2N/PN/SST4117A Series N-Channel JFETs 2N4117A 2N4118A 2N4119A PN4117A PN4118A PN4119A SST4117 SST4118 SST4119 Product Summary Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (A) 4117 -0.6 to -1.8 -40 70 30 4118 -1 to -3 -40 80 80 4119 -2 to -6 -40 100 200 Features Benefits Applications Insignificant Signal Loss/Error Voltage with High-Impedance Source Low Power Consumption (Battery) Maximum Signal Output, Low Noise High Sensitivity to Low-Level Signals High-Impedance Transducer Amplifiers Smoke Detector Input Infrared Detector Amplifier Precision Test Equipment Ultra-Low Leakage: 0.2 pA Very Low Current/Voltage Operation Ultrahigh Input Impedance Low Noise Description The 2N/PN/SST4117A series of n-channel JFETs provide ultra-high input impedance. These devices are specified with a 1-pA limit and typically operate at 0.2 pA. This makes them perfect choices for use as high-impedance sensitive front-end amplifiers. TO-226AA (TO-92) TO-206AF (TO-72) S C 1 The hermetically sealed TO-206AF package allows full military processing per MIL-S-19500 (see Military Information). The TO-226A (TO-92) plastic package provides a low-cost option. The TO-236 (SOT-23) package provides surface-mount capability. Both the PN and SST series are available in tape-and-reel for automated assembly (see Packaging Information). D 1 4 S 2 3 D G G Top View 2N4117A 2N4118A 2N4119A TO-236 (SOT-23) D 1 S 2 2 3 G 3 Top View PN4117A PN4118A PN4119A Top View SST4117 (T7)* SST4118 (T8)* SST4119 (T9)* *Marking Code for TO-236 Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70239. Applications information may also be obtained via FaxBack, request document #70598. Siliconix S-52424--Rev. E, 14-Apr-97 1 2N/PN/SST4117A Series Absolute Maximum Ratings Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . -40V Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . 300_C Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Power Dissipation (case 25_C) : (2N Prefix)a . . . . . . . . . . . . . . . . . 300 mW (PN, SST Prefix)b . . . . . . . . . . . . 350 mW Storage Temperature : (2N Prefix) . . . . . . . . . . . . . . -65 to 175_C (PN, SST Prefix) . . . . . . . . . -55 to 150_C Operating Junction Temperature : (2N Prefix) . . . . . . . . . . . . . . -55 to 175_C (PN, SST Prefix) . . . . . . . . . -55 to 150_C Notes a. Derate 2 mW/_C above 25_C b. Derate 2.8 mW/_C above 25_C Specificationsa Limits 4117 Parameter 4118 4119 Symbol Test Conditions Typb V(BR)GSS IG = -1 A , VDS = 0 V -70 VGS(off) VDS = 10 V, ID = 1 nA -0.6 -1.8 -1 -3 -2 -6 VDS = 10 V, VGS = 0 V 30 90 80 240 200 600 A Min -40 Max Min Max Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Current IDSS VGS = -20 V VDS = 0 V VGS = -20 V VDS = 0 V TA = 150_C G t Reverse Gate R Current C t IGSS VGS = -10 V VDS = 0 V VGS = -10 V VDS = 0 V TA = 100_C Gate Operating Currentc Drain Cutoff Currentc Gate-Source Forward Voltagec -40 -40 V -0.2 -1 -1 -1 pA -0.4 -2.5 -2.5 -2.5 nA 2N PN -0.2 -1 -1 -1 SST -0.2 -10 -10 -10 PN/SST -0.03 -2.5 -2.5 -2.5 IG VDG = 15 V, ID = 30 A -0.2 ID(off) VDS = 10 V, VGS = -8 V 0.2 VGS(F) IG = 1 mA , VDS = 0 V 0.7 pA nA pA V Dynamic Common-Source Forward Transconductance gfs Common-Source Output Conductance gos Common-Source Input Capacitance Ciss i Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltagec Crss en 70 VDSS = 10 V, VGS = 0 V f = 1 kHz VDS = 10 V VGS = 0 V f = 1 MHz 80 250 100 330 S 2N/PN 1.2 SST 1.2 2N/PN 0.3 SST 0.3 VDS = 10 V, VGS = 0 V f = 1 kHz 210 3 5 10 1.5 1.5 1.5 nV Hz 15 Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. This parameter not registered with JEDEC. 