VUB72-12NOXT
3~ Rectifier Bridge + Brake Unit + NTC
Standard Rectifier Module
9~
6
7~
1~
10
4
5
2
NTC
11 12
Part number
VUB72-12NOXT
Backside: isolated
Features / Ad vantages: Applications: Package:
● Package with DCB ceramic base plate
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
● NTC
● 3~ Rectifier with brake unit
for drive inverters
V1-A-Pack
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 17 mm
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
● Isolation Voltage: V~
3600
RRM
1200
I75
FSM
600
DAV
V=V
A
A
=
=
I
3~
Rectifier
CES
1200
Brake
Chopper
I58
CE(sat)
1.85
C25
V=V
A
V
=
=
V
IXYS reserves the right to change limits, conditions and dimensions. 20130521cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUB72-12NOXT
V = V
kA²s
kA²s
kA²s
kA²s
Symbol Definition
Ratings
typ. max.
I
R
V
IA
V
F
1.10
R1.1 K/W
R
min.
75
V
RSM
V
40T = 25°C
VJ
T = °C
VJ
mA1.5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
110
P
tot
110 WT = 25°C
C
RK/W0.3
25
1200
max. non-repetitive reverse blocking voltage
reverse current
forward voltage drop
total power dissipation
Conditions Unit
1.38
T = 25°C
VJ
150
V
F0
V0.79T = °C
VJ
150
r
F
7.7 mΩ
V1.01T = °C
VJ
I = A
F
V
25
1.37
I = A
F
75
I = A
F
75
threshold voltage
slope resistance for power loss calculation only
µA
125
V
RRM
V1200
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
19
j
unction capacitance V = V;400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
150
600
650
1.30
1.26
A
A
A
A
510
550
1.80
1.76
1200
DAV
d =rectangular ⅓
bridge output current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
1300
IXYS reserves the right to change limits, conditions and dimensions. 20130521cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUB72-12NOXT
T = 125°C
V
CES
V1200
collector emitter voltage
collector emitter saturation voltage
T = 25°C
collector current A
58
A
C
VJ
Symbol Definition
Ratings
typ. max.min.Conditions Unit
40
V
V
CE(sat)
total power dissipation 195 W
collector emitter leakage current
6.5 V
turn-on delay time 70 ns
t
reverse bias safe operating area
A
V
GES
V±20
V
GEM
max. transient gate emitter voltage
T = °C
C
V
P
tot
gate emitter threshold voltage
RBSOA
105
±30
T = 125°C
T = 125°C
VJ
V
max. DC gate voltage
I
C25
I
C
T = 25°C
VJ
I = A; V = 15 V
CGE
T = 25°C
VJ
V
GE(th)
I
CES
I = mA; V = V
CGECE
V = V ; V = 0 V
CE CES GE
I
GES
T = 25°C
VJ
gate emitter leakage current V = ±20 V
GE
2.15
2.15
5.95.4
mA
0.1 mA
0.1
500
G(on)
total gate charge V = V; V = 15 V; I = A
CE
Q
GE C
110 nC
t
t
t
E
E
d(on)
r
d(off)
f
on
off
40 ns
250 ns
100 ns
3.8 mJ
4.1 mJ
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load
V = V; I = A
V = ±15 V; R = Ω
CE C
GE G
V = ±15 V; R = Ω
GE G
V = V
CEK
1200
short circuit safe operating area
µs
SCSOA
10T = 125°C
VJ
V = V; V = ±15 V
CE GE
short circuit duration
t
short circuit current
I
SC
SC
R = Ω; non-repetitive
G
140 A
R
thJC
thermal resistance junction to case
0.25
K/W
V
RRM
V1200
max. repe titive rev erse volt a g e T = 25°C
VJ
T = 25°C
forward current A
31
A
C
21
T = °C
C
I
F25
I
F
T = 25°C
forward voltage V
2.97
