| Ordering number: EN 20993 No.2093 | 2SA1479/2803789 PNP/NPN Epitaxial Planar Type Silicon Transistors HIGH-DEFINITION CRT DISPLAY Vipeo Output APPLICATIONS Applications - High-definition CRT display - Color TV chroma output, high breakdown voltage drivers Features - High breakdown voltage (Vorp2300V) - Excellent high frequency characteristic (c,.=1.8pF(typ)) . Adoption of MBIT process - No insulator required for mounting, which contributes to reducing the cost and the number of manufacturing processes. , - Plastic-covered heat sink facilitating high-density mounting Directly interchange able with TO-126 because the package is designed based on the conventional package dimensions ( ): 2Sa1479 Absolute Maximum Ratings at Tas=25C: . unit Collector. to-Base Voltage Von (-)300 v Collector-to-Emitter Voltage Von (-)300 OV Emitter-to-Base Voltage Vepo (-)5 Vv Collector Current Ie (-}100 mA Peak Collector Current top (-}200 mA Collector Dissipation Po 1.5 W Te=25C 7 W Junction Temperature Tj 150 % Storage Temperature Tstg -55 to +150 % Electrical Characteristics at Ta=25C min typ max unit Collector Cutoff Current Ippo, Vop=(-) 200V,I,=0 (+)0.1 pa Emitter Cutoff Current TEBO Vep=(-)4V,1,=0 (-)0.1 pA DC Current Gain hep Vept(-)10V,Ip=(-)10mA = 40% 320% Gain-Bandwidth Product = fp Voge (-)30V,Ig=(~) 10ma 70 _ MHz C-E Saturation Voltage = Vop(gat) Ig=(~)20mA,I_=(-) 2ma (-)0.6 Vv B-E Saturation Voltage = Vpr(sat) Ic=(-)20mA,Ip=(-) 2mA (-)1.0 Continued on next page. Package Dimensions 2042A Cunit: mm) 11.0 . 1.7 Cn im nm [ | 84 ia} ey PE = coll nm m C: Collector 3 E: Emitter = mee SANYO? TOLZEML _. SANYO Electric Co.,Ltd. Semiconductor Business Headquarters: : ~ 7 _- TOKYO OFFICE Tokyo Bidg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN: =) 4OBTTA,TS No.2093-1/425A1479/2S8C3789 Continued from preceding page. min typ max unit C-B Breakdown Voltage Vopr)cpo Ic=(~) 10pA, I,=0 (-)300 Vv C-E Breakdown Voltage VBR) CEO Ip=(-) 1mA, Ryp=oo (-) 300 V E-B Breakdown Voltage Veprjepo Ip=(-) 10pa,Ip=0 (-)5 Vv Output Capacitance Cob Vop(-)30V, f= 1MHz 2.6 pF (3.1) Reverse Transfer Che Vope(-) 30V, f= 1MHz 1.8 pF Capacitance (2.3) ; The 28A1479/2S8C3789 are classified by 10mA hp; as follows: yo Cc 80 | 60 D 120 | 100 E 200 | 160 F 320 Ic -V Ic - Vee" a o-7 ' 4 66 OLA qt 2-5 a 30 LA BL & -4 o ~20 LA h -9 o as] g -2 4 ~1O MA a o = uu Ip=o 0 B 0 =2 -& -6 ~%} Collector. to- Emitter Voltage, Vop - V Ic - V 4 to Aga I wl ! . n 30 HA 20 A -2 10/A Collector Current,I, - mA Ip=o 0 0 40 =80 =I 7160 ~20 Collector-to-Emitter Voltage, Vop - V lc - VBE 120 28A 1479, Vop= 5 B 10 ' ELA ~80 a of LAI & ~60 d - 5 CYS] & a a a i TE] a o et ma -2 8 J Go G ~0.2 -O4 -0.6 -0.8 , Base=to- Emitter Voltage, Vap -. -10 oa 2803789 Collector Current , I, ~ mA ~ tah Pd ut n ~~ IR=9 2 Collector. to-Emitter Voltage, Vor - Vv Ic - Vor oa 2503789 ~l AR ut n ed Collector Current,I, - mA Bh =6 Qo Collector. to Emitter Voltage, Vop -vV 120 Bg0d7ao Vop =5v Bw Von =v, ' e's) a) A f of - | | o NP wd o&, by HSE & 8 @ a | oO y rh 20 o & J) 9 02 0.4 06 0.6 7.0 Base-to- Emitter Voltage, Van /- v No.2093-2/425A1479/2SC3789 AFE - I . 