IRFIZ44NPbF Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET(R) Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Full Pak eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heat sink using a single clip or by a single screw fixing. Base Part Number Package Type IRFIZ44NPbF TO-220 Full-Pak Absolute Maximum Ratings Symbol VDSS 55V RDS(on) 0.024 ID 31A G G Gate D Drain Standard Pack Form Quantity Tube 50 IRFIZ44NPbF Parameter Max. Continuous Drain Current, VGS @ 10V 31 Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation 22 160 45 Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw 0.3 20 1 Parameter S Source Orderable Part Number ID @ TC = 25C Thermal Resistance Symbol Junction-to-Case RJC Junction-to-Ambient RJA S TO-220 Full-Pak ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG D Units A W 210 25 4.5 5.0 -55 to + 175 W/C V mJ A mJ V/ns C 300 10 lbf*in (1.1N*m) Typ. --- --- Max. 3.3 65 Units C/W 2017-04-27 IRFIZ44NPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time LD Internal Drain Inductance LS Internal Source Inductance IGSS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance C Drain to Sink Capacitance Source-Drain Ratings and Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr ton Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions 55 --- --- V VGS = 0V, ID = 250A --- 0.055 --- V/C Reference to 25C, ID = 1mA --- --- 0.024 VGS = 10V, ID = 17A 2.0 --- 4.0 V VDS = VGS, ID = 250A 17 --- --- S VDS = 25V, ID = 25A --- --- 25 VDS = 55V, VGS = 0V A --- --- 250 VDS = 55V,VGS = 0V,TJ =150C --- --- 100 VGS = 20V nA --- --- -100 VGS = -20V --- --- 65 ID = 25A nC VDS = 44V --- --- 12 VGS = 10V , See Fig. 6 and 13 --- --- 27 --- 7.3 --- VDD = 28V --- 69 --- ID =25A ns --- 47 --- RG= 12 --- 60 --- RD= 1.1See Fig. 10 Between lead, --- 4.5 --- 6mm (0.25in.) nH from package --- 7.5 --- and center of die contact --- 1300 --- VGS = 0V --- 410 --- VDS = 25V pF = 1.0MHz, See Fig. 5 --- 150 --- --- 12 --- = 1.0MHz Min. Typ. --- --- Max. Units --- --- 160 --- --- 1.3 V Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C,IS = 17A,VGS = 0V --- 65 98 ns TJ = 25C ,IF = 25A --- 160 240 C di/dt = 100A/s 31 A Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) starting TJ = 25C, L = 470H, RG = 25, IAS = 25A (See fig. 12) ISD 25A, di/dt 320A/s, VDD V(BR)DSS, TJ 175C. Pulse width 300s; duty cycle 2%. t=60s, =60Hz Uses IRFZ44N data and test conditions. 2 2017-04-27 IRFIZ44NPbF 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I , Drain-to-Source Current (A) D I , Drain-to-Source Current (A) D 100 4.5V 10 20s PULSE WIDTH TC = 25C 1 0.1 1 10 A 100 4.5V 10 0.1 2.5 TJ = 175C 10 V DS = 25V 20s PULSE WIDTH 6 7 8 9 VGS , Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics 3 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25C 5 10 A 100 Fig. 2 Typical Output Characteristics 1000 1 1 VDS , Drain-to-Source Voltage (V) Fig. 1 Typical Output Characteristics 100 20s PULSE WIDTH TC = 175C 1 100 VDS , Drain-to-Source Voltage (V) 4 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP TOP 10 A I D = 41A 2.0 1.5 1.0 0.5 VGS = 10V 0.0 -60 -40 -20 0 20 40 60 A 80 100 120 140 160 180 TJ , Junction Temperature (C) Fig. 4 Normalized On-Resistance vs. Temperature 2017-04-27 IRFIZ44NPbF C, Capacitance (pF) 2000 Ciss 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = Cds + C gd V GS , Gate-to-Source Voltage (V) 2500 1500 Coss 1000 Crss 500 0 1 10 100 A I D = 25A V DS = 44V V DS = 28V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 30 40 50 60 70 A Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) ID , Drain Current (A) ISD , Reverse Drain Current (A) 20 Q G , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) 100 TJ = 175C TJ = 25C 10 VGS = 0V 1 0.5 1.0 1.5 2.0 2.5 VSD , Source-to-Drain Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage 4 10 A 3.0 100 10s 100s 10 1ms TC = 25C TJ = 175C Single Pulse 1 1 10ms A 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 2017-04-27 IRFIZ44NPbF 35 ID , Drain Current (A) 30 25 20 15 Fig 10a. Switching Time Test Circuit 10 5 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10b. Switching Time Waveforms Thermal Response (Z thJC) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.01 0.00001 0.02 0.01 PDM t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + T C 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2017-04-27 IRFIZ44NPbF 15V L VDS DRIVER D.U.T RG + V - DD IAS 20V tp A 0.01 Fig 12a. Unclamped Inductive Test Circuit E AS , Single Pulse Avalanche Energy (mJ) 500 TOP BOTTOM 400 300 200 100 0 VDD = 25V 25 V(BR)DSS tp ID 10A 18A 25A 50 75 100 125 150 A 175 Starting TJ , Junction Temperature (C) Fig 12c. Maximum Avalanche Energy vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Fig 13a. Gate Charge Waveform 6 Fig 13b. Gate Charge Test Circuit 2017-04-27 IRFIZ44NPbF Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs 7 2017-04-27 IRFIZ44NPbF TO-220 Full-Pak Package Outline (Dimensions are shown in millimeters (inches)) TO-220 Full-Pak Part Marking Information TO-220AB Full-Pak packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to website at http://www.irf.com/package/ 8 2017-04-27 IRFIZ44NPbF Qualification Information Industrial (per JEDEC JESD47F) Qualification Level TO-220 Full-Pak Moisture Sensitivity Level N/A Yes RoHS Compliant Applicable version of JEDEC standard at the time of product release. Revision History Date 04/27/2017 Comments Changed datasheet with Infineon logo - all pages. Corrected Package Outline on page 8. Added disclaimer on last page. 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