
DB91021m-AAS/A4
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF)1.2 1.65 VIF = 50mA
Reverse Current (IR)10 µA VR = 4V
Output Collector-emitter Breakdown (BVCEO)70 VIC = 1mA
( Note 2 )
Emitter-collector Breakdown (BVECO)6VIE = 100µA
Collector-emitter Dark Current (ICEO)50 nA VCE = 10V
Coupled Current Transfer Ratio (CTR) (Note 2)
IS201, ISD201, ISQ201 75 %10mA IF , 10V VCE
IS201, ISD201, ISQ201 10 %1mA IF , 10V VCE
IS202, ISD202, ISQ202 125 250 %10mA IF , 10V VCE
IS202, ISD202, ISQ202 30 %1mA IF , 10V VCE
IS203, ISD203, ISQ203 225 450 %10mA IF , 10V VCE
IS203, ISD203, ISQ203 50 %1mA IF , 10V VCE
IS204, ISD204, ISQ204 200 400 %10mA IF , 10V VCE
IS204, ISD204, ISQ204 100 %1mA IF , 10V VCE
Collector-emitter Saturation Voltage VCE(SAT) 0.2 0.4 V10mA IF , 2mA IC
Input to Output Isolation Voltage VISO 5300 VRMS See note 1
7500 VPK See note 1
Input-output Isolation Resistance RISO 5x1010 ΩVIO = 500V (note 1)
Output Turn on Time tON 3.0 µsIF = 10mA
Output Turn off Time tOFF 2.5 µsVCE = 5V, RL = 75Ω
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -40°C to + 125°C
Operating Temperature -25°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 50mA
Reverse Voltage 6V
Power Dissipation 70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO 70V
Emitter-collector Voltage BVECO 6V
Power Dissipation 150mW
POWER DISSIPATION
Total Power Dissipation 170mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )