TECHNICAL DATA
P-CHANNEL J-FET
Qualified per MIL-PRF-19500/295
Devices Qualified Level
2N2608
2N2608UB
JAN
ABSOLUTE MAXIMUM RATINGS (TA = +250C unless otherwise noted)
Parameters / Test Conditions Symbol Value Units
Gate-Source Voltage VGSS 30 V
Power Dissipation (1) TA = +250C PD 300 mW
Operating Junction & Storage Temperature Range Top, Tstg -65 to +200 0C
(1) Derate linearly 1.71 mW/
0C for TA > +250C.
TO-18
(TO-206AA)
Surface Mount (UB
version)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = +250C unless otherwise noted)
PARAMETERS / TEST CONDITIONS Symbol Min. Max. Units
Gate-Source Breakdown Voltage
VDS = 0, IG = 1.0 µAdc
V(BR)GSS
30
Vdc
Gate Reverse Current
VDS = 0, VGS = 30 Vdc
VDS = 0, VGS = 15 Vdc
IGSS
10
7.5 ηAdc
Drain Current
VGS = 0, VDS = 5.0 Vdc
IDDSS
-1.0
-5.0
mAdc
Gate-Source Cutoff Voltage
VDS = 5.0 V, ID = 1.0 µAdc
VGS(off)
0.75
6.0
Vdc
Magnitude of Small-Signal, Common-Source Short-Circuit Forward
Transfer Admittance
VGS = 0, VDS = 5.0 Vdc, f = 1.0 kHz
Yfs2
1,000
4,500
µmho
Small-Signal, Common-Source Short-Circuit Input Capacitance
VGS = 0, VDS = 5.0 Vdc, f = 1.0 MHz Ciss
10 pF
Common-Source Spot Noise Figure
VGS = 0, VDS = 5.0 Vdc, f = 1.0 kHz
BW = 16%, RG = 1.0 megohms, egen = 1.82 mVdc, RL = 470 Ω
NF
3.0
dB
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
022802
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