
2
2
10
7
5
4
3
20
10 23457 1
10 23457 2
10
2
VCE=2.0V
VCE=5.0V
Tj=25°C
Tj=125°C
0
10
–1
10 75432
0
1
2
3
4
5
7
543
–2
10 2
Tj=25°C
Tj=125°C
IC=15A IC=20A
IC=25A
1
10
7
5
4
3
2
0
10
7
5
4
30
10 23457 1
10 23457 2
10
3
2
Tj=25°C
Tj=125°C
IB1=120mA
VCC=300V
ts
ton
tf
IB2=–400mA
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT IC (A)
DC CURRENT GAIN hFE
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
BASE CURRENT IB (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
SATURATION VOLTAGE VCE (sat), VBE (sat) (V)SWITCHING TIME ton, ts, tf (µs)
COLLECTOR CURRENT IC (A)BASE-EMITTER VOLTAGE VBE (V)
BASE CURRENT IB (A) COLLECTOR CURRENT IC (A)
MITSUBISHI TRANSISTOR MODULES
QM20TD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Feb.1999
0
10
–3
10
–2
10
–1
10
0
10
1
10
2
10
1
10
0
10
–1
10
0
10
1
10
2
10
3
10
100
80
60
40
20
00 20 60 100 120 16040 80 140
10
30
50
70
90
1
10
7
5
4
3
2
0
10
7
5
4
3
3457
0
10
23
2
–1
10
2
3
45 7
1
10
t
s
T
j
=25°C
T
j
=125°C
I
B1
=120mA
V
CC
=300V
I
C
=20A
t
f
50
00 800
600200
30
40
20
10
400 700500100 300
T
j
=125°C
I
B2
=–0.5A
I
B2
=–3A
753275327532
7
5
3
2
7
5
3
2
7
5
3
2
444
200µs
5ms
DC
100µs
50µs
10ms
1ms
T
C
=25°C
2
10
1
10
7
5
4
3
2
0
10
7
5
4
3
2
0.4 0.8 1.2 1.6 2.0 2.4
T
j
=25°C
T
j
=125°C
753275327532
2.0
0
7532
444
4
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
NON–REPETITIVE
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
SWITCHING TIME ts, tf (µs)
COLLECTOR-EMITTER VOLTAGE VCE (V)BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE TC (°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
TIME (s)
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)DERATING FACTOR (%)COLLECTOR REVERSE CURRENT –IC (A)
MITSUBISHI TRANSISTOR MODULES
QM20TD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Zth (j–c) (°C/ W)
Feb.1999
0
10
1
10
–3
10
–2
10
–1
10
0
10
2
10
1
10 75432
0
10 75432
0
40
80
120
160
200
60
100
140
180
20
1
10
7
5
4
3
2
0
10
7
5
4
3
2
–1
10
0
10
23457
1
10
23457
2
10
2
10
1
10
0
10
I
rr
Q
rr
t
rr
T
j
=25°C
T
j
=125°C
V
CC
=300V
I
B1
=120mA
I
B2
=–400mA
753275327532
2.0
0
7532
0.8
0.4
1.2
1.6
2.4
2.8
3.2
Irr (A), Qrr (µc)
SURGE COLLECTOR REVERSE CURRENT
–ICSM (A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A)
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM20TD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Zth (j–c) (°C/ W)
trr (µs)
