2N/PN/SST4117A Series
Siliconix
S-52424—Rev. E, 14-Apr-97 1
N-Channel JFETs
2N4117A PN4117A SST4117
2N4118A PN4118A SST4118
2N4119A PN4119A SST4119
Product Summary
Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (A)
4117 –0.6 to –1.8 –40 70 30
4118 –1 to –3 –40 80 80
4119 –2 to –6 –40 100 200
Features Benefits Applications
Ultra-Low Leakage: 0.2 pA
Very Low Current/Voltage Operation
Ultrahigh Input Impedance
Low Noise
Insignificant Signal Loss/Error Voltage
with High-Impedance Source
Low Power Consumption (Battery)
Maximum Signal Output, Low Noise
High Sensitivity to Low-Level Signals
High-Impedance Transducer
Amplifiers
Smoke Detector Input
Infrared Detector Amplifier
Precision Test Equipment
Description
The 2N/PN/SST4117A series of n-channel JFETs provide
ultra-high input impedance. These devices are specified with
a 1-pA limit and typically operate at 0.2 pA. This makes them
perfect choices for use as high-impedance sensitive front-end
amplifiers.
The hermetically sealed TO-206AF package allows full
military processing per MIL-S-19500 (see Military
Information). The TO-226A (TO-92) plastic package provides
a low-cost option. The TO-236 (SOT-23) package provides
surface-mount capability. Both the PN and SST series are
available in tape-and-reel for automated assembly (see
Packaging Information).
G
S
TO-206AF
(TO-72)
D
Top View
2N4117A
2N4118A
2N4119A
C
1
23
4
D
G
Top View
PN4117A
PN4118A
PN4119A
TO-226AA
(TO-92)
S
1
2
3
D
S
G
TO-236
(SOT-23)
2
3
1
Top View
SST4117 (T7)*
SST4118 (T8)*
SST4119 (T9)*
*Marking Code for TO-236
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70239.
Applications information may also be obtained via FaxBack, request document #70598.
2N/PN/SST4117A Series
2 Siliconix
S-52424—Rev. E, 14-Apr-97
Absolute Maximum Ratings
Gate-Source/Gate-Drain Voltage –40V. . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Gate Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature : (2N Prefix) –65 to 175_C. . . . . . . . . . . . . .
(PN, SST Prefix) –55 to 150_C. . . . . . . . .
Operating Junction Temperature :
(2N Prefix) –55 to 175_C. . . . . . . . . . . . . .
(PN, SST Prefix) –55 to 150_C. . . . . . . . .
Lead Temperature (1/16” from case for 10 sec.) 300_C. . . . . . . . . . . . . . .
Power Dissipation (case 25_C) :
(2N Prefix)a300 mW. . . . . . . . . . . . . . . . .
(PN, SST Prefix)b350 mW. . . . . . . . . . . .
Notes
a. Derate 2 mW/_C above 25_C
b. Derate 2.8 mW/_C above 25_C
Specificationsa
Limits
4117 4118 4119
Parameter Symbol Test Conditions TypbMin Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage V(BR)GSS IG = –1 A , VDS = 0 V –70 –40 –40 –40 V
Gate-Source Cutoff Voltage VGS(off) VDS = 10 V, ID = 1 nA –0.6 –1.8 –1 –3 –2 –6
Saturation Drain Current IDSS VDS = 10 V, VGS = 0 V 30 90 80 240 200 600 A
VGS = –20 V
VDS = 0 V –0.2 –1 –1 –1 pA
Gt R C t
I
VGS = –20 V
VDS = 0 V
TA = 150_C
2N –0.4 –2.5 –2.5 –2.5 nA
G
ate
R
everse
C
urrent
I
GSS VGS = –10 V PN –0.2 –1 –1 –1
pA
GS
VDS = 0 V SST –0.2 –10 –10 –10
pA
VGS = –10 V
VDS = 0 V
TA = 100_CPN/SST –0.03 –2.5 –2.5 –2.5 nA
Gate Operating CurrentcIGVDG = 15 V, ID = 30 A –0.2
pA
Drain Cutoff CurrentcID(off) VDS = 10 V, VGS = –8 V 0.2
pA
Gate-Source Forward VoltagecVGS(F) IG = 1 mA , VDS = 0 V 0.7 V
Dynamic
Common-Source
Forward Transconductance gfs VDS = 10 V, VGS = 0 V 70 210 80 250 100 330
S
Common-Source
Output Conductance gos
SGS
f = 1 kHz 3 5 10
S
Common-Source
Ci
2N/PN 1.2
Input Capacitance
C
iss VDS = 10 V
VGS =0V
SST 1.2
pF
Common-Source
C
VGS
=
0
V
f = 1 MHz 2N/PN 0.3 1.5 1.5 1.5
pF
Reverse Transfer Capacitance
C
rss SST 0.3
Equivalent Input Noise VoltagecenVDS = 10 V, VGS = 0 V
f = 1 kHz 15 nV⁄
√Hz
Notes
a. TA = 25_C unless otherwise noted. NT
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. This parameter not registered with JEDEC.