1000 ? Vomt= I Ck= OV a a 2 a o 2 > 7 & he 3 56 oD 3 a ww 10 ~1.0 ~10 ~100 _ Collector Current ,I, - mA ft - Ic 28A14 Vop= 30V Gain~-Bandwidth Product ,fp ~- MHz -1.0 -10 3 5 (7 =100 Collector Current ,I - mA 2 Cob _- Yep tes 25,1479 a f= (MHz ' 40 So oe 7 a o Z 5 ol 9 3 ae a. a 2 OQ ae 1.0 oe] a 7 5 -1.0 2 3 5 7.10 2 3 5 7 400 2 Collector-to-Base Voltage,VVon - tre - Veg O tr, 2 2541479 oa. P= | MHz BS! A oo o 7 a? ] SS 3 3 Ge a Pa a a f 2 PJ et ~~ o 1.0 oY yO? oe : 5 -1.0 2 3 3.7 149 2 3 5 7 2100 2 Collector-to- Base Voltage, Ven - Reverse Transfer Capacitance, Gain-Bandwidth Product,f, - MHz Output Capacitance,c,, - pF hee - I DC Current Gain,hpp 10 1.0 10 100 Collector Current ,Ip ~ mA fr 3 T- lc 8 1.0 100 Collector Current,I, - mA Cob - Vos 2 [ 280a7ao f= 1MHz . 10 7 5 ae P| 3 <= p 2 1.0 7 10 570 2 3 5S 7 to 2 Collector-to- Base Voltage,Vop - V Cre - Yop 2 ecg 7B9 Iz f=1MHz2 oy 1 10 P. 7 ee l~~.| 3 I 2 P| Ph] ~~ 1.0 7 5 1o 2 3 5 Tm .2 3 STm ? Collectofto-Base Voltage ;Vop ~ V No. 2093-3/425A1479/2SC3789 Collector-to- Emitter Base-to-Emitter Saturation Voltage, Ven; sat) - Vv Vce(sat) - 1 Vv nu uw & Ip=10 1.0 eo wa Saturation Voltage, Vor(sat) - ew UA 3 57.490 203 5 Fig 2 9 5 Figg Collector Current ,I, - mA Vee(sat) - I = o SA le Ic/ Ip=10 ' 4 -1.0 -10 2 -100 Collector Current,Iq - mA Po - T 28A1479 No heat Sink Allowable Collector Dissipation, Ambient Temperature,Ta %& Collector -to-Emitter Saturation Voltage, Vpp(sat) - , Base-to--Emitter Vee(sat) - Ic = ew unin wow wa? Ic Ig=10 ae o WO uw Saturation Voltage, Von(sat) 7 57 1.0 357 #2 3 S710 2 Collector Current ,I, - mA Veae(sat) - I 3 789 In/Ip=1 ~ NM ray 1.0 10 ; 7 1400 Collector Current,Ip - mA A.S.0 25al4 2 a By 1 2 100 oo H 7 ae 2 5 hi 4 ; a 5B 2 fa 8 10 % ad a oO (For PNP, minus sien is omitted.} 10 700 . Collector-to Emitter Voltage, Voy - vy we ww ws third parties, Mi No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss, M Anyone purchasing any products described or contained herein for an above-mentioned use shall: @ Accept full responsibility and indemnify and cefend SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: - @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTO.,, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally, Mi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of No. 2093-4/4