HEWLETT* PACKARD | Surface Mount RF Schottky Barrier Diodes Technical Data Features Surface Mount SOT-23/SOT- 143 Package e Low Turn-On Voltage (As Low as 0.34 V at 1 mA) Low FIT (Failure in Time) Rate* Six-sigma Quality Level * Single, Dual and Quad Versions Tape and Reel Options Available * For more information see the Surface Mount Schottky Reliability Data Sheet. Description/Applications These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give the designer wide flexibility. Typical applications of these Schottky diodes are mixing, detecting, switching, sampling, clamping, and wave shaping. The HSMS-2800 series of diodes is optimized for high voltage applications. The HSMS-2810 series of diodes features very low flicker (1/f) noise. The 5966-0947E HSMS-28XX Series Package Lead Code Identification TOP VIEW COMMON COMMON SINGLE SERIES ANODE CATHODE 3A 35 35 35 EN 2a aT 2 1 28 Bi 24 #0 #2 #3 #4 UNCONNECTED RING BRIDGE CROSS-OVER PAIR QUAD QUAD QUAD 3 4 a3 4q B3 45 gd 45 Egy a eS 8 Vas ? V7? HSMS-2820 series of diodes is the best all-around choice for most applications, featuring low series resistance, low forward voltage at all current levels and good RF characteristics. The HSMS-2860 series is a high performance diode offering superior Vf and ultra-low capacitance. Note that HPs manufacturing techniques assure that dice found in pairs and quads are taken from adjacent sites on the wafer, assuring the highest degree of match. 3-36 EB tl a Tas? Ty 2Electrical Specifications T, = 25C, Single Diodel4! Nearest Minimum Maxi- Maximum | Maximum| Maxi- Typical Part Package Equivalent | Break- mum Forward Reverse mum Dynamic Num- Mark- Axial Lead down Forward Voltage Leakage | Capac- Resis- ber ing Lead Part No. Voltage Voltage Ve(V) @ | Ip (nA) @| itance tance HSMS5| | Codel3! | Code | Configuration 5082- Var (V) Ve (mV) I; (mA) Ve (V) | Cp pF) | Rp (Q)'5) 2800 Ag ( Single 2800 70 400 10 15 200 50 2.0 35 CUN5711) 2802 A2 z Series 2503 Ad a Common Anode 280-4 Ad 4 Common Cathode 2803 AS fi Uneonnected Pair 2807 AT 7 Ring Quad!" 2808 AS & Bridge Quad"! 2510 BO a Single 2810 20 400 10 35 200 15 1.2 15 (1N5712) 2812 B2 z Series 2813 B3 A Common Anode 2814 Ba 4 Common Cathode 2815 BS fi Unconnected Pair 2817 7 7 Ring Quadit! 2818 BR & Bridge Quad! 2820 co a Single 2835 15* 340 0.7 30 1001 1.0 12 c2 u Series C3 a Common Anode C4 d Common Cathode 2825 C5 a Unconnected Pair 2827 C7 7 Ring Quad!+! 2828 CS s Bridge Quad!"I 2829 cao Gq Cross-over Quad 2560 TO 0 Single None 5 320 0.6 30 _ 9.30 10 2802 Ti Z Series Pair 2863 T3 n Common Anode 2864 TA + Common Cathode 2565 TS A Tinconnected Pair Test Conditions Ig = 10 pA Ip = Wea 0V TpF=amA *Ip= EmAM! f= 100 pA 1.0 MHz! Notes: _ AV, for divdes in pairs and quads in 15 mV maximuni at 1 mA. L 2. AC yy for diodes in pairs and quads is 0.2 pF maximum. 3. Package marking code is in white. 4. Effective Carrier Lifetime (t) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA, except HSMS-282% which is measured at 20 mA. A. See section titled Quad Capacitance. 