IS201, IS202, IS203, IS204,
ISD201, ISD202, ISD203, ISD204,
ISQ201, ISQ202, ISQ203, ISQ204
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
12/3/03
DB91021m-AAS/A4
0.5
7.62
7.0
6.0
1.2
OPTION G
7.62
APPROVALS
ll UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
lVDE 0884 in 3 available lead form : -
- STD
- G form
- SMD approved to CECC 00802
lIS20* Certified to EN60950 by the
following Test Bodies :-
Nemko - Certificate No. P01102464
Fimko - Certificate No. FI18166
Semko - Reference No. 0202037/01-22
Demko - Certificate No. 311158-01
lBSI approved - Certificate No. 8001
DESCRIPTION
The IS20*, ISD20*, ISQ20* series of optically
coupled isolators consist of infrared light
emitting diodes and NPN silicon photo
transistors in space efficient dual in line plastic
packages.
FEATURES
lOptions :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
lHigh Isolation Voltage (5.3kVRMS ,7.5kVPK )
lHigh BVCEO (70V min)
lAll electrical parameter 100% tested
lCustom electrical selections available
APPLICATIONS
lComputer terminals
lIndustrial systems controllers
lSignal transmission between systems of
different potentials and impedances
10.16
9.16
7.0
6.0
7.62
1.2
13°
Max
0.5
2.54
0.5 0.26
0.5
3
4
1
5
8
2
1
3 4
6
Dimensions in mm
HIGH DENSITY
PHOTOTRANSISTOR OPTICALLY
COUPLED ISOLATORS
SURFACE MOUNT
OPTION SM
10.16
7.0
6.0
1.2
7.62
3.0
0.5
0.26
2.54
0.5 0.26
13°
Max
3.0
13°
Max
3.35
4.0
3.0
3.0
20.32
19.32 4.0
3.0
4.0
3.0
3.35
3.35
2.54
0.26
36
4 5
27
14
15
18
7.62
6.62
2 5
16
13
12
11
6
10
7
9
IS201
IS202
IS203
IS204
ISD201
ISD202
ISD203
ISD204
ISQ201
ISQ202
ISQ203
ISQ204
10.46
9.86
0.6
0.1 1.25
0.75
DB91021m-AAS/A4
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF)1.2 1.65 VIF = 50mA
Reverse Current (IR)10 µA VR = 4V
Output Collector-emitter Breakdown (BVCEO)70 VIC = 1mA
( Note 2 )
Emitter-collector Breakdown (BVECO)6VIE = 100µA
Collector-emitter Dark Current (ICEO)50 nA VCE = 10V
Coupled Current Transfer Ratio (CTR) (Note 2)
IS201, ISD201, ISQ201 75 %10mA IF , 10V VCE
IS201, ISD201, ISQ201 10 %1mA IF , 10V VCE
IS202, ISD202, ISQ202 125 250 %10mA IF , 10V VCE
IS202, ISD202, ISQ202 30 %1mA IF , 10V VCE
IS203, ISD203, ISQ203 225 450 %10mA IF , 10V VCE
IS203, ISD203, ISQ203 50 %1mA IF , 10V VCE
IS204, ISD204, ISQ204 200 400 %10mA IF , 10V VCE
IS204, ISD204, ISQ204 100 %1mA IF , 10V VCE
Collector-emitter Saturation Voltage VCE(SAT) 0.2 0.4 V10mA IF , 2mA IC
Input to Output Isolation Voltage VISO 5300 VRMS See note 1
7500 VPK See note 1
Input-output Isolation Resistance RISO 5x1010 VIO = 500V (note 1)
Output Turn on Time tON 3.0 µsIF = 10mA
Output Turn off Time tOFF 2.5 µsVCE = 5V, RL = 75
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
12/3/03
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -40°C to + 125°C
Operating Temperature -25°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 50mA
Reverse Voltage 6V
Power Dissipation 70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO 70V
Emitter-collector Voltage BVECO 6V
Power Dissipation 150mW
POWER DISSIPATION
Total Power Dissipation 170mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
DB91021m-AAS/A4
12/3/03
50
-30 0 25 50 75 100 125
Ambient temperature TA ( °C )
150
0
200
Ambient temperature TA ( °C )
Collector power dissipation PC (mW)
60
30
20
10
0
40
50
-30 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
-30 0 25 50 75 100
Ambient temperature TA ( °C )
Collector-emitter saturation voltage VCE(SAT) (V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
100
0
0.04
0.08
0.12
0.16
0.20
0.24
0.28
IF = 10mA
IC = 2mA
Forward current IF (mA)
Ambient temperature TA ( °C )
0
0.5
1.0
1.5 IF = 1mA
VCE = 10V
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative current transfer ratio
-30 0 25 50 75 100
Ambient temperature TA ( °C )
0
0.5
1.0
1.5 IF = 10mA
VCE = 10V
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative current transfer ratio
-30 0 25 50 75 100
1 2 5 10 20 50
0
0.4
0.6
0.8
1.0
1.2
0.2
1.4
VCE = 10V
TA = 25°C
Relative current transfer ratio
Relative Current Transfer Ratio
vs. Forward Current
Forward current IF (mA)