2SC3279
NPN Silicon
Epitaxial Transistors
Features
• High DC Current Gain and excellent hFE Linearity
hFE(1) =140-600 (VCE
=1.0V, IC=0.5A)
hFE
2
=70 (Min.), 200 (Typ.) (VCE
=1.0V, IC=2.0A)
Maximum Ratings
Symbol Rating Rating Unit
VCEO Collector-Emitter Voltage 10 V
VCES Collector-Emitter Voltage 30 V
VCBO Collector-Base Voltage 30 V
VEBO Emitter-Base Voltage 6.0 V
IC
Collector Current - DC
Pulsed (1)
2.0
5.0 A
IBBase Current 0.2 A
P
CCollector power dissipation 750 mW
TJJunction Temperature -55 to +150 OC
TSTG Storage Temperature -55 to +150 OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Typ Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Voltage
(I
C=10mAdc, IB=0)
10 --- --- Vdc
V(BR)EBO Collector-Emitter Voltage
(I
E=1.0mAdc, IC=0) 6.0 --- --- Vdc
ICBO Collector Cutoff Current
(VCB=30Vdc,I
E=0)
--- --- 0.1 uAdc
IEBO Emitter Cutoff Current
(VEB=6.0Vdc, I
C=0)
--- --- 0.1 uAdc
ON CHARACTERISTICS
hFE(1) DC Current Gain (2)
(I
C=0.5Adc, VCE=1.0Vdc) 140 --- 600 ---
hFE(2) DC Current Gain
(I
C=2.0Adc, VCE=1.0Vdc) 70 200 --- ---
VCE(sat) Collector Saturation Voltage
(I
C=2.0Adc, I
B=50mAdc) --- 0.2 0.5 Vdc
VBE Base Saturation Voltage
(I
C=2.0Adc, VCE=1.0Vdc) --- 0.86 1.5 Vdc
fTTransition Frequency
(VCE=1.0Vdc, I
C=0.5Adc) 100 150 --- MHz
Cob Collector Output Capacitance
(VCB=10Vdc, I
E=0, f=1.0MHz) --- 27 --- pF
(1) Pulse Width=10 ms (Max.), Duty Cycle=30% (Max.)
2
hFE(1) Classification L: 140-240, M: 200-330, N: 300-450, P: 420-600
TO-92
AE
B
C
D
G
Revision: 5 2007/03/02
omponents
20736 Marilla Street Chatsworth
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MCC
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .170 .190 4.33 4.83
B .170 .190 4.30 4.83
C .550 .590 13.97 14.97
D .010 .020 0.36 0.56
E .130 .160 3.30 3.96
G .010 .104 2.44 2.64
TM
Micro Commercial Components
x Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
EC B
www.mccsemi.com
1 of 3
2SC3279-L
2SC3279-M
2SC3279-N
2SC3279-P