Sep-01-2003
1
BFS469L6
123
4
5
6
NPN Silicon RF TWIN Transistor
Preliminary data
• Low voltage/ low current applications
• Ideal for VCO modules and low noise amplifiers
• Low noise figure: TR1: 1.1dB at 1.8 GHz
TR2: 1.5 dB at 1.8 GHz
• World's smallest SMD 6-pin leadless package
• Built in 2 transitors (TR1: die as BFR460L3,
TR2: die as BFR949L3)
6 4
6 4
!
"#$
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFS469L6 AD 1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
TR1
TR2
VCEO
4.5
10
V
Collector-emitter voltage
TR1
TR2
VCES
15
20
Collector-base voltage
TR1
TR2
VCBO
15
20
Emitter-base voltage
TR1
TR2
VEBO
1.5
1.5
Collector current
TR1
TR2
IC
50
70
mA
Sep-01-2003
2
BFS469L6
Maximum Ratings
Parameter Symbol Value Unit
Base current
TR1
TR2
IB
5
7
mA
Total power dissipation1)
TR1, TS ≤ 104°C
TR2, TS ≤ 100°C
Ptot
200
250
mW
Junction temperature
TR1
TR2
Tj
150
150
°C
Ambient temperature
TR1
TR2
TA
-65 ... 150
-65 ... 150
Storage temperature
TR1
TR2
Tstg
-65 ... 150
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point2)
TR1
TR2
RthJS
≤ 230
≤ 200
K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
Sep-01-2003
3
BFS469L6
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
TR1, IC = 1 mA, IB = 0
TR2, IC = 1 mA, IB = 0
V(BR)CEO
4.5
10
5
-
-
-
V
Collector-emitter cutoff current
TR1, VCE = 15 V , VBE = 0
TR1, VCE = 20 V, VBE = 0
ICES
-
-
-
-
10
10
µA
Collector-base cutoff current
TR1, VCB = 5 V, IE = 0
TR2, VCB = 10 V, IE = 0
ICBO
-
-
-
-
100
100
nA
Emitter-base cutoff current
TR1, VEB = 0,5 V, IC = 0
TR2, VEB = 1 V, IC = 0
IEBO
-
-
-
-
1
0.1
µA
DC current gain-
TR1, IC = 20 mA, VCE = 3 V
TR2, IC = 5 mA, VCE = 3 V
hFE
-
100
130
140
-
200
-
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
TR1, IC = 30 mA, VCE = 3 V, f = 1 GHz
TR2, IC = 15 mA, VCE = 6 V, f = 1 GHz
fT
16
tbd
22
9
-
-
GHz
Collector-base capacitance
TR1, VCB = 3 V, f = 1 MHz, emitter grounded
TR2, VCB = 10 V, f = 1 MHz, emitter grounded
Ccb
-
-
0.33
0.3
0.5
0.45
pF
Collector emitter capacitance
TR1, VCE = 3 V, f = 1 MHz, base grounded
TR1, VCE = 10 V, f = 1 MHz, base grounded
Cce
-
-
0.17
0.17
-
-
Emitter-base capacitance
TR1, VEB = 0,5 V, f = 1 MHz, collector grounded
TR2, VEB = 0,5 V, f = 1 MHz, collector grounded
Ceb
-
-
0.57
0.75
-
-
Sep-01-2003
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BFS469L6
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Noise figure
TR1, IC=5mA, VCE = 3 V, f = 1.8 GHz, ZS = ZSopt
TR1, IC=5mA, VCE = 3 V, f = 3 GHz, ZS = ZSopt
TR2, IC=3mA, VCE = 6 V, f = 1 GHz, ZS = ZSopt
TR2, IC=3mA, VCE = 8 V, f = 1.8 GHz, ZS = ZSopt
F
-
-
-
-
1.1
1.4
1
1.3
-
-
-
-
dB
Power gain, maximum stable1)
TR1, IC = 20 mA, VCE = 3 V, ZS=ZSopt, ZL=ZLopt,
f = 1.8 GHz
TR2, IC = 10 mA, VCE = 8 V, ZS=ZSopt, ZL=ZLopt,
f = 0.9 GHz
TR2, IC = 10 mA, VCE = 8 V, ZS=ZSopt, ZL=ZLopt,
f = 1.8 GHz
Gms
-
-
-
14.5
20
14
-
-
-
Power gain, maximum available1)
TR1, IC = 20mA, VCE = 3 V, ZS = ZSopt,
ZL = ZLopt , f = 1,8 GHz
Gma - 10 -
Transducer gain
TR1, IC=20mA, VCE = 3 V, ZS=ZL=50Ω,
f=1.8GH
z
TR1, IC=20mA, VCE = 3 V, ZS=ZL=50Ω, f=3GHz
TR2, IC=15mA, VCE = 6 V, ZS=ZL=50Ω, f=1GHz
TR2, IC=10mA, VCE = 8 V, ZS=ZL=50Ω, f=1.8GH
z
|S21e|2
-
-
-
-
12.5
9
15,5
11
-
-
-
-
Third order intercept point at output2)
TR1, VCE=3V, IC=20mA, ZS=ZL=50Ω,
f=1.8GHz
TR2, VCE=8V, IC=10mA, ZS=ZL=50Ω,
f=1.8GHz
IP3
-
-
28
24.5
-
-
dBm
1dB Compression point at output
TR1, IC=20mA, VCE=3V, ZS=ZL=50Ω,
f=1.8GHz
TR1, IC=10mA, VCE=8V, ZS=ZL=50Ω,
f=1.8GHz
P-1dB
-
-
12
6
-
-
1Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e|
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
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81669 München
© Infineon Technologies AG 2004.
All Rights Reserved.
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