DATA SHEET Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam Leads Applications x Detectors Features x Available in both P-type and N-type low barrier silicon x Low 1/f noise x Bonded junctions for reliability x Planar passivated beam-lead and chip construction x Packages rated MSL1, 260 qC per JEDEC J-STD-020) Skyworks offers lead (Pb)-free, RoHS (Restriction of Hazardous Substances) compliant packaging. The choice of N- and P-type silicon allows the designer to optimize the silicon material for the intended application: x Doppler mixers and high-sensitivity detectors benefit from using the low noise characteristics of the P-type silicon. x Low conversion loss mixers and biased detectors can be designed using standard N-type material. Description Applications Skyworks packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in the Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. P-type silicon is used to obtain superior 1/f noise characteristics. N-type silicon is also available. These diodes are categorized by Tangential Signal Sensitivity (TSS) for detector applications in four frequency ranges: S, X, Ku, and Ka bands. However, they can also be used as modulators, high-speed switches, and low-power limiters. Packaged diodes are suitable for use in waveguide, coaxial, and stripline applications. Beam-lead and chip diodes can also be mounted in a variety of packages or on special customer substrates. Unmounted beam-lead diodes are especially well suited for use in Microwave Integrated Circuit (MIC) applications. Mounted beamlead diodes can be easily used in MIC, stripline, or other such circuitry. These "universal chips" are designed for a high degree of device reliability in both commercial and industrial uses. The offset bond pad assures that no mechanical damage occurs at the junction during the wire bonding. Additionally, the 4 mil bond pad eliminates performance variation due to bonding, improves efficiency during manual operations, and is ideal for automated assembly. TSS is a parameter that describes a diode's detector sensitivity. It is defined as the amount of signal power, below a one-milliwatt reference level, required to produce an output pulse with an amplitude sufficient to raise the noise fluctuations by an amount equal to the average noise level. TSS is approximately 4 dB above the minimum detectable signal. The P-type Schottky diodes in this Data Sheet are optimized for low noise in the 1/f region. They require a small forward bias (to reduce video resistance) if efficient operation is required. The bias not only increases sensitivity but also reduces parameter variation due to temperature change. Video impedance is a direct function of bias and follows the 26/l (mA) relationship. This is important to pulse fidelity, since the video impedance together with the detector output capacitance affects the effective amplifier bandwidth. Bias does, however, increase typical noise, particularly in the 1/f region. Therefore, it should be kept as low as possible (typically 5 to 50 A). Skyworks Solutions, Inc. * Phone [781] 376-3000 * Fax [781] 376-3100 * sales@skyworksinc.com * www.skyworksinc.com 200847B * Skyworks Proprietary Information * Products and Product Information are Subject to Change Without Notice * October 2, 2009 1 SILICON SCHOTTKY BARRIER DIODES Assembly and Handling Procedure Wire Bonding Die Attach Methods Two methods can be used to connect wire, ribbon, and wire mesh to the