BZX55B Series
Excel Semiconductor
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Zener diode
Features
High reliability
Applications
Voltage stabilization
Absolute Maximum Ratings
Tj=25
Parameter Test Conditions Type Symbol Value Unit
Power dissipation I=4mm TL25 P
V 500 mW
Z-current IZ PV/VZ mA
Junction temperature Tj 175
Storage temperature range Tstg -65~+175
Maximum Thermal Resistance
Tj=25
Parameter Test Conditions Symbol Value Unit
Junction ambient I=4mm TL=constant RthJA 350 K/W
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
Electrical Characteristics
Tj=25
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=200mA VF 1.5 V
BZX55B Series
Excel Semiconductor
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Type VZnom IZT for V
ZT and rzjT rzjK at I
ZK IR and IR at VR TKVZ
BZX55B V mA V mA µA µA1) V %/K
2V0 2.0 5 1.96~2.04 <100 <600 1 <150 <300 1 -0.09~-0.06
2V2 2.2 5 2.15~2.25 <100 <600 1 <150 <300 1 -0.09~-0.06
2V4 2.4 5 2.35~2.45 <85 <600 1 <50 <100 1 -0.09~-0.06
2V7 2.7 5 2.64~2.76 <85 <600 1 <10 <50 1 -0.09~-0.06
3V0 3.0 5 2.94~3.06 <85 <600 1 <4 <40 1 -0.08~-0.05
3V3 3.3 5 3.24~3.36 <85 <600 1 <2 <40 1 -0.08~-0.05
3V6 3.6 5 3.52~3.68 <85 <600 1 <2 <40 1 -0.08~-0.05
3V9 3.9 5 3.82~3.98 <85 <600 1 <2 <40 1 -0.08~-0.05
4V3 4.3 5 4.22~4.38 <75 <600 1 <1 <20 1 -0.06~-0.03
4V7 4.7 5 4.6~4.8 <60 <600 1 <0.5 <10 1 -0.05~+0.02
5V1 5.1 5 5.0~5.2 <35 <550 1 <0.1 <2 1 -0.02~+0.02
5V6 5.6 5 5.48~5.72 <25 <450 1 <0.1 <2 1 -0.05~+0.05
6V2 6.2 5 6.08~6.32 <10 <200 1 <0.1 <2 2 0.03~0.06
6V8 6.8 5 6.66~6.94 <8 <150 1 <0.1 <2 3 0.03~0.07
7V5 7.5 5 7.35~7.65 <7 <50 1 <0.1 <2 5 0.03~0.07
8V2 8.2 5 8.04~8.36 <7 <50 1 <0.1 <2 6.2 0.03~0.08
9V1 9.1 5 8.92~9.28 <10 <50 1 <0.1 <2 6.8 0.03~0.09
10 10 5 9.8~10.2 <15 <70 1 <0.1 <2 7.5 0.03~0.1
11 11 5 10.78~11.22 <20 <70 1 <0.1 <2 8.2 0.03~0.11
12 12 5 11.76~12.24 <20 <90 1 <0.1 <2 9.1 0.03~0.11
13 13 5 12.74~13.26 <26 <110 1 <0.1 <2 10 0.03~0.11
15 15 5 14.7~15.3 <30 <110 1 <0.1 <2 11 0.03~0.11
16 16 5 15.7~16.3 <40 <170 1 <0.1 <2 12 0.03~0.11
18 18 5 17.64~18.36 <50 <170 1 <0.1 <2 13 0.03~0.11
20 20 5 19.6~20.4 <55 <220 1 <0.1 <2 15 0.03~0.11
22 22 5 21.55~22.45 <55 <220 1 <0.1 <2 16 0.04~0.12
24 24 5 23.5~24.5 <80 <220 1 <0.1 <2 18 0.04~0.12
27 27 5 26.4~27.6 <80 <220 1 <0.1 <2 20 0.04~0.12
30 30 5 29.4~30.6 <80 <220 1 <0.1 <2 22 0.04~0.12
33 33 5 32.4~33.6 <80 <220 1 <0.1 <2 24 0.04~0.12
36 36 5 35.3~36.7 <80 <220 1 <0.1 <2 27 0.04~0.12
39 39 2.5 38.2~39.8 <90 <500 0.5 <0.1 <5 30 0.04~0.12
43 43 2.5 42.1~43.9 <90 <600 0.5 <0.1 <5 33 0.04~0.12
47 47 2.5 46.1~47.9 <110 <700 0.5 <0.1 <5 36 0.04~0.12
51 51 2.5 50~52 <125 <700 0.5 <0.1 <10 39 0.04~0.12
56 56 2.5 54.9~57.1 <135 <1000 0.5 <0.1 <10 43 0.04~0.12
62 62 2.5 60.8~63.2 <150 <1000 0.5 <0.1 <10 47 0.04~0.12
68 68 2.5 66.6~69.4 <200 <1000 0.5 <0.1 <10 51 0.04~0.12
75 75 2.5 73.5~76.5 <250 <1500 0.5 <0.1 <10 56 0.04~0.12
1) at Tj=150
BZX55B Series
Excel Semiconductor
www.excel-semi.com Rev. 3f, 1-Jun-2008
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Characteristics (Tj=25 unless otherwise specified)
Figure 1. Thermal Resistance vs. Lead length Figure 4. Typical Change of Working Voltage Vs.
Junction Temperature
Figure 2. Total Power Dissipation vs. Ambient
Temperature
Figure 5. Temperature Coefficient of Vz vs. Z-Voltage
Figure 3. Typical Change of Working Voltage under
Operating Conditions at Tamb=25
Figure 6. Diode Capacitance vs. Z-voltage
BZX55B Series
Excel Semiconductor
www.excel-semi.com Rev. 3f, 1-Jun-2008
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Figure 7. Forward Current vs. Forward Voltage Figure 9. Z-Current vs. Z-Voltage
Figure 8. Z-Current vs. Z-Voltage Figure 10. Differential Z-Resistance Vz vs. Z-Voltage
Figure 11. Thermal Response
BZX55B Series
Excel Semiconductor
www.excel-semi.com Rev. 3f, 1-Jun-2008
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Dimensions in mm
Standard Glass Case
JEDEC DO-35
Marking
Z
5
V
B
5
5
X
B
1
Cathode Anode
26 min. 26 min. 4.2 max.
Φ0.55 max.
Φ2.0 max.
Cathode identification Type No.
B
5
Z
5
X
B