PN200
PN200A MMBT200
MMBT200A
PNP General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 68.
Absolute Maximum Ratings* T A = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics T A = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collec t or-Emitter V ol tage 45 V
VCBO Collec t or-Bas e Voltage 60 V
VEBO Emi tter-Base Volt age 6.0 V
ICCollect or Current - Cont i nuous 500 mA
TJ, Tstg Operating and Storage Junc tion Temperature Range -55 to +150 °C
Symbol Characteristic Max Units
PN200
PN200A *MMBT200
*MMBT200A
PDTotal Device Dissipation
Derate above 25°C625
5.0 350
2.8 mW
mW/°C
RθJC Thermal Resist ance, Junction to Case 83.3 °C/W
RθJA Thermal Resist ance, Junction t o Ambient 200 357 °C/W
SOT-23
Mark: N2 / N2A
CBETO-92
C
B
E
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
PN200 / MMBT200 / PN200A / MMBT200A