2N/PN/SST4117A Series
Siliconix
S-52424—Rev. E, 14-Apr-97 3
Typical Characteristics
Gate Leakage Current
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
Common-Source Forward Transconductance
vs. Drain Current
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
Output Characteristics
1000
0–5–4–3–2–1
800
006 30
gfs
IDSS
TA = 125_C
TA = 25_C
100 mA
IGSS @ 25_C
100 mA
Output Characteristics
500
400
300
100
0
–0.5 V
–1.0 V
–2.0 V
–1.5 V
VGS = 0 V
15
0–3–5–4–2–1
12
9
6
3
00.01 0.1 1
200
160
120
40
0
5
4
3
2
1
0
rDS @ ID = 10 mA, VGS = 0 V
gos @ VDS = 10 V, VGS = 0 V
f = 1 kHz
rDS
gos
TA = –55_C
125_C
VDS = 10 V
f = 1 kHz
100
0168420
80
60
20
0
VGS = 0 V
–0.5 V
–0.4 V
–0.3 V
–0.2 V
–0.1 V
– Gate Leakage
IG
VGS(off) – Gate-Source Cutoff Voltage (V)
VDS – Drain-Source Voltage (V)
VDG – Drain-Gate Voltage (V)
ID – Drain Current (mA)VGS(off) – Gate-Source Cutoff Voltage (V)
VDS – Drain-Source Voltage (V)
600
400
200
12 18 24
80
25_C
VGS(off) = –0.7 V VGS(off) = –2.5 V
20040
12 0 16842012
IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDS = 10 V, VGS = 0 V
f = 1 kHz
300
240
180
120
60
0
10 mA
0.1 pA
1 pA
10 pA
100 pA
1 nA
IGSS @ 125_C
VGS(off) = 2.5 V
10 mA
– Saturation Drain Current (
IDSS mA)
rDS(on) – Drain-Source On-Resistance (k )W
– Drain Current (
IDmA)
– Drain Current (
IDmA) S)gfs – Forward Transconductance (m
S)gos – Output Conductance (mS)gfs – Forward Transconductance (m
2N/PN/SST4117A Series
4 Siliconix
S-52424—Rev. E, 14-Apr-97
Typical Characteristics (Cont’d)
300
240
180
60
0
T ransconductance vs. Gate-Source V oltageTransfer Characteristics
T ransconductance vs. Gate-Source V oltageTransfer Characteristics
Common-Source Input Capacitance
vs. Gate-Source Voltage
Circuit Voltage Gain vs. Drain Current
500
0–4–5–2–1
0
TA = –55_C
125_C
100
0 –0.4–0.2 –0.8 –1.0
80
60
20
0
200
160
120
40
0
TA = 125_C
–55_C
TA = –55_C
125_C
VDS = 10 V VDS = 10 V
f = 1 kHz
VDS = 10 V VDS = 10 V
f = 1 kHz
TA = –55_C
125_C
0.1 10.01
100
0
VGS(off) = –0.7 V
–2.5 V
RL10 V
ID
Assume VDD = 15 V, VDS = 5 V
2.0
0
f = 1 MHz
VDS = 0 V
10 V
VGS – Gate-Source Voltage (V)
ID – Drain Current (mA)
VGS – Gate-Source Voltage (V)
VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V)
VGS – Gate-Source Voltage (V)
AV– Voltage Gain
– Input Capacitance (pF)Ciss
VGS(off) = –0.7 V VGS(off) = –0.7 V
VGS(off) = –2.5 V VGS(off) = –2.5 V
40
80
60
20
40
80
25_C
25_C
–0.6 0 –0.4–0.2 –0.8 –1.0–0.6
–3 0 –4 –5–2–1 –3
0 –16 –20–8–4 –12
120
400
300
100
200
1.6
1.2
0.4
0.8
AV
gfs RL
1RLgos
25_C
25_C
– Drain Current (
IDA)
– Drain Current (
IDA)
S)gfs – Forward Transconductance (S)gfs – Forward Transconductance (
2N/PN/SST4117A Series
Siliconix
S-52424—Rev. E, 14-Apr-97 5
Typical Characteristics (Cont’d)
2
1
00.01 0.1 1
Equivalent Input Noise Voltage vs. Frequency
ID – Drain Current (mA)
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
On-Resistance vs. Drain CurrentOutput Conductance vs. Drain Curr ent
VDS = 10 V
f = 1 kHz
0.5
0 –8 –20–16–4
0.4
0.3
0.1
0
f = 1 MHz
VDS = 0 V
10 V
10 100 1 k 100 k10 k
200
0
VDS = 10 V
ID = 10 mA
VGS = 0 V
TA = –55_C
125_C
– Reverse Feedback Capacitance (pF)Crss
ID – Drain Current (mA)
VGS – Gate-Source Voltage (V) f – Frequency (Hz)
0.2
160
120
40
80
–12
VGS(off) = –2.5 V
20
00.01 0.1 1
16
12
8
4
VGS(off) = –0.7 V
–2.5 V
TA = 25_C
25_C
nVen/Hz
√)(– Noise Voltage
rDS(on) – Drain-Source On-Resistance (k )W
S)gos – Output Conductance (m
