BFS469L6 NPN Silicon RF TWIN Transistor 4 Preliminary data * Low voltage/ low current applications 3 5 * Ideal for VCO modules and low noise amplifiers 2 6 * Low noise figure: TR1: 1.1dB at 1.8 GHz 1 TR2: 1.5 dB at 1.8 GHz * World's smallest SMD 6-pin leadless package * Built in 2 transitors (TR1: die as BFR460L3, TR2: die as BFR949L3) $ 6 4 # 6 4 " ! ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFS469L6 Marking Pin Configuration Package AD 1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value TR1 4.5 TR2 10 Collector-emitter voltage Unit V VCES TR1 15 TR2 20 Collector-base voltage VCBO TR1 15 TR2 20 Emitter-base voltage VEBO TR1 1.5 TR2 1.5 Collector current mA IC TR1 50 TR2 70 1 Sep-01-2003 BFS469L6 Maximum Ratings Parameter Symbol Base current IB Value mA TR1 5 TR2 7 Total power dissipation1) mW Ptot TR1, TS 104C 200 TR2, TS 100C 250 Junction temperature C Tj TR1 150 TR2 150 Ambient temperature Unit TA TR1 -65 ... 150 TR2 -65 ... 150 Storage temperature T stg TR1 -65 ... 150 TR2 -65 ... 150 Thermal Resistance Parameter Symbol Junction - soldering point 2) RthJS Value Unit K/W TR1 230 TR2 200 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 2 Sep-01-2003 BFS469L6 Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V V(BR)CEO TR1, IC = 1 mA, IB = 0 4.5 5 - TR2, IC = 1 mA, IB = 0 10 - - Collector-emitter cutoff current A ICES TR1, V CE = 15 V , VBE = 0 - - 10 TR1, V CE = 20 V, V BE = 0 - - 10 Collector-base cutoff current nA ICBO TR1, V CB = 5 V, IE = 0 - - 100 TR2, V CB = 10 V, IE = 0 - - 100 Emitter-base cutoff current A IEBO TR1, V EB = 0,5 V, IC = 0 - - 1 TR2, V EB = 1 V, I C = 0 - - 0.1 DC current gain- hFE - TR1, IC = 20 mA, VCE = 3 V - 130 - TR2, IC = 5 mA, VCE = 3 V 100 140 200 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT GHz TR1, IC = 30 mA, VCE = 3 V, f = 1 GHz 16 22 - TR2, IC = 15 mA, VCE = 6 V, f = 1 GHz tbd 9 - Collector-base capacitance pF Ccb TR1, V CB = 3 V, f = 1 MHz, emitter grounded - 0.33 0.5 TR2, V CB = 10 V, f = 1 MHz, emitter grounded - 0.3 0.45 TR1, V CE = 3 V, f = 1 MHz, base grounded - 0.17 - TR1, V CE = 10 V, f = 1 MHz, base grounded - 0.17 - TR1, V EB = 0,5 V, f = 1 MHz, collector grounded - 0.57 - TR2, V EB = 0,5 V, f = 1 MHz, collector grounded - 0.75 - Collector emitter capacitance Unit Cce Emitter-base capacitance Ceb 3 Sep-01-2003 BFS469L6 Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) dB Noise figure F TR1, IC=5mA, V CE = 3 V, f = 1.8 GHz, ZS = ZSopt - 1.1 - TR1, IC=5mA, V CE = 3 V, f = 3 GHz, ZS = ZSopt - 1.4 - TR2, IC=3mA, V CE = 6 V, f = 1 GHz, ZS = ZSopt - 1 - TR2, IC=3mA, V CE = 8 V, f = 1.8 GHz, ZS = ZSopt - 1.3 - - 14.5 - - 20 - - 14 - - 10 - TR1, IC=20mA, V CE = 3 V, ZS=ZL=50, f=1.8GHz - 12.5 - TR1, IC=20mA, V CE = 3 V, ZS=ZL=50, f=3GHz - 9 - TR2, IC=15mA, V CE = 6 V, ZS=ZL=50, f=1GHz - 15,5 - TR2, IC=10mA, V CE = 8 V, ZS=ZL=50, f=1.8GHz - 11 - Power gain, maximum stable 1) G ms TR1, IC = 20 mA, V CE = 3 V, ZS=ZSopt, Z L=ZLopt, f = 1.8 GHz TR2, IC = 10 mA, V CE = 8 V, ZS=ZSopt, Z L=ZLopt, f = 0.9 GHz TR2, IC = 10 mA, V CE = 8 V, ZS=ZSopt, Z L=ZLopt, f = 1.8 GHz Power gain, maximum available1) G ma TR1, IC = 20mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt , f = 1,8 GHz |S 21e|2 Transducer gain Third order intercept point at output 2) dBm IP 3 TR1, V CE=3V, IC=20mA, ZS=ZL=50, f=1.8GHz - 28 - TR2, V CE=8V, IC=10mA, ZS=ZL=50, f=1.8GHz - 24.5 - TR1, IC=20mA, V CE=3V, ZS=ZL=50, f=1.8GHz - 12 - TR1, IC=10mA, V CE=8V, ZS=ZL=50, f=1.8GHz - 6 - 1dB Compression point at output P -1dB 1G 1/2 ma = |S21e / S12e| (k-(k-1) ), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz 4 Sep-01-2003 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen (c) Infineon Technologies AG 2004. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.Infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. 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