chips: Universal chips are compatible with both eutectic and conductive epoxy die attach methods. Eutectic composition preforms of Au/Sn or Au/Ge are useful when soldering devices in circuit. Gold/silicon eutectic die attachments can be accomplished by scrubbing the chip directly to the gold plated bonding area. Epoxy die attachments with silver or gold filled conductive epoxies can also be used when thermal heat sinking is not a requirement. x Thermocompression x Ballbonding Skyworks recommends use of pure gold wire (0.7 to 1.25 mil diameter). Electrical and physical specifications for the silicon Schottky barrier diodes are provided in Tables 1 through 6. SPICE model parameters are defined in Table 7. Typical performance characteristics are shown in Figures 1 through 4. Typical video detector circuits are shown in Figure 5. Table 1. Electrical Specifications: Beam-Lead P-Type Detector Schottky Diodes Electrical Characteristics Frequency Band Part Number TSS (dBm) (Note 1) RV () CJ @ 0 V (pF) VF @ 1 mA (mV) VB @ 10 mA (V) Test Frequency (GHz) Outline Drawing Typ. Min. Max. Max. X DDB2503-000 50 500 700 0.15 200-350 2 10.00 491-006 Ku DDB2504-000 48 500 700 0.10 200-350 2 16.00 491-006 K DDB2265-000 50 (Note 2) 800 (Note 2) 1200 (Note 2) 0.10 300-450 3 24.15 491-006 Note 1: Bias = 50 A Video bandwidth = 10 MHz. Note 2: Bias = 30 A Table 2. Epoxy and Hermetic Packaged Beam-Lead P-Type Detector Schottky Diodes Part Numbers/Outline Drawings Epoxy Stripline 250 Epoxy Stripline 230 Hermetic Stripline 220 DDB2503-250 DDB2503-230 DDB2503-220 DDB2504-250 DDB2504-230 DDB2504-220 DDB2265-250 DDB2265-230 DDB2265-220 Skyworks Solutions, Inc. * Phone [781] 376-3000 * Fax [781] 376-3100 * sales@skyworksinc.com * www.skyworksinc.com 2 October 2, 2009 * Skyworks Proprietary Information * Products and Product Information are Subject to Change Without Notice * 200847B DATA SHEET * SILICON SCHOTTKY BARRIER DIODES Table 3. Electrical Specifications: P-Type Detector Schottky Diode Universal Chips Electrical Characteristics Frequency Band Part Number TSS (dBm) (Note 1) CJ @ 0 V (pF) VF @ 1 mA (mV) RT @ 10 mA () VB @ 10 mA (V) Outline Drawing Min. Max. Max. Min. Ku CDB7620-000 40 0.15 250-350 30 2 571-006 K CDB7619-000 50 (Note 2) 0.10 300-450 40 3 571-006 Note 1: Bias = 50 A Video bandwidth = 10 MHz RV = 2800 Note 2: Bias = 30 A Table 4. Hermetic Packaged P-Type Detector Schottky Diode Chips Part Numbers/Outline Drawings Hermetic Pill 207 Hermetic Pill 203 Hermetic 109 CDB7620-207 CDB7620-203 CDB7620-109 CDB7619-207 CDB7619-203 CDB7619-109 Table 5. Electrical Specifications: N-Type Detector Schottky Diode Chips Electrical Characteristics Frequency Band Part Number Barrier VF @ 1 mA (mV) CJ @ 0 V (pF) RT @ 10 mA () VB @ 10 A (V) Max. Max. Min. Outline Drawing X CDF7623-000 Low 240-300 0.30 10 2 571-011 K CDF7621-000 Low 270-350 0.10 20 2 571-011 Ku CME7660-000 Medium 350-450 0.15 10 3 571-011 K CDE7618-000 Medium 375-500 0.10 20 3 571-011 Ku CDP7624-000 Medium/High 450-575 0.15 15 3 571-011 Table 6. Hermetic Packaged Beam-Lead N-Type Detector Schottky Diode Chips Part Numbers/Outline Drawings Hermetic Ceramic Pill 207 Hermetic Ceramic Pill 203 Hermetic Surface Mount 108 CDF7623-207 CDF7623-203 CDF7623-108 CDF7621-207 CDF7621-203 CDF7621-108 CME7660-207 CME7660-203 CME7660-108 CDE7618-207 CDE7618-203 CDE7618-108 CDP7624-207 CDP7624-203 CDP7624-108 Skyworks Solutions, Inc. * Phone [781] 376-3000 * Fax [781] 376-3100 * sales@skyworksinc.com * www.skyworksinc.com 200847B * Skyworks Proprietary and Confidential information * Products and Product Information are Subject to Change Without Notice * October 2, 2009 3 DATA SHEET * SILICON SCHOTTKY BARRIER DIODES Table 7. SPICE Model Parameters Parameter Part Number Units CDF7620-000 CDF7621-000 CDC7623-000 CDB7619-000 IS A 4E-08 9E-08 1.1E-07 3E-08 RS 4 6 5 30 N - 1.20 1.10 1.10 1.04 TT sec 1E-11 1E-11 1E-11 1E-11 CJO pF 0.15 0.11 0.20 0.11 M - 0.35 0.30 0.30 0.32 EG eV 0.69 0.69 0.69 0.69 XTI - 2 2 2 2 FC - 0.5 0.5 0.5 0.5 BV V 10 2.5 2.5 3.0 IBV A 1E-05 1E-05 1E-05 1E-05 VJ V 0.495 0.510 0.510 0.540 10-1 10-1 10-2 10-2 Forward Current (A) Forward Current (A) Typical I-V Characteristics 10-3 10-4 10-3 10-4 10-5 10-5 10-6 10-6 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Forward Voltage (V) Figure 1. CDF7621-000 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Forward Voltage (V) Figure 2. CDB7619-000 Skyworks Solutions, Inc. * Phone [781] 376-3000 * Fax [781] 376-3100 * sales@skyworksinc.com * www.skyworksinc.com 4 October 2, 2009 * Skyworks Proprietary Information * Products and Product Information are Subject to Change Without Notice * 200847B DATA SHEET * SILICON SCHOTTKY BARRIER DIODES Typical Performance Data 10000.00 RL = 1 M 10000.00 RL = 10 k RL = 100 RL = 100 k 100.00 RL = 10 10.00 RL = 1 Voltage Output (mV) RL = 1 k 1000.00 Voltage Output (mV) RL = 1 k 1000.00 RL = 1 M 50 A 100.00 5 A RL = 10 50 A 10.00 5 A 1.00 1.00 Test Conditions: f = 9.375 GHz DC Bias = 0 0.10 -30 -20 -10 0 +10 Test Conditions: f = 9.375 GHz 5 A +20 0.10 -30 -20 -10 0 +10 +20 Power Input (dBm) Power Input (dBm) Figure 3. Voltage Output vs Power Input As a Function of Load Resistance Figure 4. Voltage Output vs Power Input As a Function of Load Resistance and Bias Shipping Information Unbiased RF Bypass Input Video Output Load Resistor DC Return Biased Input Skyworks silicon Schottky barrier diodes are provided in waffle packs. Devices can also be packaged on gel pack carriers. Wafer Shipment for Whole Wafer Bias Supply RF Bypass Individual Chips Video Output Packaging options include delivery for devices on film frame, in which wafer is sawn on wafer gel pack for uncut, unsawn wafer. Package dimensions are provided in Figures 6 through 15. Load Resistor DC Return Multi-Octave-High Sensitivity Unbiased RF Bypass Input Video Output Load Resistor Bias Supply Biased RF Bypass Input Video Output Load Resistor 50 : Broadband-Low Sensitivity Figure 5. Typical Video Detector Circuits Skyworks Solutions, Inc. * Phone [781] 376-3000 * Fax [781] 376-3100 * sales@skyworksinc.com * www.skyworksinc.com 200847B * Skyworks Proprietary and Confidential information * Products and Product Information are Subject to Change Without Notice * October 2, 2009 5 DATA SHEET * SILICON SCHOTTKY BARRIER DIODES 0.35 Max. Typ. 0.43 0.05 Cathode Indicator 0.60 Typ. 0.35 Max. Typ. 0.45 0.05 2 Plcs. Bottom View 1 2 1.83 0.10 Gold-Plated Kovar Lid 1.00 (Max.) XX 1.43 0.10 0.15 Typ. Cathode Indicator Top View Side View All dimensions in mm Figure 6. -108 Package Dimensions 0.35 Max. Typ. 0.43 0.05 0.60 Typ. 2 1 0.35 Max. Typ. Cathode Pin 1 Indicator 0.45 0.05 2 Plcs. Bottom View 1 1.83 0.10 2 1.00 (Max.) Gold-Plated Kovar Lid XX 1.43 0.10 0.15 Typ. Top View Side View All dimensions in mm Figure 7. -109 Package Dimensions Skyworks Solutions, Inc. * Phone [781] 376-3000 * Fax [781] 376-3100 * sales@skyworksinc.com * www.skyworksinc.com 6 October 