2N5089
Silicon NPN Transistor
High Gain, Low Noise Amp
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO 25V......................................................
Collector−Base Voltage, VCBO 30V.......................................................
Emitter−Base Voltage, VEBO 3.0V........................................................
Continuous Collector Current, IC50mA...................................................
Total Device Dissipation (TA = +25°C), PD625mW.........................................
Derate above 25°C 5mW/°C.......................................................
Total Device Dissipation (TC = +25°C), PD1.5W............................................
Derate above 25°C 12mW/°C......................................................
Operating Junction Temperature Range, TJ−55° to +150°C..................................
Storage Temperature Range, Tstg −55° to +150°C..........................................
Thermal Resistance, Junction−to−Case, RthJC 83.3°C/W....................................
Thermal Resistance, Junction−to−Ambient (Note 1), RthJA 200°C/W..........................
Note 1 RthJA is measured with the device soldered into a typical printed circuit board.
Electrical Characteristics: (TA = +25°C unless otherwise noted)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector−Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0, Note 2 25 − − V
Colletor−Base Breakdown Voltage V(BR)CBO IC = 100μA, IE = 0 30 − − V
Emitter Cutoff Current ICBO VEB(off) = 4.5Vdc, IC = 0 − − 100 nA
Collector Cutoff Current ICBO VCB = 30V, IE = 0 −1.0 50 nA
ON Characteristics
DC Current Gain hFE VCE = 5V, IC = 100μA 400 1200 −
VCE = 5V, IC = 1mA 450 − −
VCE = 5V, IC = 10mA 400 − −
Collector−Emitter Saturation Voltage VCE(sat) IC = 10mA, IB = 0.5mA − − 0.5 V
Base−Emitter ON Voltage (Note 2) VBE(on) VCE = 5V, IC = 10mA − − 0.8 V
Note 2 Pulse test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
Electrical Characteristics: (TA = +25°C unless otherwise noted)
Parameter Symbol Test Conditions Min Typ Max Unit
Small−Signal Characteristics
Current Gain−Bandwidth Product fTVCE = 5V, IC = 500μA, f = 20MHz 50 − − MHz
Collector−Base Capacitance Cobo VCB = 5V, IE = 0, f = 1MHz − − 4.0 pF
Emitter−Base Capacitance Ceb VCB = 5V, IE = 0, f = 1MHz − − 10 pF
Small Signal Current Gain hfe VCE = 5V, IC = 1mA, f = 1kHz 450 −1800 −
Noise Figure NF VCE = 5V, IC = 100μA, RS = 1kΩ,
f = 1kHz
− − 2.0 dB
.021 (.445) Dia Max
E B C
Seating Plane
.135 (3.45) Min
.100 (2.54)
.050 (1.27)
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max
.210
(5.33)
Max
.500
(12.7)
Min
.165
(4.2)
Max