V
VJ
2.43T = 125°C
VJ
V
F
I = A
F
T = 25°C
reverse current mA
0.1
mA
VJ
0.5T = 125°C
VJ
I
RR RRM
T = 125°C
VJ
Q
I
t
rr
RM
rr
1.2 µC
18 A
130 ns
reverse recovery charge
max. reverse recovery current
reverse recovery time
V =
-di /dt = A/µs
I = A
F
F
R
R
thJC
thermal resistance junction to case 1.6 K/W
V = V
T = 25°C
C
T = 25°C
VJ
T = 125°C
VJ
VJ
35
1.5
35
35
25
25
27
27
27
600
900
400
600
I
CM
1.85
R
thCH
thermal resistance case to heatsink
0.65
K/W
0.55R
thCH
thermal resistance case to heatsink K/W
Brake IGBT
Brake Diode
600 V
80
80
80
80
nA
IXYS reserves the right to change limits, conditions and dimensions. 20130521cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUB72-12NOXT
Ratings
Part Number (Typ)
yywwA
Date Code Location
Lot No.:
2D Data Matrix
Package
T
VJ
°C
M
D
Nm2.5
mounting torque 2
T
stg
°C125
storage temperature -40
Weight g37
Symbol Definition typ. max.min.Conditions
virt ua l j un ctio n temp eratu re
Unit
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
6.0
12.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current 100 A
per terminal
150-40
terminal to terminal
V
1-A-Pack
Similar Part Package Voltage class
VUB72-16NOXT V1-A-Pack 1600
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
0 50 100 150
0
1000
2000
3000
4000
5000
6000
7000
R
[]
Typ. NTC resistance vs. temperature
T
C
[°C]
50/60 Hz, RMS; I ≤ 1 mA
ISOL
VUB72-12NOXT 510734Box 10VUB72-12NOXTStandard
3000
3600
ISOL
threshold voltage V0.79
mΩ
V
0 max
R
0 max
slope resistance * 6.5
1.1
40
1.16
43
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Rectifier Brake
IGBT
Brake
Diode
150 °C
* on die level
T = 25°
resistance kΩ
2.27
K
VJ
3560
R
25
B
25/50
2.2
2.13
temperature coefficient
Symbol Definition typ. max.min.Conditions Unit
Temperature Sensor NTC
IXYS reserves the right to change limits, conditions and dimensions. 20130521cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUB72-12NOXT
38
1
2
4
5
7
9
10
6
7
14
50
35
5,5
23,5
25,75
51,5
26
5,5
31,6
15
63
13
17
0,5
38,6
2
4x45°
R
R2
R1
±0,3
±0,2
±0,1
±0,15
+0,2
0,5
R
0,25
±0,25
3,3 ±0,5
±0,3
±0,3
7±0,3
14 ±0,3
11 ±0,3±0,3
11
8,3
Ø0,5
4,6
5
±1
±1
15,8 ±1
±1
9~
6
7~
1~
10
4
5
2
NTC
11 12
Outlines V1-A-Pack
IXYS reserves the right to change limits, conditions and dimensions. 20130521cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUB72-12NOXT
011
400
800
1200
1600
2000
V
F
[V]
I
F
[A]
0.4 0.6 0.8 1.0 1.2 1.4 1.6
0
20
40
60
80
100
10-3 10-2 10-1 100
200
300
400
500
1 10 100 1000 10000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0 25 50 75 100 125 150 1750 4 8 121620242832
0
8
16
24
32
0 25 50 75 100 125 150
0
20
40
60
80
100
I
FSM
[A]
t[s] t [ms]
I
2
t
[A
2
s]
P
tot
[W]
I
dAVM
[A] T
A
[°C]
I
F(AV)M
[A]
T
C
[°C]
Z
thJC
[K/W]
t[ms]
Constants for Z
thJC
calculation:
iR
th
(K/W) t
i
(s)
1 0.0607 0.0004
2 0.1230 0.00256
3 0.2305 0.0045
4 0.4230 0.0242
5 0.2628 0.1800
0.8 x V
RRM
50 Hz
T
VJ
=45°C
VR =0 V
R
thJA
:
0.6 KW
0.8 KW
1KW
2KW
4KW
8KW
DC =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
=
125°C
150°C
T
VJ
=25°C
T
VJ
=150°C T
VJ
=150°C
Fig. 1 Forward current vs.
