2N5089 Silicon NPN Transistor High Gain, Low Noise Amp Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W Thermal Resistance, Junction-to-Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W Note 1 RthJA is measured with the device soldered into a typical printed circuit board. Electrical Characteristics: (TA = +25C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0, Note 2 25 - - V Colletor-Base Breakdown Voltage V(BR)CBO IC = 100A, IE = 0 30 - - V Emitter Cutoff Current ICBO VEB(off) = 4.5Vdc, IC = 0 - - 100 nA Collector Cutoff Current ICBO VCB = 30V, IE = 0 - 1.0 50 nA hFE VCE = 5V, IC = 100A 400 1200 - VCE = 5V, IC = 1mA 450 - - VCE = 5V, IC = 10mA 400 - - ON Characteristics DC Current Gain Collector-Emitter Saturation Voltage VCE(sat) IC = 10mA, IB = 0.5mA - - 0.5 V Base-Emitter ON Voltage (Note 2) VBE(on) VCE = 5V, IC = 10mA - - 0.8 V Note 2 Pulse test: Pulse Width 300s, Duty Cycle 2.0% Electrical Characteristics: (TA = +25C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit VCE = 5V, IC = 500A, f = 20MHz 50 - - MHz Small-Signal Characteristics Current Gain-Bandwidth Product fT Collector-Base Capacitance Cobo VCB = 5V, IE = 0, f = 1MHz - - 4.0 pF Emitter-Base Capacitance Ceb VCB = 5V, IE = 0, f = 1MHz - - 10 pF Small Signal Current Gain hfe VCE = 5V, IC = 1mA, f = 1kHz 450 - 1800 - Noise Figure NF VCE = 5V, IC = 100A, RS = 1k, f = 1kHz - - 2.0 dB .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max