2, 2009 * Skyworks Proprietary Information * Products and Product Information are Subject to Change Without Notice * 200847B DATA SHEET * SILICON SCHOTTKY BARRIER DIODES Schematic N-Type 1 1 0.050 (1.27 mm) 0.040 (1.02 mm) 2 2 0.055 (1.40 mm) 0.051 (1.30 mm) Dia. S1569 Figure 8. -203 Package Dimensions 0.064 (1.63 mm) 0.060 (1.52 mm) Dia. 2 Plcs. 0.086 (2.18 mm) Max. Dia. Schematic P-type Schematic N-type Metal Ceramic 0.200 (5.08 mm) Nom. 0.076 (2.10 mm) 0.006 (1.78 mm) Metal 0.062 (1.63 mm) 0.002 (1.52 mm) 2 Plcs Figure 9. -207 Package Dimensions Schematic 2 1 -011 (220) 0.185 (4.70 mm) 0.145 (3.68 mm) 3 Plcs. 0.068 (1.73 mm) 0.064 (1.63 mm) Dia. Colored Dot Denotes Cathode 0.070 (1.78 mm) Sq. 0.005 (0.13 mm) 0.003 (0.08 mm) 3 Plcs. 0.022 (0.56 mm) 0.018 (0.46 mm) 3 Plcs. 0.042 (1.07 mm) 0.028 (0.71 mm) Figure 10. -220 Package Dimensions Skyworks Solutions, Inc. * Phone [781] 376-3000 * Fax [781] 376-3100 * sales@skyworksinc.com * www.skyworksinc.com 200847B * Skyworks Proprietary and Confidential information * Products and Product Information are Subject to Change Without Notice * October 2, 2009 7 DATA SHEET * SILICON SCHOTTKY BARRIER DIODES Schematic 1 2 Colored Dot Denotes Cathode 0.090 (2.29 mm) Min. 2 Plcs. 1 2 0.013 (0.33 mm) 0.017 (0.43 mm) 2 Plcs. 50 Deg. 40 Deg. Epoxy Encapsulation Au-Plated Leads 0.030 (0.76 mm) Max. 0.003 (0.08 mm) 0.005 (0.13 mm) 0.008 (0.20 mm) 0.012 (0.30 mm) Ceramic Base 0.051 (1.30 mm) 0.055 (1.40 mm) Figure 11. -230 Package Dimensions Schematic 1 2 0.100 (2.54 mm) Dia. 0.090 (2.28 mm) 0.110 (2.79 mm) 2 Plcs. Colored Dot Denotes Cathode 1 2 0.018 (0.45 mm) 0.122 (0.55 mm) 2 Plcs. 50 Deg. 40 Deg. Epoxy Encapsulation Au-Plated Leads 0.018 (0.45 mm) 0.122 (0.55 mm) 0.003 (0.08 mm) 0.005 (0.13 mm) 0.050 (1.27 mm) Max. Figure 12. -250 Package Dimensions 0.013 (0.33 mm) 0.011 (0.28 mm) 0.011 (0.28 mm) 0.009 (0.23 mm) 0.006 (0.15 mm) 0.004 (0.10 mm) 2 Plcs. 0.009 (0.23 mm) 0.007 (0.18 mm) 0.006 (0.015 mm) 0.003 (0.005 mm) 0.009 (0.23 mm) 0.007 (0.18 mm) 0.0025 (0.06 mm) Max. Top View Schematic Figure 13. 491-006 Package Dimensions Skyworks Solutions, Inc. * Phone [781] 376-3000 * Fax [781] 376-3100 * sales@skyworksinc.com * www.skyworksinc.com 8 October 2, 2009 * Skyworks Proprietary Information * Products and Product Information are Subject to Change Without Notice * 200847B DATA SHEET * SILICON SCHOTTKY BARRIER DIODES Cathode/Bonding Pad Diameter 0.0035-0.0045 0.0095 (0.241 mm) 0.0115 (0.292 mm) 0.0095 (0.241 mm) 0.0115 (0.292 mm) 0.0085 (0.216 mm) 0.0065 (0.165 mm) Backside Contact (Anode) Gold Metallization Figure 14. 571-006 Package Dimensions Anode/Bonding Pad Diameter 0.0035-0.0045 0.0095 (0.241 mm) 0.0115 (0.292 mm) 0.0095 (0.241 mm) 0.0115 (0.292 mm) 0.0085 (0.216 mm) 0.0065 (0.165 mm) Figure 15. 571-011 Package Dimensions Skyworks Solutions, Inc. * Phone [781] 376-3000 * Fax [781] 376-3100 * sales@skyworksinc.com * www.skyworksinc.com 200847B * Skyworks Proprietary and Confidential information * Products and Product Information are Subject to Change Without Notice * October 2, 2009 9 DATA SHEET * SILICON SCHOTTKY BARRIER DIODES Copyright (c) 2002-2009 Skyworks Solutions, Inc. 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Skyworks Solutions, Inc. * Phone [781] 376-3000 * Fax [781] 376-3100 * sales@skyworksinc.com * www.skyworksinc.com 10 October 2, 2009 * Skyworks Proprietary Information * Products and Product Information are Subject to Change Without Notice * 200847B