6. Ry = Ry +4.2Q at 25C and [, = 5 mA. 3-37Absolute Maximum Ratings!!! T, = 25C Symbol Parameter Value I Forward Current (1 ms Pulse) 1 Amp P, Total Device Dissipation 250 mW"! Py Peak Inverse Voltage Same as V,,, Tj Junction Temperature 150C Teg Storage Temperature -65 to 150C Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. 2. CW Power Dissipation at Ty pan = 25C. Derate to zero at maximum rate: temperature. Quad Capacitance Capacitance of Schottky diode quads is measured using an HP4271 LCR meter. This instrument effectively isolates individual diode branches from the others, allowing accurate capacitance measurement of each branch or each diode. The conditions are: 20 mV R.MLS. In a quad, the diagonal capaci- tance is the capacitance between points A and B as shown in the figure below. The diagonal capacitance is calculated using the following formula C,xC, + C3xCy C,+Cy Cg+Cy CplaGoNaL = The equivalent adjacent capacitance is the capacitance between points A and C in the figure below. This capacitance is calculated using the following formula 1 1 Capsacent = Ci + I 1 1 py Cy C3 Cy voltage at 1 MHz. HP defines this A measurement as CM, and it is Cis 0 S ) Cy This information does not apply equivalent to the capacitance of to cross-over quad diodes. the diode by itself. The equivalent c diagonal and adjacent capacitances can then be Ce NZ Ca calculated by the formulas given B below. SPICE Parameters Parameter | Units HSMS-280X HSMS-281X HSMS-282X HSMS-286X By Vv vi5) 25 6 7.0 Cy pF 16 11 0.7 0.18 Eg eV 0.69 0.69 0.69 0.69 ly A 10E-5 10E-5 10E-4 10-5 I; A 3x10E-8 4.8x10E-9 2.2x10E-8 5.0x10E-8 N 1.08 1.08 1.08 1.08 Ry Q 30 10 6.0 5.0 Pa Vv 0.65 0.65 0.65 0.65 Py 2 2 2 2 M 0.5 05 05 05Typical Parameters at T, = 25C (unless otherwise noted), Single Diode Ip - FORWARD CURRENT (mA) 0.01 i 0.102 0.3 04 05 06 0.7 08 09 Vg - FORWARD VOLTAGE (V) Figure 1. Typical Forward Current vs. Forward Voltage at Temperatures HSMS-2800 Series of oe z | 8 < E a = 10 b---- 10 & 5B FE f a Ff Ps & a 5 S QO < 2 5 < 2 a gS 1 1 & a = . ' ec + | 2 03 i 03> 03 04 O05 OS 06 O7 7 Ve - FORWARD VOLTAGE ()} Figure 4. Typical Vp Match, HSMS-2810 Series Pairs and Quads. S 100 10 = wd < 2 sf i E i i & a x wa a 10 g 9 E- 5 < g z 2 2 = . z + 2 1 ots 0.10 0.15 0.20 025 7 Vp - FORWARD VOLTAGE (V) Figure 7. Typical Vg Match, HSMS-2820 Series Pairs at Detector Bias Levels. 30 z z 10 10 z Ww i : | 4 | : : 2 | } 3 a AVg (Right Scate) z z : o ' a fs ire 4 J 0.3 0. 02 04 #06 O08 10 1.2 1.4 Vp - FORWARD VOLTAGE (V) Figure 2. Typical Vp Match, HSMS-2800 Series Pairs and Quads. Ip - FORWARD CURRENT (mA) 0.2 #03 04 O85 0.6 Ve - FORWARD VOLTAGE (V) 0.7 Figure 5. Typical Forward Current vs. Forward Voltage At Temperatures HSMS-2820 Series. 100 & FT bob ot = : 10 | ty & | e : w E 2 1- 5 a = . = 7 . evil I S$ E u \ | ; esc | 1 01 L 0.1 0.2 0.3 0.4 0.5 0.6 07 08 0.9 1.0 FORWARD VOLTAGE (V) Figure 8. Typical Forward Current vs. Forward Voltage at Temperature, HSMS-2860 Series. 3-39 we AV - FORWARD VOLTAGE DIFFERENCE (mv) 04 05 06 0.7 08 V_ - FORWARD VOLTAGE (V) Figure 3. Typical Forward Current vs. Forward Voltage at Temperatures-. HSMS-28 10 Series. 30 -_ AV (Right Scale) a ee tp - FORWARD CURRENT (mA) \V_ - FORWARD VOLTAGE DIFFERENCE (mV) 0.3 0.2 Po w 04 06 O08 1.0 14.2 *. V_- FORWARD VOLTAGE (V) Figure 6. Typical Vp Match, HSMS-2820 Series Pairs and Quads at Mixer Bias Leveis. 1 rane = o AVg (Right Scale) | Ip - FORWARD CURRENT (1A) 1 0.15 0.20 0 Vp - FORWARD VOLTAGE DIFFERENCE (mV) 1 1 0.05 2.25 0.10 Vp - FORWARD VOLTAGE (V) Figure 9. Typical Vp Match, HSMS-2860 Series Pairs at Detector Bias Levels.Typical Parameters, continued 100,000 F en a arr | 10,000 F ze fF 5 1000 w x 5 3 100[--- Ww an w 40 1, =#128C f Tys+75C \ L T2425 = 4 30 40 50 Vp ~- REVERSE VOLTAGE () Figure 10. Reverse Current vs. Reverse Voltage at Temperatures HSMS-2800 Series. HSMS-2800 SERIES HSMS-2810 SERIES == HSMS-2620 SERIES Rp DYNAMIC RESISTANCE (22) ip - FORWARD CURRENT (mA) Figure 13. Dynamic Resistance vs. Forward CurrentHSMS-2800 Series. C_~ CAPACITANCE (pF) Vp - REVERSE VOLTAGE Wy) Figure 16. Total Capacitance vs. Reverse VoltageHSMS-2820 Series. Applications Information Schottky Diode Fundamentals See the HSMS-280A series data sheet. 2 g T 8 g m \c omy 0 RTT Ty = +1250 T,s+75C Ty = 425C \q- REVERSE CURRENT (nA) gs Vp - REVERSE VOLTAGE (V) Figure 11. Reverse Carrent vs. Reverse Voltage at Temperatures HSMS-2810 Series. (Cy CAPACITANCE (pF) 10 20 30 40 50 Va REVERSE VOLTAGE (V) Figure 14. Total Capacitance vs. Reverse VoltageHSMS-2800 Series. 3-40 100,000 = 10,000 |. -2- ef p ~T] < & E z Ww ce c - o uw w c w 10% ~ op --Ty=4t25C = a FE ; Tystre 1 : = . = 1 : TT, = 425C a 2 4 6 Vj - REVERSE VOLTAGE () Figure 12. Reverse Current vs Reverse Voltage at Temperatures HSMS-2820 Series. ir & ww go z z & oO < a < ' ? O 0.25 - pet wet ry 0 1 0 2 4 6 8 10 12 14 16 Vp ~ REVERSE VOLTAGE :V) Figure 15. Total Capacitance vs. Reverse VoltageHSMS-2810 Series.Package Characteristics Lead Material 0.0.0... ccc cececseseeseseeeeees Alloy 42 Lead Finish ........ cect Tin-Lead 85/15% Max. Soldering Temperature .... 260C for 5 sec Min. Lead Strength. ............cccee 2 pounds pull Typical Package Inductance ......00...... 2 nH (opposite leads) Typical Package Capacitance ............ 0.08 pF (opposite leads) Package Dimensions Outline 23 (SOT-23) 1.02 (0.040) -_ ios oss 84 .cas ~ 0.37 PACKAGE _ 3 FA i MARKING ~~ | CODE su f ~ 1.40 (0.055) 2.65 (0.104 NRK 2.40 0.50 (0.024) 2 tu 0.45 (0.016) | we nore TOP VIEW bh 3.98 (0.120 1, 9.182 (0.008 ae = Fee 0.02 0.10 (0. 0.013 {e0008) 0.45 (0.0 SIDE VIEW DIMENSIONS ARE IN MILLIMETERS (INCHES) Outline 143 (SOT-143) END VIEW ak 0.92 (0.038) o~ O75 0.03) PACKAGE ar i cove ex 1.40 (0.055) 2.85 (0.104) aut B E _! 9.80 (0 024), 1 TT 0.54 (0.021 ; 2.04(0 060) | - aay 360120) 0-15 (0.006) 1.02 saben | 4 . a 0.10 a oe ner 69 (0.027) as (6.018) DIMENSIONS ARE IN MILLIMETERS (INCHES) 3-41 Device Orientation REEL CARRIER TAPE USER Rs : FEED ~ DIRECTION a gy COVER TAPE TOP VIEW END view 14mm r--2e] oO 0 Cond Figure 17. Option L31 for SOT-23 Packages. TOP VIEW 4mm END VIEW 0 I ene 7 qo Figure 18. Option L31 for SOT-143 Packages.