2 pF NT Siliconix S-52424--Rev. E, 14-Apr-97 2N/PN/SST4117A Series Typical Characteristics Drain Current and Transconductance vs. Gate-Source Cutoff Voltage 300 800 240 180 600 gfs 120 400 IDSS 200 60 0 100 pA -2 -3 -4 100 mA 10 pA 10 mA IGSS @ 25_C 0.1 pA -5 0 18 24 30 VDG - Drain-Gate Voltage (V) On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage Common-Source Forward Transconductance vs. Drain Current 5 rDS 3 9 2 6 rDS @ ID = 10 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V f = 1 kHz 3 1 200 g os - Output Conductance ( mS) 4 12 0 0 -1 -2 -3 -4 VGS(off) = 2.5 V 160 TA = -55_C 120 25_C 125_C 80 40 VDS = 10 V f = 1 kHz 0 0.01 -5 0.1 1 ID - Drain Current (mA) VGS(off) - Gate-Source Cutoff Voltage (V) Output Characteristics Output Characteristics 100 500 VGS(off) = -0.7 V VGS(off) = -2.5 V 80 400 VGS = 0 V I D - Drain Current ( m A) I D - Drain Current ( m A) 12 6 VGS(off) - Gate-Source Cutoff Voltage (V) gos 0 IGSS @ 125_C TA = 25_C g fs - Forward Transconductance ( m S) 15 -1 10 mA 1 pA 0 0 rDS(on) - Drain-Source On-Resistance (k W ) 100 mA TA = 125_C I G - Gate Leakage IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz Gate Leakage Current 1 nA g fs - Forward Transconductance ( m S) I DSS - Saturation Drain Current (mA) 1000 -0.1 V 60 -0.2 V 40 -0.3 V -0.4 V 20 -0.5 V VGS = 0 V 300 -0.5 V 200 -1.0 V 100 -1.5 V -2.0 V 0 0 0 4 8 12 16 VDS - Drain-Source Voltage (V) Siliconix S-52424--Rev. E, 14-Apr-97 20 0 4 8 12 16 20 VDS - Drain-Source Voltage (V) 3 2N/PN/SST4117A Series Typical Characteristics (Cont'd) Transfer Characteristics VGS(off) = -0.7 V VDS = 10 V I D - Drain Current ( A) 80 60 TA = 125_C 40 Transconductance vs. Gate-Source Voltage 200 g fs - Forward Transconductance ( S) 100 25_C 20 -55_C 0 VGS(off) = -0.7 V 160 TA = -55_C 25_C 120 80 125_C 40 0 0 -0.2 -0.4 -0.6 -0.8 0 -1.0 -0.2 VGS - Gate-Source Voltage (V) VDS = 10 V I D - Drain Current ( A) 400 TA = -55_C 300 25_C 200 100 -0.6 -0.8 -1.0 Transconductance vs. Gate-Source Voltage 300 g fs - Forward Transconductance ( S) VGS(off) = -2.5 V -0.4 VGS - Gate-Source Voltage (V) Transfer Characteristics 500 125_C 0 VGS(off) = -2.5 V VDS = 10 V f = 1 kHz 240 TA = -55_C 180 25_C 120 125_C 60 0 0 -1 -3 -2 -4 0 -5 -1 -2 -3 -4 VGS - Gate-Source Voltage (V) VGS - Gate-Source Voltage (V) Circuit Voltage Gain vs. Drain Current Common-Source Input Capacitance vs. Gate-Source Voltage 100 -5 2.0 g fs R L f = 1 MHz 80 C iss - Input Capacitance (pF) AV 1 R g L os A V - Voltage Gain VDS = 10 V f = 1 kHz Assume VDD = 15 V, VDS = 5 V R L 10 V ID 60 VGS(off) = -0.7 V 40 20 1.6 VDS = 0 V 1.2 10 V 0.8 0.4 -2.5 V 0 0 0.01 0.1 ID - Drain Current (mA) 4 1 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) Siliconix S-52424--Rev. E, 14-Apr-97 2N/PN/SST4117A Series Typical Characteristics (Cont'd) Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage Equivalent Input Noise Voltage vs. Frequency 200 VDS = 10 V (nV / Hz) f = 1 MHz 0.4 0.3 VDS = 0 V 0.2 e n - Noise Voltage C rss - Reverse Feedback Capacitance (pF) 0.5 10 V 0.1 160 ID = 10 mA 120 80 VGS = 0 V 40 0 0 0 -4 -8 -12 -16 -20 10 100 VGS - Gate-Source Voltage (V) 100 k On-Resistance vs. Drain Current rDS(on) - Drain-Source On-Resistance (k W ) 20 VGS(off) = -2.5 V g os - Output Conductance ( mS) 10 k f - Frequency (Hz) Output Conductance vs. Drain Current 2 1k TA = -55_C 25_C 1 125_C VDS = 10 V f = 1 kHz VGS(off) = -0.7 V 16 12 8 -2.5 V 4 TA = 25_C 0 0 0.01 0.1 ID - Drain Current (mA) Siliconix S-52424--Rev. E, 14-Apr-97 1 0.01 0.1 1 ID - Drain Current (mA) 5