voltage drop per diode
Fig. 2 Surge overload current
vs. time per diode
Fig. 3 I
2
tvs.timeperdiode
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
Fig. 5 Max. forward current vs.
case temperature per diode
Fi
g
. 6 Transient thermal im
p
edance
j
unction to case vs. time
p
er diode
DC =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
=45°C
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20130521cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUB72-12NOXT
0123
0
10
20
30
40
50
60
70
020406080
0
2
4
6
8
10
012345
0
10
20
30
40
50
60
70
V
CE
[V]
Q
G
[nC]
V
GE
[V]
9V
11 V
5 6 7 8 9 10111213
0
10
20
30
40
50
60
70
0 20406080100120140
0
5
10
15
20
13 V
20 40 60 80
3
4
5
6
E
[mJ]
E
on
Fig. 1 Typ. output characteristics
V
CE
[V]
I
C
[A]
VGE =15V
17 V
19 V
Fig. 2 Typ. output characteristics
I
C
[A]
Fig. 3 Typ. tranfer characteristics
V
GE
[V]
Fig. 4 Typ. turn-on gate charge Fig. 5 Typ. switching energy
versus collector current
E
off
Fig. 6 Typ. switching energy
versus gate resistance
R
G
[]
E
[mJ]
I
C
[A]
E
on
E
off
T
VJ
=125°C
T
VJ
= 25°C
VGE =15V
T
VJ
= 125°C
T
VJ
= 125°C
T
VJ
=25°C
I
C
=35A
V
CE
=600V
R
G
= 27
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
I
C
=35A
V
CE
=600 V
V
GE
= ±15 V
T
VJ
= 125°C
0.0001 0.001 0.01 0.1 1 10
0.001
0.01
0.1
1
[s]
[K/W]
Fi
g
.7 T
y
p
.transientthermalim
p
edance
Brake IGBT
IXYS reserves the right to change limits, conditions and dimensions. 20130521cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUB72-12NOXT
04080120160
0.0
0.5
1.0
1.5
2.0
Kf
TVJ [°C]
200 600 10000400800
0
10
20
30
40
50
0001001
0.0
0.5
1.0
1.5
2.0
2.5
3.0
01 2 3 4
0
5
10
15
20
25
30
35
40
IRM
[A]
Qrr
[μC]
IF
[A]
VF[V] diF/dt [A/μs] diF/dt [A/μs]
Fig. 1 Forward current
I
F
versus V
F
Fig. 2 Typ. reverse recov. charge
Q
r
versus di
F
/dt
Fig. 3 Typ. peak reverse current
I
RM
versus di
F
/dt
Fig. 4 Dynamic parameters
Q
r
,I
RM
versus T
VJ
I
RM
Q
r
IF=30A
IF=15A
IF=7.5A
TVJ = 25°C
100°C
150°C
IF= 30 A
IF= 15 A
IF=7.5 A
TVJ = 125°C
VR=800 V
TVJ =125°C
VR= 800 V
200 600 10000400800
100
120
140
160
180
0 200 400 600 800 1000
0
40
80
120
0.0
0.4
0.8
1.2
VFR
[V]
trr
[ns] [µs]
diF/dt [A/μs] -d iF/dt [A/μs]
Fig. 5 Typ. recovery time
t
rr
versus di
F
/dt
Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
TVJ = 125°C
VR= 800 V
IF= 30 A
IF= 15 A
IF= 7.5 A
TVJ =125°C
IF= 15 A
VR=800 V
0.00001 0.0001 0.001 0.01 0.1 1
0.001
0.01
0.1
1
10
[s]
[K/W]
Fig. 7 Transient thermal impedance junction to case
Brake Diode
IXYS reserves the right to change limits, conditions and dimensions. 20130521cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
