HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6310-B
Issued Date : 1992.09.09
Revised Date : 2000. 10.01
Page No. : 1/4
HSMC Product Specifi cation
HMPSA55
PNP SILICON TRANSISTOR
Description
The HMPSA55 is designed for using in a amplifier applications.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperatur e................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................... 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... -60 V
VCEO Collector to Emitter Voltage.................................................................................... -60 V
VEBO Emitter to Base Voltage ............................................................................................ -4 V
IC Collector Current ..................................................................................................... -500 mA
Characteristics (Ta=25 °C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -60 - - V IC=-100uA, IE=0
BVCEO -60 - - V IC=-1mA, IB=0
BVEBO -4 - - V IE=-100uA, IC=0
ICBO - - -100 nA VCB=-60V, IE=0
ICEO - - -100 nA VCE=-60V, IB=0
*VCE(sat) - - -0.25 V IC=-100mA, IB=-10mA
VBE(on) - - -1.2 V IC=-100mA, VCE=-1V
*hFE1 50 - - IC=-10mA, VC E= - 1V
*hFE2 50 - - IC=-100mA, VCE=-1V
fT 50 - - MHz IC=-100mA, VCE=-1V, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6310-B
Issued Date : 1992.09.09
Revised Date : 2000. 10.01
Page No. : 2/4
HSMC Product Specifi cation
Characteristics Curve
Cu rr ent & Coll ector Current
10
100
1000
0.1 1 10 100 1000
Coll e c to r Cu rrent- IC (mA)
Current Gain-h FE
VCE=1V
Saturation Voltage & Collect or Current
10
100
1000
0.1 1 10 100 1000
Coll e c to r Cu rrent- IC (mA)
Satura t ion Voltage ( m V)
VCE(sat) @ IC=10IB
On Vol tage & Col l ect or Cur rent
100
1000
10000
0.1 1 10 100 1000
Coll e c to r Cu rrent- IC (mA)
On Voltage (mV)
VBE(on) @ VCE=1V
Cutoff Fr equency & Collect or Cu rrent
10
100
1000
1 10 100 1000
Coll e c to r Cu rrent- IC (mA)
Cutoff Frequency (MHz )
VCE=2V
Capacit ance & Rever se-Biased Vol t age
1
10
100
0.1 1 10 100
R everse Biased Vol t age ( V)
Cap a c ita nce (pF)
Cob
Safe Operati ng Area
1
10
100
1000
10000
1 10 100
Forward Vol t a ge-VCE (V)
Coll e c to r Cu rrent- IC (mA)
PT=100ms
PT=1s
PT=1ms
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6310-B
Issued Date : 1992.09.09
Revised Date : 2000. 10.01
Page No. : 3/4
HSMC Product Specifi cation
PD-Ta
0
100
200
300
400
500
600
700
0 20 40 60 80 100 120 140 160
Ambient Temper at ure- Ta(oC)
Power Dissipation -PD(mW)
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6310-B
Issued Date : 1992.09.09
Revised Date : 2000. 10.01
Page No. : 4/4
HSMC Product Specifi cation
TO-92 Dimension
*:Typical
Inches Millimeters Inches Millimeters
DIM Min. Max. Min. Max. DIM Min. Max. Min. Max.
A 0.1704 0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704 0.1902 4.33 4.83 H - *0.1000 - *2.54
C 0.5000 - 12.70 - I - *0.0500 - *1.27
D 0.0142 0.0220 0.36 0.56 α1-*5°-*5°
E - *0.0500 - *1.27 α2-*2°-*2°
F 0.1323 0.1480 3.36 3.76 α3-*2°-*2°
Notes : 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controll i ng dimens ion : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing m ethod, please contact your l ocal HSMC sal es office.
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin famil y, flammability solid burning class:UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its produc ts without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liabilit y for any cons equence of customer product design, infringem ent of patents, or application assistance.
Head Office And Factory :
• Head Office (Hi-Sincerit y Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Tai wan R.O. C.
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
• Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax : 886-3-5982931
• Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industri al Park Hs in-Chu Taiwan. R.O. C
Tel : 886-3-5977061 Fax : 886-3-5979220
31
A
D
B
C
Iα1
E
F
α2
α3
G
H
2
Style : Pin 1.Em itter 2.Bas e 3.C ol lec tor
3-Lead TO-92 Plastic Package
HSMC Packa
g
e Code : A
Marking :
HSMC Logo
Part Number
Date Code
Product Series
Rank
Laser Mark
HSMC Logo
Part Number
Product Series
Ink Mark
